Formic acid and formate salts for chemical vapor deposition of copper on glass substrates under atmospheric pressure

2021 ◽  
Author(s):  
Omid Mokhtari ◽  
Fosca Conti ◽  
Rodolfo Saccon ◽  
Sri Krishna Bhogaraju ◽  
Gordon Elger
Keyword(s):  
Chemical Vapor Deposition ◽  
Formic Acid ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Glass Substrates

Chemical vapor deposition (CVD) is typically at pressures below 100 kPa, because the quality of the produced film usually degrades at higher pressures. Two approaches of CVD are presented in...

Photoluminescent Properties of ZnO Layers Prepared by Organometallic Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. Bethke ◽  
H-C Pan ◽  
B. W. Wessels
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Deep Level ◽  
Chemical Vapor ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Emission ◽  
Deposition Conditions ◽  
Organometallic Chemical Vapor Deposition

ABSTRACTZnO layers have been heteroepitaxially deposited on sapphire using organometallic chemical vapor deposition at atmospheric pressure. The quality of the layers was assessed using photoluminescence spectroscopy at 16K. The layers exhibited strong ultraviolet near bandedge luminescence. The dependence of near bandedge and deep level photoluminescence emission on deposition conditions was examined.

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

The Cooling Rate Effect on Graphene Synthesis Using Low Pressure Chemical Vapor Deposition

2021 ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Time ◽  
Carbon Source ◽  
Cooling Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Feeding Time ◽  
Process Variables ◽  
Pressure Chemical

Abstract Low-pressure chemical vapor deposition (LPCVD) is the most efficient method to synthesize large-scale, high-quality graphene for many potential applications such as flexible electronics, solar cells, and separation membranes. The quality of LPCVD is affected by process variables including methane/hydrogen (CH4/H2) ratio, time, pressure, temperature, and cooling rate. The cooling rate has been recognized as one of the most important process variables affecting the amount of carbon source, nucleation, reaction time, and thus the quality of the LPCVD. In this research, we investigate the effect of cooling rate on the quality of graphene synthesize by changing the cooling rate and the gas feeding time. Graphene coverage is measured by Raman mapping. It is found that fast cooling rate leads to decreased carbon source reaction time, which in turn results in higher coverage by monolayer graphene. The temperature-dependent gas feeding time corresponding to different cooling rates can be used to properly supply the carbon source onto the copper surface, also leading to a higher graphene coverage.

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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