scholarly journals Bandgap recovery of monolayer MoS2 using defect engineering and chemical doping

RSC Advances ◽  
2021 ◽  
Vol 11 (34) ◽  
pp. 20893-20898
Author(s):  
Frederick Aryeetey ◽  
Sajedeh Pourianejad ◽  
Olubukola Ayanbajo ◽  
Kyle Nowlin ◽  
Tetyana Ignatova ◽  
...  
Keyword(s):  
Transition Metal ◽  
Chemical Doping ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Defect Engineering

Two-dimensional transition metal dichalcogenide materials have created avenues for exciting physics with unique electronic and photonic applications.

scholarly journals Fast response photogating in monolayer MoS2 phototransistors

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Vaquero ◽  
Vito Clericò ◽  
Juan Salvador-Sanchez ◽  
Elena Díaz ◽  
Francisco Dominguez-Adame ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fast Response ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Intensive Research

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by...

scholarly journals Visualization of Multifractal Superconductivity in a Two-Dimensional Transition Metal Dichalcogenide in the Weak-Disorder Regime

Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Weak Disorder

scholarly journals Retraction: Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12866-12866
Author(s):  
Bhaskar Kaviraj ◽  
Dhirendra Sahoo
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional

Retraction of ‘Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors’ by Bhaskar Kaviraj and Dhirendra Sahoo, RSC Adv., 2019, 9, 25439–25461, DOI: 10.1039/c9ra03769a.

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

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