KF-Doped SnO2 as an electron transport layer for efficient inorganic CsPbI2Br perovskite solar cells with enhanced open-circuit voltages

Author(s):  
Senya Zhang ◽  
Hao Gu ◽  
Shan-Ci Chen ◽  
Qingdong Zheng

KF was first introduced into the SnO2 ETL for all-inorganic CsPbI2Br PVSCs with enhanced performance by regulating the work function and passivating defects of the perovskite.

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 32 ◽  
Author(s):  
Seungtae Baek ◽  
Jeong Woo Han ◽  
Devthade Vidyasagar ◽  
Hanbyeol Cho ◽  
Hwi-Heon HA ◽  
...  

We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.


2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Man Yue ◽  
Jie Su ◽  
Peng Zhao ◽  
Zhenhua Lin ◽  
Jincheng Zhang ◽  
...  

Abstract Interface engineering has been regarded as an effective and noninvasive means to optimize the performance of perovskite solar cells (PSCs). Here, doping engineering of a ZnO electron transport layer (ETL) and CsPbI3/ZnO interface engineering via introduction of an interfacial layer are employed to improve the performances of CsPbI3-based PSCs. The results show that when introducing a TiO2 buffer layer while increasing the ZnO layer doping concentration, the open-circuit voltage, power conversion efficiency, and fill factor of the CsPbI3-based PSCs can be improved to 1.31 V, 21.06%, and 74.07%, respectively, which are superior to those of PSCs only modified by the TiO2 buffer layer or high-concentration doping of ZnO layer. On the one hand, the buffer layer relieves the band bending and structural disorder of CsPbI3. On the other hand, the increased doping concentration of the ZnO layer improves the conductivity of the TiO2/ZnO bilayer ETL because of the strong interaction between the TiO2 and ZnO layers. However, such phenomena are not observed for those of a PCBM/ZnO bilayer ETL because of the weak interlayer interaction of the PCBM/ZnO interface. These results provide a comprehensive understanding of the CsPbI3/ZnO interface and suggest a guideline to design high-performance PSCs.


2021 ◽  
Author(s):  
Song Fang ◽  
Bo Chen ◽  
Bangkai Gu ◽  
Linxing Meng ◽  
Hao Lu ◽  
...  

UV induced decomposition of perovskite material is one of main factors to severely destroy perovskite solar cells for instability. Here we report a UV stable perovskite solar cell with a...


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