Novel Cu-Mg-Ni-Zn-Mn Oxide Thin Film Electrodes for NIR Photodetector Applications

2021 ◽  
Author(s):  
Tzu-Hsuan Wang ◽  
Chia-Tung Kuo ◽  
Pin-Hung Chung ◽  
Chao-I Liu ◽  
You-Yan Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Mn Oxide ◽  
Post Annealing ◽  
Narrow Bandgap ◽  
Thin Film Electrodes

This study reports the optical and photoconductive characteristics of the Cu-Mg-Ni-Zn-Mn oxide thin films with and without post-annealing in air. The Cu-Mg-Ni-Zn-Mn oxide thin films reveal a narrow bandgap of...

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Indium Oxide Thin Film

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.

Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 8964-8970 ◽  
Author(s):  
Chiharu Kura ◽  
Yoshitaka Aoki ◽  
Etsushi Tsuji ◽  
Hiroki Habazaki ◽  
Manfred Martin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Valence State ◽  
Gallium Oxide ◽  
Oxygen Deficiency ◽  
Oxide Thin Film ◽  
Oxide Thin Films

Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.

Gas-Sensing Property Evaluation of Reactively Sputtered Chromium Oxide Thin Films

2008 ◽  
Vol 55-57 ◽  
pp. 285-288 ◽  
Author(s):  
C. Oros ◽  
Anurat Wisitsoraat ◽  
Pichet Limsuwan ◽  
M. Horpathum ◽  
V. Patthanasettakul ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Chromium Oxide ◽  
Flow Rate ◽  
Gas Sensing ◽  
Oxygen Flow Rate ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Sensing Applications

Metal oxide thin film materials, including SnO2, TiO2, WO3, MoO3, ZnO, have been widely studied for gas sensing applications. However, new gas-sensing materials with distinct and diverse characteristics for new sensing applications such as electronic nose are still being explored. Presently, gas sensing properties of other metal oxides have not yet been extensively explored. Chromium oxide is an interesting metal oxide for gas sensor because of its temperature stability and moderate electrical conductivity. Nevertheless, there have been very few studies on gas sensing behaviors of this material. In this work, chromium oxide thin films were systematically studied by reactive sputtering with varying sputtering parameter including oxygen flow rate. Structural characterization by means of scanning electron microscopy and X-ray diffraction reveals that the films have sub-micometer grain-size with Rhombohedral phase of Cr2O3. Gas-sensing performances of sputtered chromium oxide thin film have been characterized toward ethanol and acetylene sensing. It was found that chromium oxide thin films exhibit p-type conductivity with increased resistance when exposed to ethanol and acetylene, which are reducing gases. In addition, sensitivity to both acetylene and ethanol tend to improve as oxygen flow rate increases. Furthermore, the chromium oxide thin films exhibit high sensitivity at moderate temperature of 250-300 °C with minimum operating temperature of 200 °C.

Defect engineering in perovskite oxide thin films

2021 ◽  
Author(s):  
Yunlong Sun ◽  
Jack Yang ◽  
Danyang Wang ◽  
Sean Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Multifunctional Materials ◽  
Defect Engineering ◽  
Oxide Thin Films ◽  
Photovoltaic Properties ◽  
Microelectronic Devices ◽  
Perovskite Oxide Thin Films

Perovskite oxide thin film is a category of multifunctional materials that have intriguing electrical, magnetic, and photovoltaic properties that can be harnessed combinatorially in future microelectronic devices. However, the inevitable...

Influence of Post-Deposition Annealing on Structure and Optical Characteristics of Niobium Oxide Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 245-248
Author(s):  
Wichan Lertlop ◽  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Niobium Oxide ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
Post Annealing ◽  
Structure And Microstructure ◽  
Post Deposition

In this work, niobium oxide thin films were deposited on silicon wafer (100) and glass slide substrate by reactive magnetron sputtering. The niobium oxide films were further annealed and effect of post annealing on the crystallinity, microstructure and optical properties was studies. In order to identify the crystalline structure and microstructure, X-ray diffraction (XRD) and scanning electron microscope (SEM) measurement carried out. The optical property was determined by UV-Vis spectrophotometer. It has been observed that with increase in annealing temperature films become microcrystalline films. In particularly, the optical property of niobium oxide thin film also improves with annealing temperature.

scholarly journals Structural and tribological properties of tungsten oxide thin film on a silicon substrate

2020 ◽  
Vol 44 (11-12) ◽  
pp. 744-749
Author(s):  
Siamak Ziakhodadadian ◽  
Tianhui Ren
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Tungsten Oxide Thin Films ◽  
Scanning Electron

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

scholarly journals Using Flame-Assisted Printing to Fabricate Large Nanostructured Oxide Thin Film for Electrochromic Applications

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Hualin Fan ◽  
Wei Yan ◽  
Yicheng Ding ◽  
Zhihao Bao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Bismuth Oxide ◽  
Oxide Thin Film ◽  
Flame Spray ◽  
Electrochromic Property ◽  
Oxide Thin Films ◽  
Large Area ◽  
High Modulation ◽  
Nanostructured Oxide

AbstractFlame spray pyrolysis was a process to produce oxide nanoparticles in a self-sustaining flame. When the produced nanoparticles were deposited on a substrate, nanostructured oxide thin films could be obtained. However, the size of the thin film was usually limited by the fixed substrate. Here, we demonstrated that thin film with a large area could be deposited by using the moving substrate, which was precisely controlled by servo motors. As a result, the flame tip could scan over the substrate and deposit the nanoparticles on it line by line, analogues to a printing process called flame-assisted printing (FAP). As an example, nanostructured bismuth-oxide thin films with a size of up to 20 cm × 20 cm were deposited with the FAP process. The bismuth-oxide thin film exhibited a stable electrochromic property with a high modulation of 70.5%. The excellent performance could be ascribed to its porous nanostructure formed in the FAP process. The process can be extended to deposit other various oxides (e.g., tungsten-oxide) thin films with a large size for versatile applications.

Atomic Scale Control of Epitaxial Growth and Interface in Oxide Thin Films for Advanced Oxide Lattice Engineering

1995 ◽  
Vol 401 ◽  
Author(s):  
M. Yoshimoto ◽  
T. Maeda ◽  
T. Ohnishi ◽  
G. H. Lee ◽  
H. Koinuma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Molecular Layer ◽  
Atomic Scale ◽  
In Situ Monitoring ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Thin Film Technology

AbstractAdvanced thin film technology based on laser MBE has enabled us to control the molecular layer-by-layer epitaxial growth and interface structure of oxide thin films in an atomic scale. Molecular layer epitaxy of oxide thin film growth was verified from in situ monitoring of intensity oscillation in reflection high energy electron diffraction (RHEED). Advanced oxide thin film technology was applied to form oxide superlattices for quantum functional oxides and to achieve lattice-matched heteroepitaxy in oxide films on silicon substrate for all epitaxial oxide/silicon hybrid devices. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of growth process using RHEED but also atomic regulation of the substrate surface by atomic force microscopy and ion scattering spectroscopy.

Electrochemical Ceramic Device for Hydrogen-Phosphate Ion Sensor

2006 ◽  
Vol 45 ◽  
pp. 1792-1798
Author(s):  
Youichi Shimizu ◽  
Satoko Takase ◽  
Mariko Yoshida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Hydrogen Phosphate ◽  
Oxide Thin Films ◽  
Phosphate Ion ◽  
Perovskite Type Oxide ◽  
Gel Processing ◽  
Perovskite Type

Novel sol-gel processing techniques of ceramic materials were developed for designing new functional environmental ion sensors. Wet-chemical preparation methods for metal-oxide thin-films, perovskite-type oxide thin-films, and solid-electrolyte discs could be developed by using solution techniques based on polymer precursors, etc. New electrochemical sensing techniques to hydrogen-phosphate ion with high sensitivity and selectivity were developed by the use of ceramic-based sensors. A sol-gel processing technique was developed for the preparation of La-based perovskite-type oxide thin-films using an acetylacetone (AcAc)-modified poly(vinyl alcohol) (PVA)-based polymeric precursor method. The AcAc modified PVA-based sol made it possible to deposit a thin-film as well as to lower the sintering temperatures. The La0.8Sr0.2CoO3 perovskite-type oxide thin-film electrode prepared at 500°C showed good properties of amperometric sensing to hydrogen-phosphate ion. A new solid-electrolyte ion sensor device using a Na+-ion conductor (Na5DySi4O12: NaDyCON) as an impedancemetric transducer and a perovskite-type oxide thin-film as a receptor has been further developed. The AC impedance of the device with a LaCoO3 receptor was found to vary logarithmically with increasing K2HPO4 concentration between 1.0 x 10-5 and 1.0 x 10-2 M at 10 kHz. The 90% response time was ca. 2 min at room temperature. The sensor showed a little sensitivity to NO3- at higher concentration, while no response was observed to the examined anions of Cl- and ClO4-.

Study on Preparation of Nano-Sized Iron Oxide Thin Films and its Modification

2013 ◽  
Vol 750-752 ◽  
pp. 1945-1948
Author(s):  
Yan Zhu ◽  
Jing Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Iron Oxide ◽  
Ferric Oxide ◽  
Convex Surface ◽  
Sol Gel ◽  
Dip Coating ◽  
Bismuth Nitrate ◽  
Oxide Thin Film ◽  
Oxide Thin Films

Nano iron oxide thin films were prepared by both citric acid sol-gel and dip-coating method. The modifications of nano ferric oxide thin film materials were carried out by using PEG and bismuth nitrate . Both nano ferric oxide thin film materials prepared and the modified were characterized by SEM, XRD. It is indicated that that modification of wether PEG or bismuth nitrate to the thin film can reduce the convex surface and the thin film surfaces are more uniform.

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