scholarly journals A mechanism for ageing in a deeply supercooled molecular glass

2021 ◽  
Author(s):  
Andrew Cassidy ◽  
Mads Ry Vogel Jørgensen ◽  
Artur Glavic ◽  
Valeria Lauter ◽  
Oksana Plekan ◽  
...  
Keyword(s):  
Electric Fields ◽  
Energy Barrier ◽  
Methyl Formate ◽  
Secondary Relaxation ◽  
Molecular Glass ◽  
Direct Measurements ◽  
Deposited Films

Measurements of the decay of electric fields, formed spontaneously within vapour-deposited films of cis-methyl formate, provide the first direct measurements of the energy barrier to secondary relaxation mechanisms in a...

Spontaneous electric fields in films of cis-methyl formate

2012 ◽  
Vol 14 (28) ◽  
pp. 9972 ◽  
Author(s):  
Oksana Plekan ◽  
Andrew Cassidy ◽  
Richard Balog ◽  
Nykola C. Jones ◽  
David Field
Keyword(s):  
Electric Fields ◽  
Methyl Formate

Direct measurements of dislocation charges in Ca2+‐doped KC1 by using large electric fields

1984 ◽  
Vol 49 (3) ◽  
pp. 395-407 ◽  
Author(s):  
Toshihiko Kataoka ◽  
Luigi Colombo ◽  
J. C. M. Li
Keyword(s):  
Electric Fields ◽  
Direct Measurements

scholarly journals Direct Measurements of Electric Fields in Weak Hydrogen Bonds

2012 ◽  
Vol 102 (3) ◽  
pp. 269a ◽  
Author(s):  
Miguel Saggu ◽  
Nicholas M. Levinson ◽  
Steven G. Boxer
Keyword(s):  
Hydrogen Bonds ◽  
Electric Fields ◽  
Direct Measurements ◽  
Weak Hydrogen Bonds

Measuring the interface stress: Silver/nickel interfaces

1999 ◽  
Vol 14 (11) ◽  
pp. 4358-4365 ◽  
Author(s):  
D. Josell ◽  
J. E. Bonevich ◽  
I. Shao ◽  
R. C. Cammarata
Keyword(s):  
Interface Stress ◽  
Bilayer Thickness ◽  
Surface Thermodynamics ◽  
X Ray Diffraction ◽  
Multilayered Thin Film ◽  
X Ray ◽  
Direct Measurements ◽  
Volume Stress ◽  
Deposited Films ◽  
Elastic Strains

Interface stress is a surface thermodynamics quantity associated with the reversible work of elastically straining an internal solid interface. In a multilayered thin film, the combined effect of the interface stress of each interface results in an in-plane biaxial volume stress acting within the layers of the film that is inversely proportional to the bilayer thickness. We calculated the interface stress of an interface between {111} textured Ag and Ni on the basis of direct measurements of the dependence of the in-plane elastic strains on the bilayer thickness. The strains were obtained using transmission x-ray diffraction. Unlike previous studies of this type, we used freestanding films so that there was no need to correct for intrinsic stresses resulting from forces applied by the substrate that can lead to large uncertainties of the calculated interface stress value. Based on the lattice parameters of the bulk, pure elements, an interface stress of −2.02 ± 0.26 N/m was calculated using the x-ray diffraction results from films with bilayer thicknesses greater than 5 nm. This value is somewhat smaller than previous measurements obtained from as-deposited films supported by substrates. For smaller bilayer thicknesses the apparent interface stress becomes smaller in magnitude, possibly due to a loss of layering in the specimens.

scholarly journals Noninvasive Measurement of Conductivity Anisotropy at Larmor Frequency Using MRI

2013 ◽  
Vol 2013 ◽  
pp. 1-12 ◽  
Author(s):  
Joonsung Lee ◽  
Yizhuang Song ◽  
Narae Choi ◽  
Sungmin Cho ◽  
Jin Keun Seo ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Current Density ◽  
Partial Information ◽  
Larmor Frequency ◽  
Biological Tissues ◽  
Conductivity Tensor ◽  
Conductivity Anisotropy ◽  
Circulating Current ◽  
Direct Measurements

Anisotropic electrical properties can be found in biological tissues such as muscles and nerves. Conductivity tensor is a simplified model to express the effective electrical anisotropic information and depends on the imaging resolution. The determination of the conductivity tensor should be based on Ohm's law. In other words, the measurement of partial information of current density and the electric fields should be made. Since the direct measurements of the electric field and the current density are difficult, we use MRI to measure their partial information such as B1 map; it measures circulating current density and circulating electric field. In this work, the ratio of the two circulating fields, termed circulating admittivity, is proposed as measures of the conductivity anisotropy at Larmor frequency. Given eigenvectors of the conductivity tensor, quantitative measurement of the eigenvalues can be achieved from circulating admittivity for special tissue models. Without eigenvectors, qualitative information of anisotropy still can be acquired from circulating admittivity. The limitation of the circulating admittivity is that at least two components of the magnetic fields should be measured to capture anisotropic information.

Influence of Deposition Conditions on the optical and Electronic Properties of a-Ge:H

1991 ◽  
Vol 219 ◽  
Author(s):  
W. Paul ◽  
S. J. Jones ◽  
F. C. Marques ◽  
D. Pang ◽  
W. A. Turner ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Electric Fields ◽  
Current Data ◽  
Optical Absorption Edge ◽  
Photoluminescence Spectra ◽  
Full Account ◽  
Optical And Electronic Properties ◽  
Self Consistent ◽  
Deposited Films ◽  
Deposition Conditions

ABSTRACTWe have measured the optical absorption edge spectra for absorption coefficients between 1 and 105 cm-1, the photoluminescence spectra at 77 K, the conductivity-temperature relations, and the photoconductivity magnitude and spectral dependence for a series of r.f. glow discharge films of a-Ge:H. The films were deposited at the powered cathode and unpowered anode of a diode capacitive reactor having very different electric fields and plasma conditions, while substrate temperature, H2 dilution of a GeH4 plasma and applied r.f. power were varied. The structure of the films are radically different, with the anode-deposited films displaying a microstructure of low density material (voids) and the cathode-deposited films displaying homogeneity similar to that of device-quality a-Si:H. A self consistent explanation of the differences in measured optical and electronic properties is given, taking full account of the structural observations. From this analysis the conditions required for the production of a-Ge:H of good photoelectronic quality may be inferred. Preliminary structural, optical and photoelectronic data for a-Si1.x Gex :H of large x, prepared under conditions extrapolated from the a-Ge study, indicate significant improvements from current data in the literature.

scholarly journals Direct Measurements of Electric Fields in Weak OH···π Hydrogen Bonds

2011 ◽  
Vol 133 (43) ◽  
pp. 17414-17419 ◽  
Author(s):  
Miguel Saggu ◽  
Nicholas M. Levinson ◽  
Steven G. Boxer
Keyword(s):  
Hydrogen Bonds ◽  
Electric Fields ◽  
Direct Measurements
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