scholarly journals Critical Review on SnO2 for Transparent Conductor and Electron Transport Layer: Impact on Dopants and Functionalization of SnO2 on Photovoltaic and Energy Storage Devices

Author(s):  
Goutam Dalapati ◽  
Himani Sharma ◽  
Asim Guchhait ◽  
Priyanka Bamola ◽  
SIARHEI ZHUK ◽  
...  

Transparent conductors and charge transport layers play a key role in the design and fabrication of efficient renewable energy and electronic devices. Over the years, Indium tin oxide (ITO), is...

2020 ◽  
Vol 4 (11) ◽  
pp. 3290-3301
Author(s):  
Parthiban Pazhamalai ◽  
Karthikeyan Krishnamoorthy ◽  
Vimal Kumar Mariappan ◽  
Arunprasath Sathyaseelan ◽  
Sang-Jae Kim

Two-dimensional ReS2 nanostructures as an electrode for energy storage devices can be charged using solar cells which can efficiently power electronic devices for a long time, improving its effectiveness for the development of backup energy systems.


MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 305-310 ◽  
Author(s):  
R. Vasan ◽  
H. Salman ◽  
M. O. Manasreh

ABSTRACTAll inorganic quantum dot light emitting devices with solution processed transport layers are investigated. The device consists of an anode, a hole transport layer, a quantum dot emissive layer, an electron transport layer and a cathode. Indium tin oxide coated glass slides are used as substrates with the indium tin oxide acting as the transparent anode electrode. The transport layers are both inorganic, which are relatively insensitive to moisture and other environmental factors as compared to their organic counterparts. Nickel oxide acts as the hole transport layer, while zinc oxide nanocrystals act as the electron transport layer. The nickel oxide hole transport layer is formed by annealing a spin coated layer of nickel hydroxide sol-gel. On top of the hole transport layer, CdSe/ZnS quantum dots synthesized by hot injection method is spin coated. Finally, zinc oxide nanocrystals, dispersed in methanol, are spin coated over the quantum dot emissive layer as the electron transport layer. The material characterization of different layers is performed by using absorbance, Raman scattering, XRD, and photoluminescence measurements. The completed device performance is evaluated by measuring the IV characteristics, electroluminescence and quantum efficiency measurements. The device turn on is around 4V with a maximum current density of ∼200 mA/cm2 at 9 V.


2021 ◽  
Author(s):  
Cong Wang ◽  
Zehao Song ◽  
Pei Shi ◽  
Lin Lv ◽  
Houzhao Wan ◽  
...  

With the rapid development of portable electronic devices, electric vehicles and large-scale grid energy storage devices, it needs to reinforce specific energy and specific power of related electrochemical devices meeting...


2020 ◽  
Vol 11 ◽  
pp. 662-670
Author(s):  
Matangi Sricharan ◽  
Bikesh Gupta ◽  
Sreejesh Moolayadukkam ◽  
H S S Ramakrishna Matte

MoO3 is a versatile two-dimensional transition metal oxide having applications in areas such as energy storage devices, electronic devices and catalysis. To efficiently utilize the properties of MoO3 arising from its two-dimensional nature exfoliation is necessary. In this work, the exfoliation of MoO3 is carried out in 2-butanone for the first time. The achieved concentration of the dispersion is about 0.57 mg·mL−1 with a yield of 5.7%, which are the highest values reported to date. These high values of concentration and yield can be attributed to a favorable matching of energies involved in exfoliation and stabilization of MoO3 nanosheets in 2-butanone. Interestingly, the MoO3 dispersion in 2-butanone retains its intrinsic nature even after exposure to sunlight for 24 h. The composites of MoO3 nanosheets were used as an electrode material for supercapacitors and showed a high specific capacitance of 201 F·g−1 in a three-electrode configuration at a scan rate of 50 mV·s−1.


2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.


2021 ◽  
Vol 16 (6) ◽  
pp. 855-860
Author(s):  
Ji Yong Hwang ◽  
II Tae Kim ◽  
Hyung Wook Choi

To reduce the manufacturing cost of perovskite solar cells, soda-lime glass and transparent conducting oxides such as indium tin oxide and fluorine-doped tin oxide are the most widely used substrates and lighttransmitting electrodes. However, the transmittance spectra of soda-lime glass, indium tin oxide, and fluorinedoped tin oxide show that all light near and below 330 nm is absorbed; thus, with the use of these substrates, light energy near and below 330 nm cannot reach the perovskite light-absorbing layer. It is expected that the overall solar cell can be improved if the wavelength can be adjusted to reach the perovskite solar cell absorbing layer through down-conversion of energy in the optical wavelength band. In this study, a polyvinylidene fluoride transparent film mixed with a ZnGa2O4:Mn phosphor was applied to the incident side of the perovskite solar cell with the intent to increase the light conversion efficiency without changing the internal bandgap energy and structure. By adding a phosphor layer to the external surface of PSC exposed to incident light, the efficiency of the cell was increased by the down-conversion of ultraviolet light (290 nm) to the visible region (509 nm) while maintaining the transmittance. To manufacture the perovskite solar cell, a TiO2-based mesoporous electron transport layer was spin-coated onto the substrate. The perovskite layer used in this experiment was CH3NH3PbI3 and was fabricated on a TiO2 layer. Spiro-OMeTAD solution was spin-coated as a hole-transport layer.


2012 ◽  
Vol 629 ◽  
pp. 44-48
Author(s):  
Young Wook Hwang ◽  
Kwang Sik Kim ◽  
Tae Young Won

In this paper, we report our numerical study on the electrical-optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted in an effort to reduce the interface barrier between the cathode and the ETL(electron transport layer). In order to anlayze the electrical and optical characteristics such as the transport behavior of carriers, recombination kinetics, and emission property, we undertake the finite element method (FEM) in OLEDs. Our model includes Poisson’s equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation to account for recombination of carriers. We employ the multilayer structure that consists of indium tin oxide (ITO); 2, 2’, 7, 7’ –tetrakis (N, N-diphenylamine) - 9, 9’- spirobi-fluorene (S-TAD); 4, 4’- bis (2,2’- diphenylvinyl) - 1,1’- spirobiphenyl (S-DPVBi); tris (8-quinolinolato) aluminium (Alq3); calsium(Ca).


2018 ◽  
Vol 2 (10) ◽  
pp. 1750-1764 ◽  
Author(s):  
Guofeng Zhang ◽  
Yuyang Han ◽  
Changxiang Shao ◽  
Nan Chen ◽  
Guoqiang Sun ◽  
...  

Portable electronic devices and electric vehicles have greatly stimulated the development of micro-sized energy storage devices.


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