scholarly journals “Anti-electrostatic” halogen bonding in solution

2021 ◽  
Author(s):  
Cody Loy ◽  
Jana M Holthoff ◽  
Robert Weiss ◽  
Stefan Huber ◽  
Sergiy Rosokha
Keyword(s):  
Halogen Bonding ◽  
Spontaneous Formation ◽  
Halide Anions ◽  
First Time

Halogen-bonded (XB) complexes between halide anions and a cyclopropenylium-based anionic XB donor were characterized in solution for the first time. Spontaneous formation of such complexes confirms that halogen bonding is...

A Tridentate Halogen-Bonding Receptor for Tight Binding of Halide Anions

2010 ◽  
Vol 49 (9) ◽  
pp. 1674-1677 ◽  
Author(s):  
Mohammed G. Sarwar ◽  
Bojan Dragisic ◽  
Sandeep Sagoo ◽  
Mark S. Taylor
Keyword(s):  
Tight Binding ◽  
Halogen Bonding ◽  
Halide Anions

Spontaneous inversion of in-plane polarity ofa-oriented GaN domains laterally overgrown on patternedr-plane sapphire substrates

2013 ◽  
Vol 46 (2) ◽  
pp. 443-447 ◽  
Author(s):  
Donggyu Shin ◽  
Sanghwa Lee ◽  
Miyeon Jue ◽  
Wooyoung Lee ◽  
Soyoung Oh ◽  
...  
Keyword(s):  
Circular Hole ◽  
Sapphire Substrate ◽  
Domain Boundary ◽  
Crystallographic Analysis ◽  
Polarity Inversion ◽  
Spontaneous Formation ◽  
Sapphire Substrates ◽  
Inverted Orientation ◽  
Inversion Domain ◽  
First Time

Spontaneously regulated in-plane polarity inversion ofa-oriented GaN domains has been demonstrated for the first time. Crystallographic analysis revealed that each domain grown on circular-hole-patternedr-plane sapphire substrates has basal faces with oppositely oriented in-plane polarity. The inverted orientation of in-plane polarity on the opposite basal faces is not due to merging between in-plane polarity-inverted domains nucleated on the patternedr-plane sapphire substrate, but it was found to be due to spontaneous formation of an inversion domain boundary on the growth fronts of existing domains. This result provides new insights into controlling the in-plane polarity ofa-oriented GaN, because the nucleation of in-plane polarity-inverted domains ofa-oriented GaN onr-plane sapphire is symmetrically not allowed.

Halogen bonding in the structures of pentaiodobenzoic acid and its salts

CrystEngComm ◽  
2019 ◽  
Vol 21 (43) ◽  
pp. 6666-6670 ◽  
Author(s):  
Sergey A. Adonin ◽  
Mikhail A. Bondarenko ◽  
Alexander S. Novikov ◽  
Pavel A. Abramov ◽  
Maxim N. Sokolov ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Halogen Bonding ◽  
First Time

Structural characterization of pentaiodobenzoic acid (PIBA) and its salts was performed for the first time.

Halogen Bonding Interactions ofsym-Triiodotrifluorobenzene with Halide Anions: A Combined Structural and Theoretical Study

2008 ◽  
Vol 8 (7) ◽  
pp. 2241-2247 ◽  
Author(s):  
Sonia Triguero ◽  
Rosa Llusar ◽  
Victor Polo ◽  
Marc Fourmigué
Keyword(s):  
Theoretical Study ◽  
Halogen Bonding ◽  
Halide Anions

A Tridentate Halogen-Bonding Receptor for Tight Binding of Halide Anions

2010 ◽  
Vol 122 (9) ◽  
pp. 1718-1721 ◽  
Author(s):  
Mohammed G. Sarwar ◽  
Bojan Dragisic ◽  
Sandeep Sagoo ◽  
Mark S. Taylor
Keyword(s):  
Tight Binding ◽  
Halogen Bonding ◽  
Halide Anions

scholarly journals Intermolecular Interactions between Halogen‐Substituted p ‐Benzoquinones and Halide Anions: Anion‐π Complexes versus Halogen Bonding

ChemPlusChem ◽  
2020 ◽  
Vol 85 (3) ◽  
pp. 441-449 ◽  
Author(s):  
Almaz Jalilov ◽  
Spencer Deats ◽  
Muath Albukhari ◽  
Matthias Zeller ◽  
Sergiy V. Rosokha
Keyword(s):  
Intermolecular Interactions ◽  
Halogen Bonding ◽  
Halide Anions

From charge transfer to electron transfer in halogen-bonded complexes of electrophilic bromocarbons with halide anions

2015 ◽  
Vol 17 (7) ◽  
pp. 4989-4999 ◽  
Author(s):  
Sergiy V. Rosokha ◽  
Alfredo Traversa
Keyword(s):  
Electron Transfer ◽  
Charge Transfer ◽  
Halogen Bonding ◽  
Dramatic Decrease ◽  
Halide Anions ◽  
Inner Sphere ◽  
Bonded Complexes

Halogen bonding leads to a dramatic decrease of the barrier for (inner-sphere) electron transfer and halogen transfer between bromocarbons and iodide anions.

scholarly journals Anion-Exchange-Mediated Internal Electric Field: Boosting Photogenerated Carrier Separation and Utilization

2020 ◽  
Author(s):  
Yadong Li ◽  
Tong Han ◽  
Xing Cao ◽  
Kaian Sun ◽  
Qing Peng ◽  
...  
Keyword(s):  
Electric Field ◽  
Separation Efficiency ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Design And Optimization ◽  
Halide Anions ◽  
Valence Electrons ◽  
Simple Chemical ◽  
Carrier Separation ◽  
First Time

Abstract Constructing heterojunctions is a commonly used method for heterogeneous photocatalysts to modulate the internal electric field (IEF); however, this method suffers from narrow IEF distribution (primarily limited at the heterojunction interface) and long migration paths of photocarriers, and therefore results in suboptimal efficiencies in carrier separation and utilization. In this work, we report for the first time novel basic bismuth nitrate compound nanorods (denoted as BOH NRs) featuring surface-exposed open channels and a simple chemical composition; by simply modifying the bulk anion layers to overcome the limitations of heterojunctions, the bulk IEF could be readily modulated. A low exchange ratio (~10%) with halide anions (I–, Br–, Cl–) would give rise to a prominent elevation in carrier separation efficiency; for the reaction of photocatalytic oxidative coupling of benzylamine, the conversions over the modified catalysts are 1.6–2 times as high as that over pristine BOH. Benefiting from the unique crystal structure and the localization of valence electrons, the IEF intensity increases with the atomic number of introduced halide anions, leading to an enhanced efficiency of carrier separation and utilization. Our work here offers new insights into the design and optimization of semiconductor photocatalysts.

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