Selective area grown AlInGaN nanowire arrays with core–shell structures for photovoltaics on silicon

Nanoscale ◽  
2021 ◽  
Author(s):  
Renjie Wang ◽  
Shaobo Cheng ◽  
Srinivas Vanka ◽  
Gianluigi A. Botton ◽  
Zetian Mi
Keyword(s):  
Buffer Layer ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Shell Structures ◽  
Core Shell ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Selective Area ◽  
Area Growth ◽  
Photovoltaic Applications

By employing a conductive buffer layer, the selective area growth of close-packed AlInGaN core–shell nanowire array and its photovoltaic applications with higher efficiency and higher Voc are demonstrated on Si substrate.

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

2021 ◽  
Vol 11 (4) ◽  
pp. 1801
Author(s):  
Takuro Fujii ◽  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Hidetaka Nishi ◽  
Koji Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Heterogeneous Integration ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Si Photonics ◽  
Selective Area ◽  
Area Growth ◽  
Indium Gallium

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

Selective-Area Growth of III-Nitride Core-Shell Nanowalls for Light-Emitting and Laser Diodes

CLEO: 2014 ◽  
2014 ◽  
Author(s):  
Ashwin K. Rishinaramangalam ◽  
Michael N. Fairchild ◽  
Saadat M. Ul Masabih ◽  
Darryl M. Shima ◽  
Ganesh Balakrishnan ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Core Shell ◽  
Selective Area Growth ◽  
Light Emitting ◽  
Selective Area ◽  
Area Growth

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

scholarly journals Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth

2018 ◽  
Author(s):  
Matt Brubaker ◽  
Bryan Spann ◽  
Kristen Genter ◽  
Alexana Roshko ◽  
Paul Blanchard ◽  
...  
Keyword(s):  
Core Shell ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications

2011 ◽  
Vol 17 (4) ◽  
pp. 1112-1129 ◽  
Author(s):  
Katsuhiro Tomioka ◽  
Tomotaka Tanaka ◽  
Shinjiro Hara ◽  
Kenji Hiruma ◽  
Takashi Fukui
Keyword(s):  
Selective Area Growth ◽  
Si Substrate ◽  
Selective Area ◽  
Area Growth ◽  
Device Applications

Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy

2017 ◽  
Author(s):  
K. Zhang ◽  
V. Ray ◽  
P. Herrera-Fierro ◽  
J. R. Sink ◽  
F. Toor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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