Interfacial Engineering of Mo/Hf0.3Zr0.7O2/Si Capacitor Using Direct Scavenging Effect of Thin Ti layer
Keyword(s):
An antiferroelectric Mo/Hf0.3Zr0.7O2/SIOx/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO2 layer, and the endurance...
Keyword(s):
2003 ◽
Vol 32
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pp. 115-118
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2012 ◽
2019 ◽
Vol 9
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pp. 238-243
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2012 ◽
Vol 28
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pp. 1-5
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