scholarly journals Steep sulfur gradient in CZTSSe solar cells by H2S-assisted rapid surface sulfurization

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12687-12695
Author(s):  
Teoman Taskesen ◽  
Devendra Pareek ◽  
Dirk Hauschild ◽  
Alan Haertel ◽  
Lothar Weinhardt ◽  
...  

This article demonstrates a flash-type kinetic sulfurization method to introduce band-gap grading in CZTSe based photovoltaic devices. The developed approach allows to achieve a steep grading profile on kesterite thin-film surface.

2003 ◽  
Vol 76 (4) ◽  
pp. 625-635 ◽  
Author(s):  
N.L. Dmitruk ◽  
O.Yu. Borkovskaya ◽  
I.N. Dmitruk ◽  
I.B. Mamontova

2012 ◽  
Vol 433-440 ◽  
pp. 302-305
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Ping Luan

Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.


Author(s):  
M. A. Tit ◽  
S. N. Belyaev

This article considers the research results of the effect of stoichiometry on the properties of titanium nitride thin-film coatings of the float and electrostatic gyroscopes. It presents the results of tests of such mechanical and optical characteristics of titanium nitride thin-film structures as microhardness, resistance to wear and friction, and image contrast determined by the reflection coefficients of a titanium nitride base surface and a raster pattern formed by local laser oxidation. When making a rotor of a cryogenic gyroscope, the prospects of use and technological methods for the formation of functional surface structures of niobium carbide and nitride are considered. It is shown that during the formation of coatings of the required composition, the most important is the thermodynamic estimation of possible interactions. These interactions allow us to accomplish the structural-phase modification of the material, which is determined by the complex of possible topochemical reactions leading to the formation of compounds, including non-stoichiometric composition.


2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  

2001 ◽  
Vol 668 ◽  
Author(s):  
J. Fritsche ◽  
S. Gunst ◽  
A. Thiβen ◽  
R. Gegenwart ◽  
A. Klein ◽  
...  

ABSTRACTTin dioxide (SnO2) coated glass is the commonly used substrate for thin film solar cells based on CdTe absorbers. We have investigated the properties of the CdS/SnO2 interface by X-ray and ultraviolet photoelectron spectroscopy. SnO2 coated glass substrates as used for solar cell preparation were cleaned by different procedures such as derinsing, sputtering, heating and annealing in oxygen atmosphere. Different surface properties with a strongly dependent number of defects in the SnO2 band gap are identified. CdS films were deposited stepwise by thermal evaporation to determine the electronic interface properties for different surface preparation conditions. Comparative barrier heights at the CdSSnO2 contact are found for most surface pretreatments. The Fermi level position in these cases is situated in the SnO2 band gap. A different interface behaviour is determined for sputter cleaned SnO2 surfaces, which is attributed to the formation of oxygen vacancies during sputtering and subsequent formation of an interfacial SnOxSy compound.


2014 ◽  
Vol 47 (13) ◽  
pp. 135105 ◽  
Author(s):  
Se Jin Park ◽  
Yunae Cho ◽  
Sung Hwan Moon ◽  
Ji Eun Kim ◽  
Doh-Kwon Lee ◽  
...  

2019 ◽  
Vol 466 ◽  
pp. 358-366 ◽  
Author(s):  
Ashwini B. Rohom ◽  
Priyanka U. Londhe ◽  
Jeong In Han ◽  
Nandu B. Chaure

Sign in / Sign up

Export Citation Format

Share Document