scholarly journals Transformation of Co3O4 Nanoparticles to CoO Monitored by In-Situ TEM and Predicted Ferromagnetism at the Co3O4/CoO Interface from First Principles

2021 ◽  
Author(s):  
Xiaodan Chen ◽  
Heleen van Gog ◽  
Marijn A. van Huis
Keyword(s):  
Magnetic Properties ◽  
First Principles ◽  
Chemical Properties ◽  
In Situ Tem ◽  
Co3o4 Nanoparticles ◽  
Battery Materials

Nanoparticles of Co3O4 and CoO are of paramount importance because of their chemical properties propelling their applications in catalysis and battery materials, and because of their intriguing magnetic properties. Here...

Electrical, Optical and Ionic Probe inside Transmission Electron Microscope

2013 ◽  
Vol 1525 ◽  
Author(s):  
Xuedong Bai ◽  
Zhi Xu ◽  
Peng Gao ◽  
Kaihui Liu ◽  
Wenlong Wang ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Chemical Properties ◽  
Atomic Scale ◽  
In Situ Tem ◽  
Physical And Chemical Properties ◽  
Transmission Electron ◽  
Tem Method ◽  
Physical And Chemical ◽  
And Chemical Properties

ABSTRACTIn-situ transmission electron microscopy (TEM) method is powerful in a way that it can directly correlate the atomic-scale structure with physical and chemical properties. We will report on the construction and applications of the homemade in-situ TEM electrical and optical holders. Electrical transport of carbon nanotubes and photoconducting response on bending of individual ZnO nanowires have been studied inside TEM. Oxygen vacancy electromigration and its induced resistance switching effect have been probed in CeO2 films.

Structure and Magnetic Properties of Nanocrystalline Pd-Co and Pd-Co-Fe Layers

2007 ◽  
Vol 124-126 ◽  
pp. 907-910 ◽  
Author(s):  
András Kovács ◽  
Kazuhisa Sato ◽  
Yoshihiko Hirotsu
Keyword(s):  
Magnetic Properties ◽  
Quantum Interference ◽  
Alloy Formation ◽  
In Situ Tem ◽  
Superconducting Quantum Interference Device ◽  
Transmission Electron ◽  
Co Nanoparticles ◽  
Feco Nanoparticles ◽  
Fe Addition

The structure and magnetic properties of sequentially deposited Pd-Co and Pd-Co- Fe nanocrystals have been investigated by transmission electron microscopy (TEM) and superconducting quantum interference device magnetometer. The fcc structured PdCo alloy formation was found in binary Pd-Co nanostructured samples analysed by in situ TEM annealing. In ternary sample, the addition of Fe to Pd-Co resulted in a complex of Pd and FeCo nanoparticles. In situ TEM annealing of the ternary sample lead to the formation of L10 ordered phase. It was found that the magnetic properties of the nanoparticles were improved by Fe addition to the Pd-Co nanoparticles.

scholarly journals In-Situ TEM Study of Phase Evolution in Individual Battery Materials

2017 ◽  
Vol 23 (S1) ◽  
pp. 2008-2009
Author(s):  
Khim Karki ◽  
Hanlei Zhang ◽  
Yiqing Huang ◽  
M. Stanley Whittingham ◽  
Eric A. Stach ◽  
...  
Keyword(s):  
Phase Evolution ◽  
In Situ Tem ◽  
Battery Materials

scholarly journals In-situ TEM experiments and first-principles studies on the electrochemical and mechanical behaviors of α-MoO3 in Li-ion batteries

Nano Energy ◽  
2016 ◽  
Vol 27 ◽  
pp. 95-102 ◽  
Author(s):  
Yonghe Li ◽  
Hong Sun ◽  
Xiaopeng Cheng ◽  
Yuefei Zhang ◽  
Kejie Zhao
Keyword(s):  
First Principles ◽  
In Situ Tem ◽  
Li Ion Batteries ◽  
Mechanical Behaviors ◽  
Li Ion

Cathodoluminescence of Catalyst Crystallites

1982 ◽  
Vol 40 ◽  
pp. 664-665
Author(s):  
E.D. Boyes ◽  
P.L. Gai ◽  
D.B. Darby ◽  
C. Warwick
Keyword(s):  
Defect Density ◽  
Chemical Properties ◽  
Operating Conditions ◽  
Semiconductor Materials ◽  
Environmental Cell ◽  
High Resolution Structure ◽  
Commercially Important ◽  
Crystallographic Defects ◽  
Resolution Structure

The extended crystallographic defects introduced into some oxide catalysts under operating conditions may be a consequence and accommodation of the changes produced by the catalytic activity, rather than always being the origin of the reactivity. Operation without such defects has been established for the commercially important tellurium molybdate system. in addition it is clear that the point defect density and the electronic structure can both have a significant influence on the chemical properties and hence on the effectiveness (activity and selectivity) of the material as a catalyst. SEM/probe techniques more commonly applied to semiconductor materials, have been investigated to supplement the information obtained from in-situ environmental cell HVEM, ultra-high resolution structure imaging and more conventional AEM and EPMA chemical microanalysis.

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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