All-inorganic tin-doped Cs2BiAgCl6 double perovskite with stable blue photoluminescence for WLEDs

Author(s):  
Dayu Huang ◽  
Hui Xiao ◽  
Dongjie Liu ◽  
Qiuyun Ouyang ◽  
Youchao Kong ◽  
...  

Lead free double perovskites have recently received increasing attention due to variable band gap. Herein, tin has been doped into Cs2BiAgCl6 successfully. The doping of Sn2+ cations can make the...

Author(s):  
Bing-Hao Wang ◽  
Bin Gao ◽  
Jin-Rong Zhang ◽  
Lang Chen ◽  
Guo Jun-Kang ◽  
...  

In recent years, two-dimensional (2D) lead-free double perovskites have been attracting much attention because of their unique performance for photovoltaic solar cells andphotocatalysis. Nonetheless, how the thickness affects the photoelectric...


2018 ◽  
Vol 140 (49) ◽  
pp. 17001-17006 ◽  
Author(s):  
Bin Yang ◽  
Xin Mao ◽  
Feng Hong ◽  
Weiwei Meng ◽  
Yuxuan Tang ◽  
...  

2019 ◽  
Vol 31 (44) ◽  
pp. 445902 ◽  
Author(s):  
Shruthi Nair ◽  
Mrinalini Deshpande ◽  
Vaishali Shah ◽  
Subhash Ghaisas ◽  
Sandesh Jadkar

Nanoscale ◽  
2019 ◽  
Vol 11 (23) ◽  
pp. 11173-11182 ◽  
Author(s):  
Hung Q. Pham ◽  
Russell J. Holmes ◽  
Eray S. Aydil ◽  
Laura Gagliardi

Two indium-based double perovskites, Cs2InCuCl6 and (CH3NH3)2InCuCl6, were proposed as promising materials for photovoltaic and optoelectronic applications with a suitable band gap and exceptional optical and electrical properties.


2019 ◽  
Vol 7 (31) ◽  
pp. 9686-9689 ◽  
Author(s):  
Matthew B. Gray ◽  
Eric T. McClure ◽  
Patrick M. Woodward

The halide double perovskite solid solution Cs2AgBiBr6−xClx has been investigated and found to exhibit a band gap that increases from 2.2 eV to 2.8 eV as the Cl− content increases, with an upward deviation from Vegard's law when x > 5.


RSC Advances ◽  
2020 ◽  
Vol 10 (30) ◽  
pp. 17444-17451 ◽  
Author(s):  
Yasir Saeed ◽  
Bin Amin ◽  
Haleema Khalil ◽  
Fida Rehman ◽  
Hazrat Ali ◽  
...  

In this work, we have studied new double perovskite materials, A21+B2+B3+X61−, where A21+ = Cs, B2+ = Li, Na, B3+ = Al, Ga, In, and X61−.


RSC Advances ◽  
2020 ◽  
Vol 10 (34) ◽  
pp. 20196-20196
Author(s):  
Yasir Saeed ◽  
Bin Amin ◽  
Haleema Khalil ◽  
Fida Rehman ◽  
Hazrat Ali ◽  
...  

Correction for ‘Cs2NaGaBr6: a new lead-free and direct band gap halide double perovskite’ by Yasir Saeed et al., RSC Adv., 2020, 10, 17444–17451, DOI: 10.1039/D0RA01764G.


2020 ◽  
Vol 6 (45) ◽  
pp. eabb5381
Author(s):  
Weihua Ning ◽  
Jinke Bao ◽  
Yuttapoom Puttisong ◽  
Fabrizo Moro ◽  
Libor Kobera ◽  
...  

Spintronics holds great potential for next-generation high-speed and low–power consumption information technology. Recently, lead halide perovskites (LHPs), which have gained great success in optoelectronics, also show interesting magnetic properties. However, the spin-related properties in LHPs originate from the spin-orbit coupling of Pb, limiting further development of these materials in spintronics. Here, we demonstrate a new generation of halide perovskites, by alloying magnetic elements into optoelectronic double perovskites, which provide rich chemical and structural diversities to host different magnetic elements. In our iron-alloyed double perovskite, Cs2Ag(Bi:Fe)Br6, Fe3+ replaces Bi3+ and forms FeBr6 clusters that homogenously distribute throughout the double perovskite crystals. We observe a strong temperature-dependent magnetic response at temperatures below 30 K, which is tentatively attributed to a weak ferromagnetic or antiferromagnetic response from localized regions. We anticipate that this work will stimulate future efforts in exploring this simple yet efficient approach to develop new spintronic materials based on lead-free double perovskites.


2020 ◽  
Vol 132 (35) ◽  
pp. 15303-15306 ◽  
Author(s):  
Fuxiang Ji ◽  
Johan Klarbring ◽  
Feng Wang ◽  
Weihua Ning ◽  
Linqin Wang ◽  
...  
Keyword(s):  
Band Gap ◽  

2017 ◽  
Vol 5 (29) ◽  
pp. 15031-15037 ◽  
Author(s):  
Jun Zhou ◽  
Zhiguo Xia ◽  
Maxim S. Molokeev ◽  
Xiuwen Zhang ◽  
Dongsheng Peng ◽  
...  

Stable double perovskite Cs2AgInCl6 has been reported as a direct gap semiconductor with a wide band gap of 3.23 eV obtained experimentally and 3.33 eV obtained by DFT calculation.


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