Pressure-induced Reconstructive Phase Transitions, Polarization with Metallicity, and Enhanced Hardness in Antiperovskite MgCNi3

Author(s):  
Yingqi Cui ◽  
Hao Cheng ◽  
Hao Tian ◽  
Chenggang Li ◽  
Yanan Tang ◽  
...  

In general, hydrostatic pressure can suppress electrical polarization, instead of creating and/or enhancing polarization like strain engineering. Here, a combination of first-principles calculations and CALYPSO crystal structures prediction is used...

2018 ◽  
Vol 122 (18) ◽  
pp. 10103-10112 ◽  
Author(s):  
Shichang Li ◽  
Bingyun Ao ◽  
Xiaoqiu Ye ◽  
Ruizhi Qiu ◽  
Tao Gao

2021 ◽  
Author(s):  
Thi Nga Do ◽  
Son-Tung Nguyen ◽  
Khang Pham

In this work, by means of the first-principles calculations, we investigate the structural and electronic properties of a two-dimensional ZnGeN2 monolayer as well as the effects of strains and electric...


RSC Advances ◽  
2018 ◽  
Vol 8 (45) ◽  
pp. 25534-25545 ◽  
Author(s):  
Joohwi Lee ◽  
Nobuko Ohba ◽  
Ryoji Asahi

Search for crystal structures of ZrO2 with higher oxygen-ion conductivity by evolutionary algorithms, first-principles calculations, and regression analysis.


2016 ◽  
Vol 94 (13) ◽  
Author(s):  
Yongliang Guo ◽  
Changying Wang ◽  
Wujie Qiu ◽  
Xuezhi Ke ◽  
Ping Huai ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (32) ◽  
pp. 27136-27142 ◽  
Author(s):  
Xurui Li ◽  
Junyong Wang ◽  
Jinzhong Zhang ◽  
Yawei Li ◽  
Zhigao Hu ◽  
...  

The temperature-dependent phonon spectra and magnetoresistance of CuCr1−xMgxO2 films have been studied, combined with first-principles calculations.


2019 ◽  
Vol 21 (40) ◽  
pp. 22647-22653 ◽  
Author(s):  
Georgy V. Pushkarev ◽  
Vladimir G. Mazurenko ◽  
Vladimir V. Mazurenko ◽  
Danil W. Boukhvalov

First principles calculations of the magnetic and electronic properties of VSe2 describing the transition between two structural phases (H,T) were performed.


Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4945
Author(s):  
Li-Hua Qu ◽  
Xiao-Long Fu ◽  
Chong-Gui Zhong ◽  
Peng-Xia Zhou ◽  
Jian-Min Zhang

We report first-principles calculations on the structural, mechanical, and electronic properties of O2 molecule adsorption on different graphenes (including pristine graphene (G–O2), N(nitrogen)/B(boron)-doped graphene (G–N/B–O2), and defective graphene (G–D–O2)) under equibiaxial strain. Our calculation results reveal that G–D–O2 possesses the highest binding energy, indicating that it owns the highest stability. Moreover, the stabilities of the four structures are enhanced enormously by the compressive strain larger than 2%. In addition, the band gaps of G–O2 and G–D–O2 exhibit direct and indirect transitions. Our work aims to control the graphene-based structure and electronic properties via strain engineering, which will provide implications for the application of new elastic semiconductor devices.


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