Side chain engineering control of mixed conduction in oligoethylene glycol-substituted polythiophenes

2021 ◽  
Vol 9 (37) ◽  
pp. 21410-21423 ◽  
Author(s):  
Jonathan W. Onorato ◽  
Zhongyang Wang ◽  
Yangyang Sun ◽  
Christian Nowak ◽  
Lucas Q. Flagg ◽  
...  

This work reveals the structure and sequence effects on ion and electron conductivity. Increased oxygen content leads to increased ionic and reduced electronic conductivity, and increased backbone distance increases both conductivities.

Langmuir ◽  
2019 ◽  
Vol 35 (24) ◽  
pp. 7929-7936 ◽  
Author(s):  
Kishore Raghupathi ◽  
Vikash Kumar ◽  
Uma Sridhar ◽  
Alexander E. Ribbe ◽  
Huan He ◽  
...  

2020 ◽  
Vol 12 (11) ◽  
pp. 13029-13039 ◽  
Author(s):  
Philip Schmode ◽  
Achilleas Savva ◽  
Robert Kahl ◽  
David Ohayon ◽  
Florian Meichsner ◽  
...  

1991 ◽  
Vol 46 (5) ◽  
pp. 409-415 ◽  
Author(s):  
Werner Weppner ◽  
Jun Liu

AbstractThe partial electronic conductivity of Ag+-ß"-alumina was determined in the temperature range 180-200 °C, using Wagner's asymmetric galvanic polarization cell Ag| Ag+-ß"-alumina | Pt. The electron conductivity is 4.5 x 10-8 Ω-1cm-1, while the hole conductivity is about seven orders of magnitude lower at the silver activity aAg =1at 200 °C. These results are compared with earlier data on ß/ß"-alumina. The conduction mechanism and the effect of the electronic conductivity on the application of Ag+-ß"-alumina are discussed


Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 641
Author(s):  
Alejandro Natoli ◽  
Blanca I. Arias-Serrano ◽  
Enrique Rodríguez-Castellón ◽  
Agnieszka Żurawska ◽  
Jorge R. Frade ◽  
...  

Manganese-substituted 5 mol.% yttria-stabilized zirconia (5YSZ) was explored as a prospective material for protective interlayers between electrolyte and oxygen electrodes in reversible solid oxide fuel/electrolysis cells. [(ZrO2)0.95(Y2O3)0.05]1−x[MnOy]x (x = 0.05, 0.10 and 0.15) ceramics with cubic fluorite structure were sintered in air at 1600 °C. The characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM)/energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), thermogravimetry and dilatometry in controlled atmospheres, electrical conductivity measurements, and determination of oxygen-ion transference numbers by the electromotive force (EMF) technique. Mn-substituted 5YSZ solid solutions exhibit variable oxygen nonstoichiometry with manganese cations in a mixed 2+/3+ oxidation state under oxidizing conditions. Substitution by manganese gradually increases the extent of oxygen content variation on thermal/redox cycling, chemical contribution to thermal expansion and dimensional changes on reduction. It also deteriorates oxygen-ionic conductivity and improves p-type electronic conductivity under oxidizing conditions, leading to a gradual transformation from predominantly ionic to prevailing electronic transport with increasing x. Mn2+/3+→Mn2+ transformation under reducing atmospheres is accompanied by the suppression of electronic transport and an increase in ionic conductivity. All Mn-substituted 5YSZ ceramics are solid electrolytes under reducing conditions. Prolonged treatments in reducing atmospheres, however, promote microstructural changes at the surface of bulk ceramics and Mn exsolution. Mn-substituted 5YSZ with 0.05 ≤ x < 0.10 is considered the most suitable for the interlayer application, due to the best combination of relevant factors, including oxygen content variations, levels of ionic/electronic conductivity and thermochemical expansion.


Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.


Author(s):  
Y. Feng ◽  
X. Y. Cai ◽  
R. J. Kelley ◽  
D. C. Larbalestier

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.


Author(s):  
Y. P. Lin ◽  
A. H. O’Reilly ◽  
J. E. Greedan ◽  
M. Post

In the basal planes of the orthorhombic YBa2Cu3O7-X compound with x=0.07, which has a Tc of around 90K, chains of copper-oxygen are formed along the [010] direction. Previous investigations on the variation of Tc with oxygen content have shown the existence of a plateau at Tc = 60K for x=0.3 to 0.4, suggesting the presence of a separate phase. This phase has also been identified to be orthorhombic, but with a 2x superlattice along [100] of the parent structure, and the superlattice has been attributed to the formation of alternating copper-oxygen and copper-vacancy chains. In our work, we have studied the chain ordering phenomenon by electron microscopy and neutron diffraction on samples with different oxygen contents. We report here some of our electron microscopy findings for samples with x=0.4.Powder samples of YBa2Cu3O7-X were prepared by controlled re-oxidation of previously reduced material. For electron microscopy, the sample was dry ground using a mortar and pestle in a dry nitrogen atmosphere without the use of any solvent and transferred dry onto holey carbon film for examination in a Philips CM12 microscope.


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