scholarly journals Fabrication of ring oscillators using organic molecules of phenacene and perylenedicarboximide

RSC Advances ◽  
2021 ◽  
Vol 11 (13) ◽  
pp. 7538-7551 ◽  
Author(s):  
Niko Fioravanti ◽  
Luca Pierantoni ◽  
Davide Mencarelli ◽  
Claudio Turchetti ◽  
Shino Hamao ◽  
...  
Keyword(s):  
Organic Molecules ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Organic Fets

A ring oscillator consisting of p-channel and n-channel organic FETs.

High-Performance Low Voltage Organic Thin-Film Transistors

2005 ◽  
Vol 870 ◽  
Author(s):  
Stijn De Vusser ◽  
Soeren Steudel ◽  
Kris Myny ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Organic Thin Film Transistors ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Organic Thin Film ◽  
Supply Voltages

AbstractIn this work, we report on high-performance low voltage pentacene Organic Thin-Film Transistors (OTFT's) and circuits. Inverters and ring oscillators have been designed and fabricated. At 15 V supply voltage, we have observed invertors showing a voltage gain of 9 and an output swing of more than 13 V. As for the ring oscillators, oscillations started at supply voltages as low as 8.5 V. At a supply voltage of only 15 V, a stage delay time of 3.3 νs is calculated from experimental results.We believe that these results show for the first time a high speed ring oscillator at relatively low supply voltages. The required supply voltages can be obtained by rectification using an organic (pentacene) diode. These results may have an important impact on the realization of RF-ID tags: by integrating our circuits with an organic diode, the fabrication of organic RF-ID tags comes closer.

Device Ioff Mapping—Analysis of Ring Oscillator by Optical Beam Induced Resistance Change

2015 ◽  
Author(s):  
Greg M. Johnson ◽  
Ziyan Xu ◽  
Christopher D’Aleo
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
Photon Emission ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Rapid Improvement ◽  
Resistance Change ◽  
Emission Analysis ◽  
Multiple Defect ◽  
Line Technology

Abstract The ring oscillator is an important tool for inline monitoring during technology development, as it contains the most important front end of line technology features, is testable at first metal, and generally shows a good correlation to SRAM yield. This work explores various failure analysis techniques for the ring oscillator, during the development of 14 nm FinFET technology. OBIRCH, which is typically a DC technique, was operated with voltages as low as 0.15 V to find multiple defect mechanisms affecting the yield of ring oscillators, which operate at a frequencies in the GHz range. In contrast to typical photon emission analysis of ring oscillators, examines the devices which are flipping on, it is here proposed that the OBIRCH spots which are generated are indications of the Ioff, or the leakage of devices in the inverter stages across the ring. The results from this failure analysis approach enabled a rapid improvement in yield not only of the ring oscillator itself but of the SRAM.

High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000227-000232
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Ring Oscillators ◽  
Circuit Function ◽  
Soi Cmos

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

scholarly journals Consideration for Affects of an XOR in a Random Number Generator Using Ring Oscillators

Entropy ◽  
2021 ◽  
Vol 23 (9) ◽  
pp. 1168
Author(s):  
Ryoichi Sato ◽  
Yuta Kodera ◽  
Md. Arshad Ali ◽  
Takuya Kusaka ◽  
Yasuyuki Nogami ◽  
...  
Keyword(s):  
Random Number ◽  
Random Number Generator ◽  
Cloud Service ◽  
Ring Oscillator ◽  
State Transitions ◽  
Ring Oscillators ◽  
Number Generator ◽  
Xor Gate ◽  
True Random Number Generator ◽  
Oscillator Circuits

A cloud service to offer entropy has been paid much attention to. As one of the entropy sources, a physical random number generator is used as a true random number generator, relying on its irreproducibility. This paper focuses on a physical random number generator using a field-programmable gate array as an entropy source by employing ring oscillator circuits as a representative true random number generator. This paper investigates the effects of an XOR gate in the oscillation circuit by observing the output signal period. It aims to reveal the relationship between inputs and the output through the XOR gate in the target generator. The authors conduct two experiments to consider the relevance. It is confirmed that combining two ring oscillators with an XOR gate increases the complexity of the output cycle. In addition, verification using state transitions showed that the probability of the state transitions was evenly distributed by increasing the number of ring oscillator circuits.

High-performance combined ring oscillators

2020 ◽  
Vol 39 (3) ◽  
pp. 535-550
Author(s):  
Masoud Soltani ◽  
Farzan Khatib ◽  
Seyyed Javad Seyyed Mahdavi Chabok
Keyword(s):  
Power Supply ◽  
Delay Time ◽  
Supply Voltage ◽  
Theoretical Calculations ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Large Signal ◽  
Power Supply Voltage ◽  
Content Type

Purpose The purpose of this paper is to investigate a more robust ring oscillator. Less sensitivity to power supply variations is a target. This is important since low-quality ring oscillators could be exploited in numerous systems to reduce die costs. Design/methodology/approach The method in this work is large signal analysis. Delay time as the large signal parameter is calculated symbolically to explore dependency on a power supply voltage. Then simulations are performed to make a comparison. In this work, mathematical justifications are verified via HSPICE circuit simulator outputs, while 0.18 µm TSMC CMOS technology is exploited. Findings At least two combined configurations are presented with higher robustness. These circuits are more appropriate in noisy conditions. Both theoretical calculations and simulation results verify less sensitive oscillation against supply voltage ripples and temperature variations. Originality/value Introducing a band-switched inverter in combined configurations is contribution. In this way, three structures are presented which both show higher stability in oscillation frequency. The band switched delay time calculations are quite new and also the validity of the symbolical delay time approach is verified by circuit simulations.

scholarly journals Design of Low Delay Ring Oscillator Using CMOS

2018 ◽  
Vol 7 (3.6) ◽  
pp. 334
Author(s):  
S Shiyamala ◽  
T Kavitha
Keyword(s):  
Low Power ◽  
Delay Time ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Digital Clock ◽  
Low Delay ◽  
Complete Integration ◽  
Digital World ◽  
Delay Elements ◽  
Cmos Processes

In the Era of digital World, low power applications are the needs of the market to save the resources. Delay elements (e.g. digital clock) are essential parts of such digital applications. Ring oscillators have been used because of their ease of implementation, wide tuning ranges, operating at low voltages and existing possibility of complete integration in standard CMOS processes. It desires at identifying the best possible configuration for the hoop oscillators having the least strength intake and precise delay with lesser sensitivity to the variations inside the temperature and deliver voltage for frequencies of few KHz. while N = 7, for  0.18 µm generation , put off is 0.07ns simplest. Compare with N = 3, 14.2 % delay time reduced and 12.6 % lower when N= 7 taken into account. 

scholarly journals Performance Analysis of Ring Oscillators and Current-Starved VCO in 45-nm CMOS Technology

2022 ◽  
Vol 10 (1) ◽  
pp. 732-737
Author(s):  
Prakash Sharma
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Noise Power ◽  
Ring Oscillators ◽  
Voltage Controlled Oscillator

Abstract: This paper presents a relative study among two Ring oscillators architecture (CMOS, NMOS) and current-starved Voltage-controlled oscillator (CS-VCO) on the basis of different parameters like power dissipation ,phase noise etc. All the design has been done in 45- nm CMOS technology node and 2.3 GHz Centre frequency have been taken for the comparison because of their applications in AV Devices and Radio control. An inherent idea of the given performance parameters has been realize by thecomparative study. The comparative data shows that NMOS based Ring oscillator is good option in terms of the phase noise performance. In this study NMOS Ring Oscillator have attain a phase noise -97.94 dBc/Hz at 1 MHz offset frequency from 2.3 GHz center frequency. The related data also shows that CMOS Ring oscillator is the best option in terms of power consumption. In this work CMOS Ring oscillator evacuatea power of 1.73 mW which is quite low. Keywords: Voltage controlled oscillator (VCO), phase noise, power consumption, Complementary metal-oxide-semiconductor (CMOS), Current Starved Voltage-Controlled Oscillator (CS- VCO), Pull up network (PUN), Pull down network (PDN)

scholarly journals Ring oscillator physically unclonable function using sequential ring oscillator pairs for more challenge-response-pairs

2019 ◽  
Vol 13 (3) ◽  
pp. 892
Author(s):  
Julius Han Loong Teo ◽  
Noor Alia Nor Hashim ◽  
Azrul Ghazali ◽  
Fazrena Azlee Hamid
Keyword(s):  
Support Vector Machine ◽  
Oscillation Frequency ◽  
Ring Oscillator ◽  
Support Vector ◽  
Ring Oscillators ◽  
Random Oscillation ◽  
Selection Of

<span>The ring oscillator physically unclonable function (ROPUF) is one of the several types of PUF that has great potential to be used for security purposes. An alternative ROPUF design is proposed with two major differences. Firstly, the memristor is included in the ring oscillators as it is claimed to produce a more random oscillation frequency. Other reasons are its memory-like properties and variable memristance, relative compatibility with CMOS, and small size. Secondly, a different method of generating the response is implemented whereby a sequence of selection of ring oscillator pairs are used to generate a multiple bit response, rather than using only one ring oscillator pair to generate a single bit response. This method significantly expands the set of challenge-response pairs. The proposed memristor-based ROPUF shows 48.57%, 51.43%, and 51.43% for uniqueness, uniformity, and bit-aliasing, respectively. Also, modelling by support vector machine (SVM) on the proposed memristor-based ROPUF only shows 61.95% accuracy, thereby indicating strong resistance against SVM.</span>

High Resolution Replication of Organoclay Surfaces

1982 ◽  
Vol 40 ◽  
pp. 576-577
Author(s):  
W. W. Barker ◽  
W. E. Rigsby ◽  
V. J. Hurst ◽  
W. J. Humphreys
Keyword(s):  
Clay Mineral ◽  
Organic Molecule ◽  
Organic Molecules ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Naturally Occurring ◽  
Silicate Layers ◽  
Mineral Identification

Experimental clay mineral-organic molecule complexes long have been known and some of them have been extensively studied by X-ray diffraction methods. The organic molecules are adsorbed onto the surfaces of the clay minerals, or intercalated between the silicate layers. Natural organo-clays also are widely recognized but generally have not been well characterized. Widely used techniques for clay mineral identification involve treatment of the sample with H2 O2 or other oxidant to destroy any associated organics. This generally simplifies and intensifies the XRD pattern of the clay residue, but helps little with the characterization of the original organoclay. Adequate techniques for the direct observation of synthetic and naturally occurring organoclays are yet to be developed.

Direct phase determination in electron crystallography: small organic molecules

1992 ◽  
Vol 50 (2) ◽  
pp. 1166-1167
Author(s):  
Douglas L. Dorset
Keyword(s):  
Organic Molecules ◽  
Data Sets ◽  
Temperature Structure ◽  
3D Analysis ◽  
Intensity Data ◽  
Electron Crystallography ◽  
Phase Determination ◽  
Measured Intensity ◽  
3D Data

The quantitative use of electron diffraction intensity data for the determination of crystal structures represents the pioneering achievement in the electron crystallography of organic molecules, an effort largely begun by B. K. Vainshtein and his co-workers. However, despite numerous representative structure analyses yielding results consistent with X-ray determination, this entire effort was viewed with considerable mistrust by many crystallographers. This was no doubt due to the rather high crystallographic R-factors reported for some structures and, more importantly, the failure to convince many skeptics that the measured intensity data were adequate for ab initio structure determinations.We have recently demonstrated the utility of these data sets for structure analyses by direct phase determination based on the probabilistic estimate of three- and four-phase structure invariant sums. Examples include the structure of diketopiperazine using Vainshtein's 3D data, a similar 3D analysis of the room temperature structure of thiourea, and a zonal determination of the urea structure, the latter also based on data collected by the Moscow group.

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