Induced half-metallic characteristic and enhanced magnetic anisotropy in two-dimensional Janus V2I3Br3 monolayer by adsorbing graphyne

Author(s):  
Nan Sun ◽  
Xiaocha Wang ◽  
Wenbo Mi

The recent emergence of two-dimensional (2D) Janus materials opens a new avenue of spintronics and optoelectronic applications. However, 2D magnetic Janus materials and Janus monolayer based magnetic heterostructures are yet...

2019 ◽  
Vol 21 (13) ◽  
pp. 6984-6990 ◽  
Author(s):  
Kai Nie ◽  
Xiaocha Wang ◽  
Wenbo Mi

The electronic structure and magnetic anisotropy of a 2D SnO/CrN heterostructure can be tailored by strains and interlayer distances.


Nanoscale ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 4204-4209 ◽  
Author(s):  
Bing Wang ◽  
Yehui Zhang ◽  
Liang Ma ◽  
Qisheng Wu ◽  
Yilv Guo ◽  
...  

MnX (X = P, As) monolayers: room-temperature ferromagnetic half-metallicity and sizable magnetic anisotropy.


2017 ◽  
Vol 8 (4) ◽  
pp. 2859-2867 ◽  
Author(s):  
Wenbin Li ◽  
Lei Sun ◽  
Jingshan Qi ◽  
Pablo Jarillo-Herrero ◽  
Mircea Dincă ◽  
...  

Simulations demonstrate the critical roles of π-conjugation and large magnetic anisotropy in realizing high-temperature ferromagnetic 2D metal–organic framework, which is also half-metallic.


Author(s):  
Muhammad Yar Khan ◽  
Yan Liu ◽  
Tao Wang ◽  
Hu Long ◽  
Miaogen Chen ◽  
...  

AbstractMonolayer MnCX3 metal–carbon trichalcogenides have been investigated by using the first-principle calculations. The compounds show half-metallic ferromagnetic characters. Our results reveal that their electronic and magnetic properties can be altered by applying uniaxial or biaxial strain. By tuning the strength of the external strain, the electronic bandgap and magnetic ordering of the compounds change and result in a phase transition from the half-metallic to the semiconducting phase. Furthermore, the vibrational and thermodynamic stability of the two-dimensional structure has been verified by calculating the phonon dispersion and molecular dynamics. Our study paves guidance for the potential applications of these two mono-layers in the future for spintronics and straintronics devices.


Nanoscale ◽  
2021 ◽  
Author(s):  
Hanpu Liang ◽  
Yifeng Duan

GaN-ZnO alloys are more promising semiconductors than their counterparts for optoelectronic applications due to the abrupt red shift in the visible-light range. Unfortunately, the strong internal electrostatic field (IEF) seriously...


Author(s):  
Prasanna Dnyaneshwar Patil ◽  
Milinda Wasala ◽  
Rana Alkhaldi ◽  
Lincoln Weber ◽  
Kiran Kumar Kovi ◽  
...  

A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High...


2015 ◽  
Vol 107 (23) ◽  
pp. 232402 ◽  
Author(s):  
G. N. Kakazei ◽  
X. M. Liu ◽  
J. Ding ◽  
V. O. Golub ◽  
O. Y. Salyuk ◽  
...  

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