Oxidation and Degradation of WS2 Monolayers Grown by NaCl-Assisted Chemical Vapor Deposition: Mechanism and Prevention

Nanoscale ◽  
2021 ◽  
Vol 13 (39) ◽  
pp. 16629-16640
Author(s):  
Yao-Pang Chang ◽  
Wei-Bang Li ◽  
Yueh-Chiang Yang ◽  
Hsueh-Lung Lu ◽  
Ming-Fa Lin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Flow Direction ◽  
Chemical Vapor ◽  
Deposition Mechanism ◽  
The Stability

Adjusting the orientation of the sapphire substrate to align the gas flow direction in the NaCl-assisted CVD process can improve the stability of monolayer WS2.

Effect of Temperature and Gas Flow on Bi2Se3 Nanoplates Grown by Chemical Vapor Deposition

2018 ◽  
Vol 18 (11) ◽  
pp. 7590-7594 ◽  
Author(s):  
Peng Gu ◽  
Jinling Yu ◽  
Xiaolin Zeng ◽  
Shuying Cheng ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Effect Of Temperature

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition

2016 ◽  
Vol 37 (8) ◽  
pp. 984-989
Author(s):  
巩 哲 GONG Zhe ◽  
何大伟 HE Da-wei ◽  
王永生 WANG Yong-sheng ◽  
许海腾 XU Hai-teng ◽  
董艳芳 DONG Yan-fang
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Controllable Synthesis ◽  
High Quality ◽  
Large Size

Influences of gas flow on chemical vapor deposition of superconducting Nb‐Ge films

1981 ◽  
Vol 39 (4) ◽  
pp. 354-356 ◽  
Author(s):  
Mitsumasa Suzuki ◽  
Hiroshi Onodera ◽  
Takeshi Anayama ◽  
Gin‐ichiro Oya ◽  
Yutaka Onodera
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor
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