Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2 thin films scaled down to 3 nm

2021 ◽  
Author(s):  
Chin I Wang ◽  
Hsin-Yang Chen ◽  
Chun-Yuan Wang ◽  
Teng-Jan Chang ◽  
Yu-Sen Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zirconium Oxide ◽  
Remnant Polarization ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

The thickness scaling of the ferroelectric (FE) hafnium zirconium oxide (HZO) down to sub-10 nm is essential in non-volatile memory devices. In this study, high remnant polarization (Pr), low thermal...

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

YMnO3 Thin Films Prepared from Solutions for Non Volatile Memory Devices

1997 ◽  
Vol 36 (Part 2, No. 12A) ◽  
pp. L1601-L1603 ◽  
Author(s):  
Norifumi Fujimura ◽  
Hirofumi Tanaka ◽  
Hiroya Kitahata ◽  
Kiyoharu Tadanaga ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

Novel Rewritable, Non-volatile Memory Devices Based on Thermally and Dimensionally Stable Polyimide Thin Films

2008 ◽  
Vol 18 (20) ◽  
pp. 3276-3282 ◽  
Author(s):  
Suk Gyu Hahm ◽  
Seungchel Choi ◽  
Sang-Hyun Hong ◽  
Taek Joon Lee ◽  
Samdae Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

2015 ◽  
Vol 3 (10) ◽  
pp. 2366-2370 ◽  
Author(s):  
Ji Hoon Park ◽  
Narendra Kurra ◽  
M. N. AlMadhoun ◽  
Ihab N. Odeh ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Polymer Thin Films ◽  
Annealing Process ◽  
Memory Devices ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.

Defects in ferroelectric HfO2

Nanoscale ◽  
2021 ◽  
Author(s):  
Anastasia Chouprik ◽  
Dmitry V. Negrov ◽  
Evgeny Tsymbal ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Memory Devices ◽  
Polycrystalline Thin Films ◽  
Non Volatile Memory ◽  
Volatile Memory

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the expectations of developing competitive ferroelectric non-volatile memory devices. To date, it is widely accepted that the...

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition for non-volatile memory applications

2000 ◽  
Vol 375 (1-2) ◽  
pp. 200-204 ◽  
Author(s):  
Xinhua Zhu ◽  
Yiming Liu ◽  
Zhenghua An ◽  
Tao Zhu ◽  
Zhuangchun Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Fluorenone/carbazole based bipolar small molecules for non-volatile memory devices

2020 ◽  
Vol 78 ◽  
pp. 105584 ◽  
Author(s):  
Jia-Qin Yang ◽  
Li-Yu Ting ◽  
Ruopeng Wang ◽  
Jing-Yu Mao ◽  
Yi Ren ◽  
...  
Keyword(s):  
Small Molecules ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory
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