Atomic layer deposition of photoelectrocatalytic material on 3D-printed nanocarbon structures

2021 ◽  
Author(s):  
Siowwoon Ng ◽  
Raul Zazpe ◽  
Jhonatan Rodriguez-Pereira ◽  
Jan Michalička ◽  
Jan M. Macak ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Layer Deposition ◽  
System P ◽  
Layer Manufacturing ◽  
Conversion System ◽  
3D Printed ◽  
Energy Conversion System ◽  
Manufacturing Techniques

Combining two advanced layer-by-layer manufacturing techniques, low-temperature atomic layer deposition of MoS2 on a customizable 3D-printed nanocarbon surface, for photoelectrochemical energy conversion system.

Layer-by-Layer Molecular Assemblies for Dye-Sensitized Photoelectrosynthesis Cells Prepared by Atomic Layer Deposition

2017 ◽  
Vol 139 (41) ◽  
pp. 14518-14525 ◽  
Author(s):  
Degao Wang ◽  
Matthew V. Sheridan ◽  
Bing Shan ◽  
Byron H. Farnum ◽  
Seth L. Marquard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Molecular Assemblies ◽  
Dye Sensitized ◽  
Layer Deposition

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Silicon Surfaces ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Layer Deposition

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.

scholarly journals Electrostatic Supercapacitors by Atomic Layer Deposition on Nanoporous Anodic Alumina Templates for Environmentally Sustainable Energy Storage

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 403 ◽  
Author(s):  
Luis Fernández-Menéndez ◽  
Ana González ◽  
Víctor Vega ◽  
Víctor de la Prida
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Anodic Alumina ◽  
Layer By Layer ◽  
Nanoporous Anodic Alumina ◽  
Low Leakage ◽  
Layer Deposition ◽  
Anodic Alumina Templates

In this work, the entire manufacturing process of electrostatic supercapacitors using the atomic layer deposition (ALD) technique combined with the employment of nanoporous anodic alumina templates as starting substrates is reported. The structure of a usual electrostatic capacitor, which comprises a top conductor electrode/the insulating dielectric layer/and bottom conductor electrode (C/D/C), has been reduced to nanoscale size by depositing layer by layer the required materials over patterned nanoporous anodic alumina membranes (NAAMs) by employing the ALD technique. A thin layer of aluminum-doped zinc oxide, with 3 nm in thickness, is used as both the top and bottom electrodes’ material. Two dielectric materials were tested; on the one hand, a triple-layer made by a successive combination of 3 nm each layers of silicon dioxide/titanium dioxide/silicon dioxide and on the other hand, a simple layer of alumina, both with 9 nm in total thickness. The electrical properties of these capacitors are studied, such as the impedance and capacitance dependences on the AC frequency regime (up to 10 MHz) or capacitance (180 nF/cm2) on the DC regime. High breakdown voltage values of 60 V along with low leakage currents (0.4 μA/cm2) are also measured from DC charge/discharge RC circuits to determine the main features of the capacitors behavior integrated in a real circuit.

scholarly journals Layer-by-layer photonic crystal fabricated by low-temperature atomic layer deposition

2007 ◽  
Vol 90 (15) ◽  
pp. 151101 ◽  
Author(s):  
Jae-Hwang Lee ◽  
Wai Leung ◽  
Jinho Ahn ◽  
Taeho Lee ◽  
In-Sung Park ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Layer Deposition

scholarly journals Produção de filmes de ZnO por ALD (atomic layer deposition)

2019 ◽  
Author(s):  
Thiago Francisco Clementino de Oliveira ◽  
Francisco das Chagas Marques
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Layer Deposition

Filmes finos de ZnO tem várias aplicações em dispositivos eletrônicos como em diodos, transistores, dispositivos piezoelétricos e células solares. Neste trabalho desenvolvemos este material pela técnica ALD (Atomic Layer Deposition) utilizando um equipamento recém adquirido pelo laboratório de pesquisas fotovoltaicas do IFGW. Esta técnica permite deposições camada-por-camada (layer-by-layer) dos filmes de maneira conformal (o filme se deposita assumindo a forma da superfície do substrato). Investigaremos o efeito da temperatura entre 100 ºC e 300 ºC.

scholarly journals Application of in situ and ex situ Characterization of Atomic Layer Deposition Processes for Gallium Phosphide and Sodium Fluoride

2021 ◽  
Author(s):  
Sara Rose Kuraitis
Keyword(s):  
Atomic Layer Deposition ◽  
Sodium Fluoride ◽  
Gallium Phosphide ◽  
Semiconductor Device ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Ex Situ ◽  
Layer By Layer ◽  
Layer Deposition ◽  
Vapor Deposition Technique

Atomic layer deposition (ALD) is a vapor deposition technique for synthesizing thin films with nanometer thickness control. ALD films are deposited on a substrate surface in a cyclic layer-by-layer fashion utilizing alternating doses of highly reactive chemical precursors. Precursors are selected to undergo self-limiting chemical reactions with the surface, and desired film thickness is achieved by varying the number of ALD cycles accordingly. Optimization of ALD process parameters and precursor chemistry enables conformal coating of arbitrary substrate geometries, including high aspect ratio features such as trenches. In the decades since its introduction, ALD has been used for applications across many industries, including semiconductor device manufacturing, emerging battery technologies, and optoelectronics. In this work, I present investigation of two previously reported chemistries for ALD of gallium phosphide (GaP), as well as improvements made to a custom ALD reactor to facilitate better process control and characterization. I also present a new process for thermal ALD of sodium fluoride (NaF), with potential applications in electrode coatings for sodium-ion batteries. To my knowledge, this is the first report of NaF ALD. Finally, I summarize obstacles which may be addressed in future studies that build upon this work.

Nucleation and Growth During Tungsten Atomic Layer Deposition on Oxide Surfaces

2001 ◽  
Vol 672 ◽  
Author(s):  
S. M. George ◽  
J.W. Elam ◽  
R.K. Grubbs ◽  
C.E. Nelson
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Oxide Surfaces ◽  
Layer By Layer ◽  
Growth Region ◽  
Tungsten Film ◽  
Layer Deposition ◽  
Initial Nucleation ◽  
Reaction Cycles

ABSTRACTNucleation and growth has been studied during tungsten (W) atomic layer deposition (ALD) on oxide surfaces. Auger electron spectroscopy (AES) was utilized to examine the deposition of W during the sequential (A) WF6 and (B) Si2H6 reaction cycles that define W ALD. The AES results displayed an initial nucleation period of ∼10 AB cycles to deposit one tungsten monolayer on SiO2. Subsequently, the W and Si AES signals grew and oscillated dramatically versus WF6 and Si2H6 exposures. The increase in the W AES signal in the growth region was consistent with a W ALD growth rate of 3.5 Å per AB cycle. An examination of the oxygen and tungsten AES signals versus AB cycles indicated that W ALD displayed nearly ideal “layer-by-layer”, Frank- van der Merwe growth after the nucleation period. On Al2O3, the AES results displayed a much shorter nucleation period for W ALD. Only 3 AB cycles were required to deposit one tungsten monolayer. Subsequently, the tungsten film grew at a rate of 3.6 Å per AB cycle. The initial nucleation period and growth mechanism during ALD are important because they will affect the roughness of the resulting ALD film.

scholarly journals AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12226-12231 ◽  
Author(s):  
Wei-Chung Kao ◽  
Wei-Hao Lee ◽  
Sheng-Han Yi ◽  
Tsung-Han Shen ◽  
Hsin-Chih Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Schematic Diagram ◽  
Layer Deposition ◽  
Processing Cycle

The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.

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