Isothermal crystallization and time-temperature-transformation diagram of the organic semiconductor 5,11-bis(triethylsilylethynyl)anthradithiophene

2021 ◽  
Author(s):  
Liyang Yu ◽  
Andrew M. Zeidell ◽  
John E. Anthony ◽  
Oana D. Jurchescu ◽  
Christian Müller
Keyword(s):  
Electronic Properties ◽  
Thermal Annealing ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Isothermal Crystallization ◽  
Annealing Temperature ◽  
Trial And Error ◽  
Optimal Annealing Temperature ◽  
Temperature Transformation ◽  
Selection Of

Thermal annealing of organic semiconductors is critical for optimization of their electronic properties. The selection of the optimal annealing temperature –often done on a trial-and-error basis– is essential for achieving...

Thermal Annealing Effect on the Thermal and Electrical Properties of Organic Semiconductor Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1637-1643 ◽  
Author(s):  
Xinyu Wang ◽  
Boyu Peng ◽  
Paddy Chan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Annealing Temperature ◽  
Waste Heat ◽  
Annealing Effect ◽  
Field Effect Mobility ◽  
Thermal And Electrical Properties

ABSTRACTThe thermal and electrical properties of organic semiconductor are playing critical roles in the device applications especially on the devices with large area. Although the effect may be minor in a single device like field effect transistors, the unwanted waste heat would cause much more severe problems in large-scale devices as the power density will go up significantly. The waste heat would lead to performance degradation or even failure of the devices, and thus a more detailed study on the thermal conductivity and carrier mobility of the organic thin film would be beneficial to predict the limits of the device or design a thermally stable device. Here we explore the thermal annealing effect on the thermal and electrical properties of the small molecule organic semiconductor, dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). After the post deposition thermal annealing, the grain size of the film increases and in-plane crystallinity improves while cross-plane crystallinity keeps relatively constant. We demonstrated the cross-plane thermal conductivity is independent of the thermal annealing temperature and high annealing temperature will reduce the space-charge-limited current (SCLC) mobility. When the annealing temperature increase from 24 °C to 140 °C, the field effect mobility shows a gradual increase while the threshold voltage shifts from positive to negative. The different dependence of the SCLC mobility and field effect mobility on the annealing temperature suggest the improvement of the film crystallinity after thermal annealing is not the only dominating effect. Our investigation provides the constructive information to tune the thermal and electrical properties of organic semiconductors.

Reduction of the Optical Absorption of Zinc Germanium Phosphide Via Post-Growth Thermal Anneal

1999 ◽  
Vol 607 ◽  
Author(s):  
How-Ghee Ang ◽  
Leng-Leng Chng ◽  
Yiew-Wang Lee ◽  
Colin J. Flynn ◽  
Phil C. Smith ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Thermal Annealing ◽  
Annealing Time ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Near Band Edge ◽  
Percentage Decrease ◽  
Optimal Annealing Temperature ◽  
Zinc Germanium Phosphide

AbstractThis paper describes the reduction of the near-band-edge absorption of zinc germanium phosphide (ZGP) through thermal annealing. The effects of the annealing time, temperature and vapour atmosphere on the reduction of the optical absorption in the near infrared (NIR) region are reported. Results have shown that the optical absorption at 2µm is reduced by at least 50% upon thermal anneal of ZGP. The optimal annealing temperature was 600'C and the optimal annealing time ranged from 200 - 400 h. Annealing in vacuum yielded a larger reduction in the 2-µm optical absorption compared to annealing in the presence of additional zinc and phosphorus vapours. Re-annealing ZGP further reduced the absorption coefficient at 2-µm. However, the percentage decrease in the 2-µm absorption coefficient was much smaller compared to the first thermal anneal.

scholarly journals What is Special about Silicon in Functionalised Organic Semiconductors?

2021 ◽  
Author(s):  
Karl J Thorley ◽  
Micai Benford ◽  
Yang Song ◽  
Sean R. Parkin ◽  
Chad Risko ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
High Performance ◽  
Side Chain ◽  
Carbon Side Chain ◽  
Atomic Substitution

A carbon side-chain analogue to the high-performance organic semiconductor triethylsilylethynyl difluoroanthradithiophene has been synthesised and characterized. Atomic substitution of carbon for silicon results in subtle changes to opto-electronic properties, which...

Attaining air stability in high performing n-type phthalocyanine based organic semiconductors

2021 ◽  
Author(s):  
Nathan J Yutronkie ◽  
Benjamin King ◽  
Owen Alfred Melville ◽  
Benoit Hugo Lessard ◽  
Jaclyn L Brusso
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Strong Electron ◽  
Electron Conduction ◽  
High Performing ◽  
Silicon Phthalocyanine

The perfluorinated analogue of silicon phthalocyanine (F2-F16SiPc) has been synthesized as a novel air-stable n-type organic semiconductor. The design of F2-F16SiPc facilitates strong electron conduction through peripheral fluorination that deepens...

Nickel Oxide Coated on Pretreated MWCNTs as an Electrode for Supercapacitor

2013 ◽  
Vol 829 ◽  
pp. 654-658
Author(s):  
Lida Mahmoudi ◽  
Farzad Mahboubi ◽  
Moreteza Saghafi Yazdi
Keyword(s):  
Nickel Oxide ◽  
Thermal Annealing ◽  
Nickel Hydroxide ◽  
Annealing Temperature ◽  
Electrochemical Characteristics ◽  
Sem Images ◽  
Electroactive Materials ◽  
Nanotubular Structure ◽  
Individual Cnts ◽  
The Individual

Nickel oxide/carbon nanotubes (NiO/CNTs) composite materials for supercapacitor are prepared by chemically depositing of nickel hydroxide onto CNTs pretreated by ultrasonication and followed by thermal annealing at 200-300°C. A series of NiO/CNTs composites with different weight ratios of CNTs and different annealing temperature are synthesized via the same route. The scanning electron microscope (SEM) images show that the nucleation of the nickel hydroxide formed on the outer walls of CNTs due to ultrasonic cavitations, and then nickel oxide coated uniformly on the outer surface of the individual CNTs after thermal annealing. The NiO/CNTs electrode presents a maximum specific capacitance of 254 F/g as well as a good cycle life in 2 M KOH electrolyte. The good electrochemical characteristics of NiO/CNTs composite can be attributed to the three-dimensionally interconnected nanotubular structure with a thin film of electroactive materials.

scholarly journals Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams

2013 ◽  
Vol 103 (20) ◽  
pp. 203114 ◽  
Author(s):  
Servin Rathi ◽  
Jin-Hyung Park ◽  
In-yeal Lee ◽  
Min Jin Kim ◽  
Jeong Min Baik ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Joule Heating ◽  
Annealing Temperature ◽  
Insulator Metal Transition

Investigation of the influence of the mode of heat treatment of the initial powder on the efficiency of sintering zirconium ceramics by dilatometry

2021 ◽  
Vol 103 (3) ◽  
pp. 17-24
Author(s):  
S. Shevelev ◽  
◽  
E. Sheveleva ◽  
O. Stary ◽  
Keyword(s):  
Thermal Annealing ◽  
Zirconium Dioxide ◽  
Annealing Temperature ◽  
Average Particle Size ◽  
Average Particle ◽  
Sintered Ceramic ◽  
Tetragonal Modification ◽  
Thermal Sintering ◽  
Powder Compacts ◽  
High Degree

Using methods of synchronous thermal and X-ray structural analyzes applied to zirconium dioxide powders partially stabilized with yttrium obtained by chemical coprecipitation the processes of dehydration of these powders during annealing in air have been investigated. Using the dilatometry method, the regularities of compaction of powder compacts have been investigated with thermal sintering. It was found that the resulting powders mainly consist of the tetragonal modification zirconium dioxide and are nano-sized. The average particle size was 25 nm. The resulting powders are characterized by a high degree of agglomeration. It is shown that an increase in the thermal annealing temperature from 500 to 700ºС leads to partial baking of individual particles inside the agglomerate, and causes the formation of hard agglomerates, the presence of which complicates the processes of compaction and subsequent sintering. The presence of such agglomerates prevents the production of ceramics with high mechanical characteristics: density and porosity. Thermal annealing temperature increase leads to a decrease in the density of the sintered ceramic and a decrease in its hardness.

Growth direction dependent separate-channel charge transport in organic weak charge-transfer co-crystal of anthracene-DTTCNQ

2022 ◽  
Author(s):  
Hui Jiang ◽  
Jun Ye ◽  
Peng Hu ◽  
Shengli Zhu ◽  
Yanqin Liang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Charge Transport ◽  
Electronic Properties ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Crystal Engineering ◽  
Molecular Crystal ◽  
Growth Direction ◽  
Weak Charge ◽  
Separate Channel

Co-crystallization is an efficient way of molecular crystal engineering to tune the electronic properties of organic semiconductors. In this work, we synthesized anthracene-4,8-bis(dicyanomethylene)4,8-dihydrobenzo[1,2-b:4,5-b’]-dithiophene (DTTCNQ) single crystals as a template to...

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