High speed growth of MAPbBr3 single crystals via low-temperature inverting solubility: enhancement of mobility and trap density for photodetector applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Yunae Cho ◽  
Hye Ri Jung ◽  
Yeon Soo Kim ◽  
Yejin Kim ◽  
Joohee Park ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Low Temperature ◽  
Low Temperatures ◽  
High Speed ◽  
Single Crystal Growth ◽  
Complete Dissolution ◽  
High Quality ◽  
Optoelectronic Application ◽  
Hybrid Perovskite ◽  
First Time

High-quality CH3NH3PbBr3 hybrid perovskite single crystal growth and outstanding optoelectronic application using the complete dissolution at low temperatures based on low temperature solubility, which has been demonstrated for the first time.

High quality FeSb2 single crystal growth by the gradient freeze technique

2013 ◽  
Vol 363 ◽  
pp. 128-131 ◽  
Author(s):  
Yiming Cao ◽  
Shujuan Yuan ◽  
Ming Liu ◽  
Baojuan Kang ◽  
Bo Lu ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
High Quality

Single crystal growth of GdB6 by the optical floating-zone technique

CrystEngComm ◽  
2020 ◽  
Vol 22 (47) ◽  
pp. 8236-8242
Author(s):  
Shu-yu Ning ◽  
Xinyu Yang ◽  
Yan Wang ◽  
Zhongwen Zhu ◽  
Jiuxing Zhang
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Molten Zone ◽  
Floating Zone ◽  
Zone Method ◽  
High Quality ◽  
Floating Zone Method

A high-quality and large-sized GdB6 single crystal was successfully prepared by using the optical floating zone method to accurately control the temperature and composition of the molten zone.

Low-temperature Preparation of Crystallized Zirconia Films by ECR Plasma MOCVD

2005 ◽  
Vol 890 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Low Temperatures ◽  
Monoclinic Zirconia ◽  
High Quality ◽  
Ion Chamber ◽  
Ecr Plasma ◽  
Low Temperature Preparation ◽  
Oxide Ion ◽  
Zirconia Films

ABSTRACTIt is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD.Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes.Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.

Dielectric Loss in Li- and Na-Swept α-Quartz and the Effect of Irradiation

1983 ◽  
Vol 24 ◽  
Author(s):  
J. Toulouse ◽  
A.S. Nowick
Keyword(s):  
Dielectric Loss ◽  
Low Temperature ◽  
Low Temperatures ◽  
Quantum Effects ◽  
Frequency Stability ◽  
Distorted Tetrahedron ◽  
High Quality ◽  
Quartz Crystals ◽  
Alkali Ions ◽  
Synthetic Crystals

ABSTRACTAlkali ions, which compensate for substitional Al3+, play an important role in the frequency stability of α-quartz crystals. In this work, low temperature dielectricloss measurements (between 2.9 and 300 K) are carried out on crystals that have been “swept” so as to introduce either Li+ or Na+. High quality synthetic crystals as well as natural crystals are employed. The well known loss peaks due to Al-Na pairs are further explored and similar peaks due to Al-Li are sought after but not found. It is concluded that the Al-Li pair is oriented along the C2 -axis of the A104 distorted tetrahedron. After irradiation, large peaks are observed at very low temperatures both in Li+- and Na+-containing crystals. These peaks, which are distorted below ∼6 K due to the onset of quantum effects, may originate in alkali centers produced when alkali ions are liberated by the irradiation.

Single Crystal Growth and Low Temperature Properties of PrNb2Al20

2011 ◽  
Vol 80 (Suppl.A) ◽  
pp. SA048 ◽  
Author(s):  
R. Higashinaka ◽  
A. Nakama ◽  
M. Ando ◽  
M. Watanabe ◽  
Y. Aoki ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Low Temperature ◽  
Single Crystal ◽  
Single Crystal Growth

PERSISTENT PHOTOCONDUCTIVITY IN La0.7CaxBa1-xMnO3 THIN FILMS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3786-3791 ◽  
Author(s):  
R. CAURO ◽  
J. C. GRENET ◽  
A. GILABERT ◽  
M. G. MEDICI
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Visible Light ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Persistent Photoconductivity ◽  
Temperature Range ◽  
Insulator Metal Transition ◽  
First Time

We report, for the first time, experiments of persistent photoconductivity (PPC) in thin films of manganese perovskites La 0.7 Ca 0.25 Ba 0.05 MnO 3 and La 0.7 Ca 0.2 Ba 0.1 MnO 3 showing a persistent decrease of a few percent of the resistance after illumination with visible light. These persistent photoinduced effects are seen only in a range of low temperatures (<25 K) well below the insulator-metal transition at respectively T c=173 K and T c=120 K. In this low temperature range, the transport mechanism is rather of activated hopping type regime.

High-quality single crystal growth of uranium-based intermetallics

1998 ◽  
Vol 177-181 ◽  
pp. 437-438 ◽  
Author(s):  
Y. Haga ◽  
E. Yamamoto ◽  
N. Kimura ◽  
M. Hedo ◽  
H. Ohkuni ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
High Quality ◽  
High Quality Single Crystal
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