Layered (n-C4H9NH3)2CsAgBiBr7 Perovskite for Bipolar Resistive Switching Memory with High ON/OFF Ratio

Nanoscale ◽  
2021 ◽  
Author(s):  
So-Yeon Kim ◽  
June-Mo Yang ◽  
Sun-Ho Lee ◽  
Nam-Gyu Park
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Potential Candidate ◽  
Bipolar Resistive Switching ◽  
3 Dimensional ◽  
Resistive Switching Memory ◽  
Halide Perovskite ◽  
Switching Memory

Lead-based halide perovskite has been proposed as a potential candidate for resistive switching memristor due to high ON/OFF ratio along with millivolt-level low operational voltage. However, lead-free perovskites with 3-dimensional...

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

scholarly journals Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 540 ◽  
Author(s):  
Wang ◽  
Wen
Keyword(s):  
Bombyx Mori ◽  
Resistive Switching ◽  
Body Fluid ◽  
The Body ◽  
Fluid Film ◽  
Switching Behavior ◽  
Memory Devices ◽  
Potential Candidate ◽  
Resistive Switching Memory ◽  
Switching Memory

Resistive switching memory devices are strong candidates for next-generation data storage devices. Biological memristors made from renewable natural biomaterials are very promising due to their biocompatibility, biodegradability, and ecological benignity. In this study, a nonvolatile memristor was fabricated using the body fluid of Bombyx mori as the dielectric layer. The developed Al/Bombyx mori body fluid film/indium tin oxide (ITO) biomemristor exhibited bipolar resistive switching characteristics with a maximum on/off current ratio greater than 104. The device showed a retention time of more than 1 × 104 s without any signs of deterioration, thus proving its good stability and reliability. The resistive switching behavior of the Al/Bombyx mori body fluid film/ITO biological memristor is driven by the formation and breakage of conductive filaments formed by the migration of oxygen ions. This study confirms that Bombyx mori body fluid, a 100% natural, inexpensive, and abundant material, is a potential candidate as a nonvolatile biomemristor material with broad application prospects.

scholarly journals Resistive Switching Memory: Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory (Small 41/2020)

Small ◽  
2020 ◽  
Vol 16 (41) ◽  
pp. 2070228
Author(s):  
Ji Su Han ◽  
Quyet Van Le ◽  
Hyojung Kim ◽  
Yoon Jung Lee ◽  
Da Eun Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Dual Phase ◽  
Resistive Switching Memory ◽  
Halide Perovskites ◽  
Conducting Bridge ◽  
Switching Memory

Metal halide perovskites for resistive switching memory devices and artificial synapses

2019 ◽  
Vol 7 (25) ◽  
pp. 7476-7493 ◽  
Author(s):  
Bixin Li ◽  
Wei Hui ◽  
Xueqin Ran ◽  
Yingdong Xia ◽  
Fei Xia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Metal Halide ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Metal Halide Perovskite ◽  
Recent Developments ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Switching Memory

This article highlights recent developments of emerging metal halide perovskite based resistive switching memory devices and artificial synapses.

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type
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