Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers

Nanoscale ◽  
2021 ◽  
Author(s):  
Vladimir Poborchii ◽  
Jesse Groenen ◽  
Pavel I. Geshev ◽  
Junichi Hattori ◽  
Wen Hsin Chang ◽  
...  
Keyword(s):  
Band Gap ◽  
Acoustic Phonon ◽  
Optical Study ◽  
Phonon Confinement ◽  
Electron Band ◽  
Interface Disorder

Ge-on-insulator (GeOI) acoustic phonon frequencies and E1 electron band gap vs. GeOI thickness (T) show agreement with confinement theories at T > 5 nm and disagree at T < 5 nm. Al2O3 coating improves agreement at T < 5 nm due to interface disorder reduction.

Theoretical study of modified electron band dispersion and density of states due to high frequency phonons in graphene-on-substrates

2018 ◽  
Vol 07 (04) ◽  
pp. 1850024
Author(s):  
Sivabrata Sahu ◽  
G. C. Rout
Keyword(s):  
Band Gap ◽  
Density Of States ◽  
High Frequency ◽  
Vibrational Energy ◽  
Harmonic Approximation ◽  
Coulomb Energy ◽  
Electron Band ◽  
Band Dispersion ◽  
Energy Formula ◽  
Sublattice Site

We propose here a theoretical model for the study of band gap opening in graphene-on- polarizable substrate taking the effect of electron–electron and electron–phonon (EP) interactions at high frequency phonon vibrations. The Hamiltonian consists of hopping of electrons upto third nearest- neighbors and the effect substrate, where A sublattice site is raised by energy [Formula: see text] and B sublattice site is suppressed by energy [Formula: see text], hence producing a band gap energy of [Formula: see text]. Further, we have considered Hubbard type electron–electron repulsive interactions at A and B sublattices, which are considered within Hartree–Fock meanfield approximation. The electrons in the graphene plane interact with the phonon’s present in the polarized substrate in the presence of phonon vibrational energy within harmonic approximation. The temperature-dependent electron occupancies are computed numerically and self-consistently for both spins at both the sublattice sites. By using these electron occupancies, we have calculated the electron band dispersion and density of states (DOS), which are studied for the effects of EP interaction, high phonon frequency, Coulomb energy and substrate induced gap.

Brillouin study of acoustic phonon confinement in GeO2 nanocubes

2007 ◽  
Vol 91 (9) ◽  
pp. 093116 ◽  
Author(s):  
Y. Li ◽  
H. S. Lim ◽  
S. C. Ng ◽  
M. H. Kuok ◽  
M. Y. Ge ◽  
...  
Keyword(s):  
Acoustic Phonon ◽  
Phonon Confinement

An optical study ofa-Ge20Se80−xInxthin films in sub-band gap region

2007 ◽  
Vol 40 (15) ◽  
pp. 4460-4465 ◽  
Author(s):  
Ishu Sharma ◽  
S K Tripathi ◽  
P B Barman
Keyword(s):  
Band Gap ◽  
Optical Study

A calculation of the electron band gap in molten UO2

1981 ◽  
Vol 98 (3) ◽  
pp. 241-246 ◽  
Author(s):  
D.A. MacInnes ◽  
D. Martin
Keyword(s):  
Band Gap ◽  
Electron Band
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