Luminescent Cu4I4-cubane clusters based on N-methyl-5,10-dihydrophenarsazines

2021 ◽  
Vol 50 (38) ◽  
pp. 13421-13429
Author(s):  
Milyausha F. Galimova ◽  
Ekaterina M. Zueva ◽  
Alexey B. Dobrynin ◽  
Ilya E. Kolesnikov ◽  
Rustem R. Musin ◽  
...  
Keyword(s):  
Dft Calculations ◽  
Dual Band ◽  
Temperature Dependent ◽  
Band Emission ◽  
Cubane Clusters

Luminescent As-supported Cu4I4 cubane tetramers with a dual band emission, showing temperature-dependent intensities, were synthesized and studied in detail by DFT calculations.

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

2021 ◽  
Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dft Calculations ◽  
Bond Length ◽  
Dielectric Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Temperature Dependent ◽  
High Dielectric

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.

Dynamics and mechanism of the Crystal II → smecticG phase transition in TB7A by a temperature-dependent micro-Raman study and DFT calculations

2009 ◽  
Vol 40 (8) ◽  
pp. 881-886 ◽  
Author(s):  
K. Vikram ◽  
Sunil K. Srivastava ◽  
Animesh K. Ojha ◽  
S. Schlücker ◽  
W. Kiefer ◽  
...  
Keyword(s):  
Phase Transition ◽  
Dft Calculations ◽  
Temperature Dependent ◽  
Raman Study

scholarly journals Temperature-dependent phase evolution of copper-oxide thin-films on Au(111)

2018 ◽  
Vol 20 (8) ◽  
pp. 5636-5643 ◽  
Author(s):  
Christoph Möller ◽  
Hanna Fedderwitz ◽  
Claudine Noguera ◽  
Jacek Goniakowski ◽  
Niklas Nilius
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Dft Calculations ◽  
Copper Oxide ◽  
Structural Phase ◽  
Oxide Films ◽  
Phase Evolution ◽  
Structural Phase Transitions ◽  
Oxide Thin Films ◽  
Temperature Dependent

STM and DFT calculations are employed to explore structural phase transitions in thin copper-oxide films grown on Au(111).

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

2007 ◽  
Vol 1055 ◽  
Author(s):  
Brandon Scott Passmore ◽  
Jiang Wu ◽  
Eric A. Decuir ◽  
Omar Manasreh ◽  
Peter M. Lytvyn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Peak Position ◽  
Dual Band ◽  
Intersubband Transitions ◽  
Temperature Dependent ◽  
Mid Infrared ◽  
Poisson Equations ◽  
Infrared Spectral ◽  
Consistent Solution

ABSTRACTThe interband and intersubband transitions in self-assembled InAs and In0.3Ga0.7As quantum dots grown by molecular beam epitaxy have been investigated for their use in visible, near-, and mid-infrared detection applications. Devices based on InAs quantum dots embedded in an InxGa1−xAs (0 to 0.3) graded well and In0.3Ga0.7As quantum dots were fabricated in order to measure the temperature dependent (77 – 300 K) photoresponse. The dark current was measured in the temperature range of 77 to 300 K for the devices. Room temperature photoresponse ranging between 0.6 to 1.3 μm was observed for the InAs and In0.3Ga0.7As quantum dot photodetectors. Furthermore, a dual band photoresponse in the visible, near-, and mid-infrared spectral regions for both devices was observed at 77 K. Using a self-consistent solution of Schrödinger-Poisson equations, the peak position energies of the interband and intersubband transitions in the two multi-color quantum dot infrared photodetector structures was calculated.

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