scholarly journals Phonon confinement and interface lattice dynamics of ultrathin high-k rare earth sesquioxide films: the case of Eu2O3 on YSZ(001)

2022 ◽  
Author(s):  
Svetoslav Stankov ◽  
Dániel G. Merkel ◽  
Jochen Kalt ◽  
Jörg Göttlicher ◽  
Jan Łażewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lattice Dynamics ◽  
Phonon Confinement ◽  
Vibrational Dynamics ◽  
High K ◽  
Crystal Phases ◽  
Thick Layers

We demonstrate that sub-nanometer-thick layers exhibiting exotic crystal phases that might form at the interface between two materials constitute a source of novel vibrational dynamics of thin films and multilayers.

Atomic Layer Deposition of Rare-earth Oxide Thin Films for High-k Dielectric Applications

2019 ◽  
Vol 19 (2) ◽  
pp. 525-536 ◽  
Author(s):  
Nathan A. Stafford ◽  
Rajesh Katamreddy ◽  
Laurie Guerin ◽  
Ben Feist ◽  
Christian Dussarrat ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Atomic Layer Deposition ◽  
Rare Earth Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

Preferential Orientation of Photochromic Gadolinium Oxyhydrides

2020 ◽  
Author(s):  
Elbruz Murat Baba ◽  
Jose Montero ◽  
Dmitrii Moldarev ◽  
Marcos V. Moro ◽  
Max Wolff ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rare Earth ◽  
Preferential Orientation ◽  
Reactive Magnetron ◽  
Flow Ratio ◽  
Deposition Pressure ◽  
Step Process ◽  
Oxidation In Air ◽  
Key Parameter

<p>We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH<sub>2-x</sub>) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H<sub>2</sub>/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas. </p>

Interdiffusion Induced High Coercivity of Rare-Earth Free Alnico Thin Films

2019 ◽  
Author(s):  
Xiao Han ◽  
Hoyun Won ◽  
Minyeong Choi ◽  
Liping Guo ◽  
Zhongqi Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
High Coercivity

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Ferrimagnetic rare‐earth orthoferrites: A new, magnetic substrate for the growth of epitaxial Y‐Ba‐Cu‐O thin films

1989 ◽  
Vol 55 (11) ◽  
pp. 1138-1140 ◽  
Author(s):  
R. Ramesh ◽  
A. Inam ◽  
W. A. Bonner ◽  
P. England ◽  
B. J. Wilkens ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Magnetic Substrate

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

2016 ◽  
Vol 8 (45) ◽  
pp. 31128-31135 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Qi-Jun Sun ◽  
Ye Zhou ◽  
Su-Ting Han ◽  
Li Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Gate Dielectric ◽  
Rare Earth Oxide ◽  
Oxide Thin Films ◽  
Solution Processed
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