Hydrogen doping in wide-bandgap amorphous In–Ga–O semiconductors
Keyword(s):
Microscopic mechanisms of the formation of H defects and their role in passivation of under-coordinated atoms, short- and long-range structural transformations, and the resulting electronic properties of amorphous In–Ga–O with In : Ga = 6 : 4 are investigated using computationally-intensive ab initio molecular dynamics simulations and accurate density-functional calculations.
2000 ◽
Vol 8
(3)
◽
pp. 223-229
◽
2020 ◽
Vol 22
(8)
◽
pp. 4626-4631
◽
2020 ◽
Vol 1180
◽
pp. 112821
2018 ◽
Vol 20
(36)
◽
pp. 23717-23725
◽
2010 ◽
Vol 114
(2)
◽
pp. 1180-1190
◽
2021 ◽
1996 ◽
Vol 255
(1-3)
◽
pp. 187-194
◽
2001 ◽
Vol 115
(23)
◽
pp. 10808-10813
◽