Thermodynamic non-ideality in charge regulation of weak polyelectrolytes

Soft Matter ◽  
2021 ◽  
Author(s):  
Alejandro Gallegos ◽  
Gary Min Chiang Ong ◽  
Jianzhong Wu

Polymer ionization differs from that for monomeric counterparts due to intramolecular correlations. Such effects are conventionally described in terms of the site-binding model that accounts for the ionization energy and...

2020 ◽  
Author(s):  
Andra C. Dumitru ◽  
R. N. V. Krishna Deepak ◽  
Heng Liu ◽  
Melanie Koehler ◽  
Cheng Zhang ◽  
...  

AbstractA current challenge in the field of life sciences is to decipher, in their native environment, the functional activation of cell surface receptors upon binding of complex ligands. Lack of suitable nanoscopic methods has hampered our ability to meet this challenge in an experimental manner. Here, we use for the first time the interplay between atomic force microscopy, steered molecular dynamics and functional assays to elucidate the complex ligand-binding mechanism of C5a with the human G protein-coupled C5a receptor (C5aR). We have identified two independent binding sites acting in concert where the N-terminal C5aR serves as kinetic trap and the transmembrane domain as functional site. Our results corroborate the two-site binding model and clearly identify a cooperative effect between two binding sites within the C5aR. We anticipate that our methodology could be used for development and design of new therapeutic agents to negatively modulate C5aR activity.


2019 ◽  
Vol 52 (21) ◽  
pp. 8017-8031 ◽  
Author(s):  
Pablo M. Blanco ◽  
Sergio Madurga ◽  
Francesc Mas ◽  
Josep L. Garcés

2004 ◽  
Vol 108 (15) ◽  
pp. 4840-4849 ◽  
Author(s):  
Yoram Burak ◽  
Roland R. Netz

Author(s):  
Ahmed M. Dinar ◽  
A. S. Mohd Zain ◽  
F. Salehuddin

The ISFET sensing membrane is in direct contact with the electrolyte solution, determining the starting sensitivity of these devices. A SiO2 gate dielectric shows a low response sensitivity and poor stability. This paper proposes a comprehensive identification of different high-k materials which can be used for this purpose, rather than SiO2. The Gouy-Chapman and Gouy-Chapman-Stern models were combined with the Site-binding model, based on surface potential sensitivity, to achieve the work objectives. Five materials, namely Al2O3, Ta2O5, Hfo2, Zro2 and SN2O3, which are commonly considered for micro-electronic applications, were compared. This study has identified that Ta2O5 have a high surface potential response at around 59mV/pH, and also exhibits high stability in different electrolyte concentrations. The models used have been validated with real experimental data, which achieved excellent agreement. The insights gained from this study may be of assistance to determine the suitability of different materials before progressing to expensive real ISFET fabrication.


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