CVD grown GaSbxN1-x films as visible-light active photoanodes
The III-V semiconductor GaN is a promising material for photoelectrochemical (PEC) cells, however the large bandgap of 3.45 eV is a considerable hindrance for the absorption of visible light. Therefore,...
2016 ◽
Vol 13
(1)
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pp. 110-116
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2021 ◽
Vol 28
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pp. 100445
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2020 ◽
Vol 106
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pp. 104773