scholarly journals Photosensitive Schottky Barrier Diode Based on Cu/p-SnSe Thin Film Fabricated by Thermal Evaporation

2022 ◽  
Author(s):  
Hirenkumar Shantilal Jagani ◽  
Shubham Umeshkumar Gupta ◽  
Karan Bhoraniya ◽  
Mayuri Navapariya ◽  
V. M. Pathak ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Schottky Barrier ◽  
Thermal Evaporation ◽  
Compound Semiconductor ◽  
Group Iv ◽  
Memory Switching ◽  
Tin Selenide ◽  
Solid State Devices ◽  
Snse Thin Film

Tin Selenide (SnSe), a group IV-VI compound semiconductor material is used to fabricate various solid state devices such as memory switching devices, P-N junction diodes, Schottky barrier diodes, etc. In...

Solid-State and Vacuum Thermionic Energy Conversion

2005 ◽  
Vol 886 ◽  
Author(s):  
Ali Shakouri ◽  
Z. Bian ◽  
R. Singh ◽  
Y. Zhang ◽  
D. Vashaee ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Solid State ◽  
Energy Conversion ◽  
Thermionic Emission ◽  
Hot Electron ◽  
Research Activities ◽  
Solid State Devices ◽  
Thermionic Energy Conversion ◽  
Thermionic Energy

ABSTRACTA brief overview of the research activities at the Thermionic Energy Conversion (TEC) Center is given. The goal is to achieve direct thermal to electric energy conversion with >20% efficiency and >1W/cm2 power density at a hot side temperature of 300–650C. Thermionic emission in both vacuum and solid-state devices is investigated. In the case of solid-state devices, hot electron filtering using heterostructure barriers is used to increase the thermoelectric power factor. In order to study electron transport above the barriers and lateral momentum conservation in thermionic emission process, the current-voltage characteristic of ballistic transistor structures is investigated. Embedded ErAs nanoparticles and metal/semiconductor multilayers are used to reduce the lattice thermal conductivity. Cross-plane thermoelectric properties and the effective ZT of the thin film are analyzed using the transient Harman technique. Integrated circuit fabrication techniques are used to transfer the n- and p-type thin films on AlN substrates and make power generation modules with hundreds of thin film elements. For vacuum devices, nitrogen-doped diamond and carbon nanotubes are studied for emitters. Sb-doped highly oriented diamond and low electron affinity AlGaN are investigated for collectors. Work functions below 1.6eV and vacuum thermionic power generation at temperatures below 700C have been demonstrated.

Investigations on Tin Selenide Thin Film Based Schottky Barrier Diodes by I-V-T Method

2013 ◽  
Vol 665 ◽  
pp. 297-301
Author(s):  
Kiran Kumar Patel ◽  
K.D. Patel ◽  
Mayur Patel ◽  
Keyur S. Hingarajiya ◽  
V.M. Pathak
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
X Rays ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Glass Substrates ◽  
Tin Selenide ◽  
Transmission Electron ◽  
Evaporation Technique ◽  
Selenide Thin Film

Tin Selenide thin films have been deposited using thermal evaporation technique on chemically and ultrasonically cleaned glass substrates. The stoichiometry of deposited films has been studied using Energy Dispersive Analysis of X-rays (EDAX).The orthorhombic structure and polycrystalline nature of the films were also revealed by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. The well characterized thin film of SnSe was then used to fabricate Ag/p-SnSe/In Schottky barrier diode. The I-V characteristics of prepared diodes have been investigated over the temperature range of 303 K to 393 K. The forward biased I-V characteristics of prepared structure has been analyzed using TE theory and different device parameters have been evaluated and discussed in present paper. The Richardson constant was also determined from the conventional Richardson plot and it is found close to the reported value.

Thin-Film Solid State Devices Based on Nonlinear Magnetostatic Waves

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2438-L2441 ◽  
Author(s):  
A. D. Boardman ◽  
Yu. V. Gulyaev ◽  
S. A. Nikitov
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Magnetostatic Waves ◽  
Solid State Devices

Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies

1974 ◽  
Vol 32 ◽  
pp. 548-549
Author(s):  
T. J. Magee ◽  
J. Peng ◽  
J. Bean
Keyword(s):  
Electron Microscope ◽  
Sulfuric Acid ◽  
Solid State ◽  
Sample Preparation ◽  
Cadmium Telluride ◽  
Potassium Dichromate ◽  
Optical Components ◽  
The Past ◽  
Solid State Devices

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.

Physical and Optical Properties of The Films Ð’i2Te3-Bi2Se3

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Surface Temperature ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Internal Surface ◽  
Differential Resistance ◽  
Work Cycle

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.

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