Intermediate occupation numbers for 5f electrons in a Pu and U mixed oxide

2021 ◽  
Author(s):  
Ru-song Li ◽  
Zheng Xie ◽  
Ling-yun Kong ◽  
Su-xia Hou ◽  
Ji-jun Luo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Mixed Oxide ◽  
First Principles ◽  
Correlation Effect ◽  
First Principles Calculation ◽  
Occupation Numbers ◽  
5F Electrons

In order to reveal correlation effect on the electronic properties in particular 5f occupation of Pu/U ions in a (Pu,U) mixed oxide-PuUO4, a first principles calculation is performed by using...

A First-Principles Calculation of Electronic Properties of LiNH2 and NaNH2

2018 ◽  
Vol 59 (6) ◽  
pp. 1251-1257
Author(s):  
E. B. Kaizer ◽  
N. G. Kravchenko ◽  
A. S. Poplavnoi
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
First Principles Calculation

scholarly journals Structural and Electronic Properties of Orthorhombic Phase Bi2Se3 Based On First-Principles Study

2019 ◽  
Vol 16 (2) ◽  
pp. 77 ◽  
Author(s):  
Muhammad Zamir Mohyedin ◽  
Afiq Radzwan ◽  
Mohammad Fariz Mohamad Taib ◽  
Rosnah Zakaria ◽  
Nor Kartini Jaafar ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Density Functional ◽  
Local Density ◽  
Computer Code ◽  
First Principles Calculation ◽  
Generalized Gradient ◽  
Exchange Correlation ◽  
Percentage Difference ◽  
Structural And Electronic Properties

Bi2Se3 is one of the promising materials in thermoelectric devices and very useful out of environmental concern due to its efficiency to perform at room temperature. Based on the first-principles calculation of density functional theory (DFT) by using CASTEP computer code, structural and electronic properties of Bi2Se3 were investigated. The calculation is conducted within the exchange-correlation of local density approximation (LDA) and generalized gradient approximation within the revision of Perdew-Burke-Ernzerhof (GGA-PBE) functional. It was found that the results are consistent with previous works of theoretical study with small percentage difference. LDA exchange-correlation functional method is more accurate and have a better agreement than GGA-PBE to describe the structural properties of Bi2Se3 which consist of lattice parameters. LDA functional also shown more accurate electronic structure of Bi2Se3 that consist of band structure and density of states (DOS) which consistent with most previous theoretical works with small percentage difference. This study proves the reliability of CASTEP computer code and show LDA exchange-correlation functional is more accurate in describing the nature of Bi2Se3 compared to the other functionals.

First Principles Calculation of Ground State and Electronic Properties of C and Si

1987 ◽  
Vol 35 (5) ◽  
pp. 706-709 ◽  
Author(s):  
P E van Camp ◽  
V E van Doren ◽  
J T Devreese
Keyword(s):  
Electronic Properties ◽  
Ground State ◽  
First Principles ◽  
First Principles Calculation

First Principles Calculation on Adsorption of S on Impurity Fe (100)

2012 ◽  
Vol 472-475 ◽  
pp. 1538-1543
Author(s):  
Qiang Luo ◽  
Zhi Zhang ◽  
Qiang Zhang ◽  
Tai He Shi ◽  
Zeng Ling Ran
Keyword(s):  
Electronic Properties ◽  
Density Function ◽  
Molecular Orbital ◽  
Adsorption Energy ◽  
First Principles ◽  
Function Theory ◽  
Density Function Theory ◽  
First Principles Calculation ◽  
Generalized Gradient ◽  
Generalized Gradient Approximation

Using the first principles method, which is based on the density function theory (DFT), the structures and electronic properties of S atoms are adsorbed on the Fe (100) surface for X(X is Cr, Ni, Mo, C, Mn ,Si,P and S) impurities in Fe, and their molecular orbital and absorption energies were calculated with the generalized gradient approximation. The results show that S adsorbed on H site for Cr, Ni, Mn, C and Mo impurities in Fe is stable but for Si, S and P is B site. The adsorption energy for Ni in impurity Fe is almost nearby for the purity Fe and the effect for Ni in S absorption on Fe (100) surface is very small. In order to prevent S absorption on Fe surface，we can reduce the percentage of Ni.

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