Transient reshaping of intraband transitions by hot electrons

Nanoscale ◽  
2022 ◽  
Author(s):  
Benjamin T. Diroll ◽  
Tathagata Banerjee
Keyword(s):  
Quantum Wells ◽  
Hot Electrons ◽  
Band Edge

Hot electrons transiently redshift intraband transitions of colloidal quantum wells when electrons are excited above the band edge.

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

Erratum: Energy-loss rates for hot electrons and holes in GaAs quantum wells [Phys. Rev. Lett. 54, 2045 (1985)]

1988 ◽  
Vol 60 (18) ◽  
pp. 1885-1885
Author(s):  
Jagdeep Shah ◽  
A. Pinczuk ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Energy Loss ◽  
Quantum Wells ◽  
Hot Electrons ◽  
Loss Rates

Effects of acoustic anisotropy and screening on the energy relaxation of hot electrons in heterojunctions and quantum wells

2002 ◽  
Vol 65 (8) ◽  
Author(s):  
D. Lehmann ◽  
A. J. Kent ◽  
Cz. Jasiukiewicz ◽  
A. J. Cross ◽  
P. Hawker ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Hot Electrons ◽  
Acoustic Anisotropy

Band‐edge photoluminescence of SiGe/strained‐Si/SiGe type‐II quantum wells on Si(100)

1993 ◽  
Vol 63 (25) ◽  
pp. 3509-3511 ◽  
Author(s):  
Deepak K. Nayak ◽  
Noritaka Usami ◽  
Susumu Fukatsu ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Type Ii ◽  
Strained Si ◽  
Type Ii Quantum Wells

Band‐edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

1989 ◽  
Vol 54 (14) ◽  
pp. 1356-1358 ◽  
Author(s):  
Alan Kost ◽  
H. C. Lee ◽  
Yao Zou ◽  
P. D. Dapkus ◽  
Elsa Garmire
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Coefficients ◽  
Edge Absorption
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