Giant tunneling electroresistance arising from reversible partial metallization of barrier in NaTiO3/BaTiO3/LaTiO3 ferroelectric tunnel junction

2021 ◽  
Author(s):  
Wei Xiao ◽  
Lili Kang ◽  
Hua Hao ◽  
Yan-hong Zhou ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Ferroelectric Polarization ◽  
Polarization Reversal ◽  
Ferroelectric Tunnel Junction ◽  
Tunneling Resistance

Tunneling electroresistance (TER) is the change in tunneling resistance induced by ferroelectric polarization reversal in ferroelectric tunnel junctions (FTJs) and how to achieve a giant TER has always been a...

Comprehensive and Accurate Analysis of Working Principle in Ferroelectric Tunnel Junction Using Low-frequency Noise Spectroscopy

Nanoscale ◽  
2021 ◽  
Author(s):  
Wonjun Shin ◽  
Kyung Kyu Min ◽  
Jong-Ho Bae ◽  
Jiyong Yim ◽  
Dongseok Kwon ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Accurate Analysis ◽  
Noise Spectroscopy ◽  
Emerging Memory ◽  
Working Principle ◽  
Ferroelectric Tunnel Junction

Recently, ferroelectric tunnel junctions (FTJs) have gained extensive attention as possible candidates for emerging memory and synaptic devices for neuromorphic computing. However, the working principles of the FTJ remain controversial...

First-principle study of CO adsorption influence on the properties of ferroelectric tunnel junctions

2016 ◽  
Vol 18 (45) ◽  
pp. 31115-31124
Author(s):  
H. F. Li ◽  
W. J. Chen ◽  
Yue Zheng
Keyword(s):  
Tunnel Junction ◽  
Electrode Surface ◽  
Tunnel Junctions ◽  
Co Adsorption ◽  
First Principle ◽  
Adsorption Effects ◽  
Ferroelectric Tunnel Junction

For nanoscale Pt–BTO–Pt ferroelectric tunnel junction with CO molecules adsorbed on the top electrode surface, we found that the electrode does not completely shield the adsorption effects, and a series of interesting changes in the properties of the tunnel junction have arisen.

scholarly journals Tunneling anomalous Hall effect in a ferroelectric tunnel junction

2018 ◽  
Vol 113 (17) ◽  
pp. 172405 ◽  
Author(s):  
M. Ye. Zhuravlev ◽  
Artem Alexandrov ◽  
L. L. Tao ◽  
Evgeny Y. Tsymbal
Keyword(s):  
Hall Effect ◽  
Tunnel Junction ◽  
Anomalous Hall Effect ◽  
Ferroelectric Tunnel Junction

scholarly journals Two-Dimensional Ferroelectric Tunnel Junction: The Case of Monolayer In:SnSe/SnSe/Sb:SnSe Homostructure

2019 ◽  
Vol 1 (7) ◽  
pp. 1133-1140 ◽  
Author(s):  
Xin-Wei Shen ◽  
Yue-Wen Fang ◽  
Bo-Bo Tian ◽  
Chun-Gang Duan
Keyword(s):  
Tunnel Junction ◽  
Two Dimensional ◽  
Ferroelectric Tunnel Junction

Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940012
Author(s):  
Zane Jamal-Eddine ◽  
Yuewei Zhang ◽  
Siddharth Rajan
Keyword(s):  
Tunnel Junction ◽  
Recent Progress ◽  
Tunnel Junctions ◽  
Optoelectronic Devices ◽  
Material System ◽  
Novel Device ◽  
Unique Material ◽  
Material Systems ◽  
Device Applications ◽  
Commercial Device

Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

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