Overcoming Carrier Transport Limitation in Ruddlesden−Popper Perovskite Films by Lamellar Nickel Oxide Substrate

2021 ◽  
Author(s):  
Jianghu Liang ◽  
Zhanfei Zhang ◽  
Yiting Zheng ◽  
Xueyun Wu ◽  
Jianli Wang ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Carrier Transport ◽  
Solution Process ◽  
Two Dimensional ◽  
N Value ◽  
Oxide Substrate ◽  
Carrier Transportation

Two-dimensional (2D) Ruddlesden−Popper perovskites films fabricated by solution process are composed of multiple 2D perovskite phases, and carrier transportation is limited by the low-n-value 2D perovskite phases (n=1 and n=2)....

Hybrid two-dimensional nickel oxide-reduced graphene oxide nanosheets for supercapacitor electrodes

2021 ◽  
Vol 164 ◽  
pp. 105979
Author(s):  
Xin Gao ◽  
Hengwei Zhang ◽  
Erjun Guo ◽  
Fei Yao ◽  
Zengze Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Nickel Oxide ◽  
Reduced Graphene Oxide ◽  
Two Dimensional ◽  
Graphene Oxide Nanosheets ◽  
Reduced Graphene

scholarly journals MAPbI3 Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4385
Author(s):  
Ehsan Raza ◽  
Fakhra Aziz ◽  
Arti Mishra ◽  
Noora Jabor Al-Thani ◽  
Zubair Ahmad
Keyword(s):  
Carrier Transport ◽  
Solution Process ◽  
Electrical Characterization ◽  
Lead Iodide ◽  
Voltage Range ◽  
Conduction Mechanisms ◽  
Voltage Dependent ◽  
Conduction Behavior ◽  
Temperature Solution ◽  
Methylammonium Lead Iodide

The current work proposed the application of methylammonium lead iodide (MAPbI3) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI3(rods)-silver (Ag/MAPbI3/Ag) based photo-resistor was fabricated. The MAPbI3 microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI3 microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI3 microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current–voltage (I–V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond.

Efficient cationic agents for exfoliating two-dimensional nickel oxide sheets

2017 ◽  
Vol 137 (1) ◽  
Author(s):  
Jeremie Zaffran ◽  
Michael Nagli ◽  
Mahran Shehadeh ◽  
Maytal Caspary Toroker
Keyword(s):  
Nickel Oxide ◽  
Two Dimensional

scholarly journals Self-Supported Hydrous Iridium–Nickel Oxide Two-Dimensional Nanoframes for High Activity Oxygen Evolution Electrocatalysts

ACS Catalysis ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 10498-10520 ◽  
Author(s):  
Fernando Godínez-Salomón ◽  
Luis Albiter ◽  
Shaun M. Alia ◽  
Bryan S. Pivovar ◽  
Luis E. Camacho-Forero ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
High Activity ◽  
Oxygen Evolution ◽  
Two Dimensional

Hot Carrier Transport in SiGe/Si Two-Dimensional Hole Gases

1996 ◽  
pp. 449-452 ◽  
Author(s):  
G. Brunthaler ◽  
G. Bauer ◽  
G. Braithwaite ◽  
N. L. Mattey ◽  
P. Phillips ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Hot Carrier

scholarly journals Efficient Interlayer Exciton Transport in Two-Dimensional Metal-Halide Perovskites.

2020 ◽  
Author(s):  
Alvaro J Magdaleno ◽  
Michael Seitz ◽  
Michel Frising ◽  
Ana Herranz de la Cruz ◽  
Antonio I. Fernández-Domínguez ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Energy Transport ◽  
Diffusion Length ◽  
Charge Carrier Transport ◽  
Two Dimensional ◽  
Exciton Transport ◽  
Halide Perovskites ◽  
Excitonic Energy

We present transient microscopy measurements of interlayer energy transport in (PEA)<sub>2</sub>PbI<sub>4</sub> perovskite. We find efficient interlayer exciton transport (0.06 cm<sup>2</sup>/s), which translates into a diffusion length that exceeds 100 nm and a sub-ps timescale for energy transfer. While still slower than in-plane exciton transport (0.2 cm<sup>2</sup>/s), our results show that excitonic energy transport is considerably less anisotropic than charge-carrier transport for 2D perovskites.

scholarly journals Analysis of base characteristics of trench gate field termination IGBT

2021 ◽  
Vol 237 ◽  
pp. 02023
Author(s):  
Bo Wang
Keyword(s):  
Coordinate System ◽  
Experimental Verification ◽  
Carrier Transport ◽  
Model Analysis ◽  
Bipolar Transistor ◽  
Two Dimensional ◽  
Base Region ◽  
Dimensional Effect ◽  
Insulated Gate Bipolar Transistor ◽  
Gate Structure

Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.

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