scholarly journals On-Surface Chemistry Using Local High Electric Fields

2021 ◽  
Author(s):  
Thomas Leoni ◽  
Tony Lelaidier ◽  
Anthony Thomas ◽  
Alain Ranguis ◽  
Olivier Siri ◽  
...  
Keyword(s):  
Electric Field ◽  
Surface Chemistry ◽  
Electric Fields ◽  
High Electric Field ◽  
Scanning Tunnelling Microscope ◽  
Scanning Tunnelling ◽  
High Electric Fields

Dihydrotetraazapentacene (DHTAP) molecules can be dehydrogenated on the surface to form tetraazapentacene (TAP), by applying a high electric field between the tip of a scanning tunnelling microscope (STM) and a...

Effect of a High Electric Field on the Thermal and Phase Change Characteristics of an Impacting Drop

2019 ◽  
Author(s):  
Abhishek Basavanna ◽  
Prajakta Khapekar ◽  
Navdeep Singh Dhillon
Keyword(s):  
Heat Transfer ◽  
Electric Field ◽  
Phase Change ◽  
Electric Fields ◽  
High Speed ◽  
Impact Behavior ◽  
Liquid Drops ◽  
Active Interest ◽  
Post Impact ◽  
High Electric Fields

Abstract The effect of applied electric fields on the behavior of liquids and their interaction with solid surfaces has been a topic of active interest for many decades. This has important implications in phase change heat transfer processes such as evaporation, boiling, and condensation. Although the effect of low to moderate voltages has been studied, there is a need to explore the interaction of high electric fields with liquid drops and bubbles, and their effect on heat transfer and phase change. In this study, we employ a high speed optical camera to study the dynamics of a liquid drop impacting a hot substrate under the application of high electric fields. Experimental results indicate a significant change in the pre- and post-impact behavior of the drop. Prior to impact, the applied electric field elongates the drop in the direction of the electric field. Post-impact, the recoil phase of the drop is significantly affected by charging effects. Further, a significant amount of micro-droplet ejection is observed with an increase in the applied voltage.

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 1007-1010 ◽  
Author(s):  
Christophe Raynaud ◽  
Daniel Loup ◽  
Phillippe Godignon ◽  
Raul Perez Rodriguez ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Semiconductor Devices ◽  
Optical Beam ◽  
Induced Current ◽  
Bipolar Diodes ◽  
High Electric Fields ◽  
Optical Beam Induced Current

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

scholarly journals Confined Pulsed Diffuse Layer Charging for Nanoscale Electrodeposition with a Scanning Tunnelling Microscope

2022 ◽  
Author(s):  
Mark Aarts ◽  
Alain Reiser ◽  
Spolenak Ralph ◽  
Esther Alarcon-Llado
Keyword(s):  
Electric Fields ◽  
Liquid Interface ◽  
The State ◽  
Scanning Probe ◽  
Diffuse Layer ◽  
Scanning Tunnelling Microscope ◽  
Scanning Tunnelling ◽  
Solid Liquid Interface ◽  
Solid Liquid

Regulating the state of the solid-liquid interface by means of electric fields is a powerful tool to control electrochemistry. In scanning probe systems, this can be confined closely to a...

scholarly journals Corona at Large Coated Electrodes

2018 ◽  
Author(s):  
Mats Larsson ◽  
Olof Hjortstam ◽  
Håkan Faleke ◽  
Liliana Arevalo ◽  
Dong Wu ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Negative Polarity ◽  
Electrode Geometry ◽  
Positive Polarity ◽  
Electrical Fields ◽  
Insulating Material ◽  
Air Gaps ◽  
High Electric Fields ◽  
Coated Electrodes

<p>In geometries relevant form HVDC applications where large electrodes and large air gaps are utilized, the observed corona can be quite different from geometries studied in the literature where needles or wires are used as high voltage electrodes. Corona discharges at large electrodes often initiates when the electric field on the electrode surface appears lower than the critical electric field strength, 2.4 kV/mm. Surface contamination of the electrode has been pointed out as the reason for such discharge events. Our experimental results indicate that one possible way to prevent such corona is to coat the electrode with an insulating material, such as epoxy or oxide layers. It seems that the layer separates any corona inducing particle from the electrode, which in turn hinders the corona to form. However, as the layer breaks down and gets punctured, the corona preventing propertied disappears and corona forms easily. We conclude that as long as the layer doesn’t get punctured, coating electrodes with insulating material is preventing corona to initiate at electrical fields below the critical electric field, as given by the electrode geometry. In contrast to positive polarity, for negative polarity the epoxy coating could withstand high electric fields without breaking down.</p>

Calculations of Some Transport Coefficients in Simple Semiconductors at Low Temperatures and High Electric Fields

1971 ◽  
Vol 49 (7) ◽  
pp. 876-880 ◽  
Author(s):  
Jyoti Kamal ◽  
Satish Sharma
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Low Temperatures ◽  
Transport Coefficients ◽  
Drift Mobility ◽  
Temperature Dependent ◽  
Hall Constant ◽  
The Difference ◽  
High Electric Fields ◽  
Model Semiconductor

In this paper the authors have calculated Hall mobility, drift mobility, and Hall constant for a non-degenerate simple model semiconductor at low temperatures for an arbitrary electric field strength. Following Paranjape the modified distribution of phonons has been taken into account. The difference between the calculations of transport coefficients made by taking into account the modified phonon distribution and by not taking it into account is quite appreciable at high electric field. Calculations also show that for Ne = 1016/cm3 the mobility of electrons remains temperature dependent.

Research on Charge Transport in One-Dimensional Organic Semiconductors Material

2012 ◽  
Vol 531 ◽  
pp. 231-234 ◽  
Author(s):  
Wen Liu
Keyword(s):  
Electric Field ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Electric Fields ◽  
One Dimensional ◽  
Organic Semiconductor Materials ◽  
Insulator Metal Transition ◽  
The Family ◽  
High Electric Fields ◽  
Ssh Model

1D conjugated polymers belong to the family of organic semiconductor materials, in which the charge carriers are polarons or bipolarons. Charge transport in 1D organic semiconductors in the presence of high electric fields is studied within the SSH model. It is found that under a sufficiently high electric field, the polaron is dissociated into free-like electron. The electron performs Bloch oscillation (BO) in the organic semiconductors. By enhancing the electric field, BO will be destroyed and electrons can transit from the valence band to the conduction band, which is Zener tunneling in organic semiconductors. The results also indicate a field-induced insulator-metal transition.

scholarly journals Influence of Different Solvents and High-Electric-Field Cycling on Morphology and Ferroelectric Behavior of Poly(Vinylidene Fluoride-Hexafluoropropylene) Films

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3884
Author(s):  
Till Mälzer ◽  
Lena Mathies ◽  
Tino Band ◽  
Robert Gorgas ◽  
Hartmut S. Leipner
Keyword(s):  
Phase Composition ◽  
Electric Field ◽  
Surface Structure ◽  
Electric Fields ◽  
Vinylidene Fluoride ◽  
High Electric Field ◽  
Crystal Phase ◽  
Shielding Effect ◽  
Ferroelectric Behavior ◽  
Field Cycling

P(VdF-HFP) films are fabricated via a solution casting doctor blade method using high (HVS) and low (LVS) volatile solvents, respectively. The structural properties and the ferroelectric behavior are investigated. The surface structure and crystal phase composition are found to be strongly dependent on the type of solvent. LVS leads to a rougher copolymer surface structure with large spherulites and a lower crystallinity in contrast with HVS. The crystalline phase of copolymer films fabricated with HVS consists almost exclusively of α-phase domains, whereas films from LVS solution show a large proportion of γ-phase domains, as concluded from Raman and X-ray diffraction spectra. Virgin films show no ferroelectric (FE) switching polarization at electric field amplitudes below 180 MV/m, independent of the solvent type, observed in bipolar dielectric displacement—electric field measurements. After applying electric fields of above 180 MV/m, a FE behavior emerges, which is significantly stronger for LVS films. In a repeated measurement, FE polarization switching already occurs at lower fields. A shielding effect may be related to this observation. Additionally, Raman bands of polar γ-phase increase by high-electric-field cycling for the LVS sample. The solvent used and the resulting crystal phase composition of the virgin sample is crucial for the copolymer behavior during bipolar electrical cycling.

Driftgeschwindigkeit und Beweglichkeit von Elektronen in Silicium bei 4,2 °K in Abhängigkeit vom elektrischen Feld / Driftvelocity and Mobility of Electrons in Silicon at 4.2 °K in Dependence of Electric Field

1972 ◽  
Vol 27 (1) ◽  
pp. 26-30
Author(s):  
P. Deimel
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Silicon Surface ◽  
Surface Barrier ◽  
Surface Barrier Detector ◽  
Direct Information ◽  
Fully Depleted ◽  
Barrier Detector ◽  
High Electric Fields ◽  
Silicon Surface Barrier Detector

Abstract The pulse rise times of an n-type silicon surface barrier detector were measured at 4.2 °K. At this temperature the detector was fully depleted even at very low bias and the measured pulse rise times gave direct information about the driftvelocity and the mobility. Instead of E-0.5, an E-0.8 dependence of the mobility at moderate electric fields was found. At high electric fields agreement exists with theory.

scholarly journals Cell Fragmentation and Permeabilization by a 1 ns Pulse Driven Triple-Point Electrode

2018 ◽  
Vol 2018 ◽  
pp. 1-10 ◽  
Author(s):  
Enbo Yang ◽  
Joy Li ◽  
Michael Cho ◽  
Shu Xiao
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Triple Point ◽  
Tungsten Wire ◽  
Low Voltage ◽  
Pulsed Electric Fields ◽  
High Electric Field ◽  
Bubble Collapse ◽  
Principal Mechanism ◽  
Point Electrode

Ultrashort electric pulses (ns-ps) are useful in gaining understanding as to how pulsed electric fields act upon biological cells, but the electric field intensity to induce biological responses is typically higher than longer pulses and therefore a high voltage ultrashort pulse generator is required. To deliver 1 ns pulses with sufficient electric field but at a relatively low voltage, we used a glass-encapsulated tungsten wire triple-point electrode (TPE) at the interface among glass, tungsten wire, and water when it is immersed in water. A high electric field (2 MV/cm) can be created when pulses are applied. However, such a high electric field was found to cause bubble emission and temperature rise in the water near the electrode. They can be attributed to Joule heating near the electrode. Adherent cells on a cover slip treated by the combination of these stimuli showed two major effects: (1) cells in a crater (<100 μm from electrode) were fragmented and the debris was blown away. The principal mechanism for the damage is presumed to be shear forces due to bubble collapse; and (2) cells in the periphery of the crater were permeabilized, which was due to the combination of bubble movement and microstreaming as well as pulsed electric fields. These results show that ultrashort electric fields assisted by microbubbles can cause significant cell response and therefore a triple-point electrode is a useful ablation tool for applications that require submillimeter precision.

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