The post-treatment effects on open circuit voltages and device performances in a high efficiency all-small-molecule organic solar cell

2020 ◽  
Vol 8 (43) ◽  
pp. 15385-15392
Author(s):  
Ziqi Zhang ◽  
Qiong Wu ◽  
Dan Deng ◽  
Sihua Wu ◽  
Rui Sun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Small Molecule ◽  
Organic Solar Cell ◽  
Treatment Effects ◽  
High Efficiency ◽  
Open Circuit ◽  
Post Treatment ◽  
Open Circuit Voltages

Post-treatment effects on open circuit voltages and device performances in a novel high efficiency all-small-molecule OSC were deeply investigated.

An Improved Triple-Tandem Organic Solar Cell

2009 ◽  
Vol 1212 ◽  
Author(s):  
Dewei Zhao ◽  
Xiao Wei Sun ◽  
Lin Ke ◽  
Swee Tiam Tan
Keyword(s):  
Solar Cell ◽  
Small Molecule ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Solar Irradiation ◽  
The Third

AbstractWe present an efficient polymer-small molecule triple-tandem organic solar cell (OSC), consisting of poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM) bulk heterojunction as the first and second cells, and small molecules copper phthalocyanine (CuPc) and fullerene (C60) as the third cell on top. These sub-cells are connected by an intermediate layer of Al(1 nm)/MoO3(15 nm), which appears to be highly transparent, structurally smooth, and electrically functional. Compared to our previous all polymer triple-tandem organic solar cells (2.03%), this polymer-small molecule triple-tandem organic solar cell achieves an improved power conversion efficiency of 2.18% with a short-circuit current density (Jsc) = 3.02 mA/cm2, open-circuit voltage (Voc) = 1.51 V, and fill factor (FF) = 47.7% under simulated solar irradiation of 100 mW/cm2 (AM1.5G), which can be attributed to the increased photocurrent generation in the third cell since the third cell has the complementary absorption with two bottom cells despite a slightly reduced Voc.

An all-small-molecule organic solar cell derived from naphthalimide for solution-processed high-efficiency nonfullerene acceptors

2019 ◽  
Vol 7 (3) ◽  
pp. 709-717 ◽  
Author(s):  
B. Yadagiri ◽  
K. Narayanaswamy ◽  
Srikanth Revoju ◽  
Bertil Eliasson ◽  
Ganesh D. Sharma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Small Molecules ◽  
Small Molecule ◽  
Organic Solar Cell ◽  
High Efficiency ◽  
Solution Processed

Two small molecules BYG-1 and BYG-2 with fluorene donor and benzothiadiazole acceptor units connected to the terminal naphthamide group via ethyne linker were designed and synthesized.

An All-Small-Molecule Organic Solar Cell with High Efficiency Nonfullerene Acceptor

2015 ◽  
Vol 27 (11) ◽  
pp. 1951-1956 ◽  
Author(s):  
Oh Kyu Kwon ◽  
Jung-Hwa Park ◽  
Dong Won Kim ◽  
Sang Kyu Park ◽  
Soo Young Park
Keyword(s):  
Solar Cell ◽  
Small Molecule ◽  
Organic Solar Cell ◽  
High Efficiency ◽  
Nonfullerene Acceptor

scholarly journals A solution-processed high performance organic solar cell using a small molecule with the thieno[3,2-b]thiophene central unit

2015 ◽  
Vol 51 (83) ◽  
pp. 15268-15271 ◽  
Author(s):  
Qian Zhang ◽  
Yunchuang Wang ◽  
Bin Kan ◽  
Xiangjian Wan ◽  
Feng Liu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Small Molecule ◽  
Organic Solar Cell ◽  
High Performance ◽  
High Efficiency ◽  
Central Unit ◽  
Solution Processed

Replacing the double thiophene unit of DRCN8T with thieno[3,2-b]thiophene, DRCN8TT a high efficiency of 8.11% was achieved, benefiting from the more preferred morphology.

III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates

2004 ◽  
Vol 836 ◽  
Author(s):  
Steven A. Ringel ◽  
Carrie L. Andre ◽  
Matthew Lueck ◽  
David Isaacson ◽  
Arthur J. Pitera ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Performance ◽  
High Efficiency ◽  
Defect Density ◽  
Basic Research ◽  
Open Circuit ◽  
Si Substrates ◽  
Lattice Matched ◽  
Open Circuit Voltages

ABSTRACTThe monolithic integration of high efficiency III-V compound solar cell materials and devices with lower-cost, robust and scaleable Si substrates has been a driving force in photovoltaics (PV) basic research for decades. Recent advances in controlling mismatch-induced defects that result from structural and chemical differences between III-V solar cell materials and Si using a combination of SiGe interlayers and monolayer-scale control of III-V/IV interfaces, have led to a series of fundamental advances at the material and device levels, which establish that the great potential of III-V/Si PV is within reach. These include demonstrations of GaAs epitaxial layers on Si that are anti-phase domain-free with verified dislocation densities at or below 1×106 cm−2 and negligible interface diffusion, minority carrier lifetimes for GaAs on Si in excess of 10 ns, single junction GaAs-based solar cells on Si with open circuit voltages (Voc) in excess of 980 mV, efficiencies beyond 18%, and area-independent PV characteristics up to at least 4 cm2. These advances are attributed in large part to the use of a novel “engineered Si substrate” based on compositionally-graded SiGe buffers such that a high-quality, low defect density, relaxed, “virtual” Ge substrate could be developed that can support lattice-matched III-V epitaxy and thus merge III-V technology based on the GaAs (or Ge) lattice constant with Si wafers. This paper focuses on recent results that extend this work to the first demonstration of high performance III-V dual junction solar cells on SiGe/Si. Open circuit voltages in excess of 2 V at one-sun have been obtained for the conventionally “lattice-matched” In0.49Ga0.51P/GaAs dual junction cells on inactive, engineered SiGe/Si; to our knowledge is the first demonstration of > 2V solar power generation on a Si wafer. Comparisons with identical cells on GaAs substrates reveal that the Voc on engineered Si retains more than 94% of its homoepitaxial value, and that at present both DJ/GaAs and DJ/SiGe/Si cells are similarly limited by current mismatch in these early cells, and not fundamental defect factors associated with the engineered Si substrates.

High-efficiency organic solar cells enabled by halogenation of polymers based on 2D conjugated benzobis(thiazole)

2020 ◽  
Vol 8 (27) ◽  
pp. 13671-13678 ◽  
Author(s):  
Shuguang Wen ◽  
Yonghai Li ◽  
Nan Zheng ◽  
Ibrahim Oladayo Raji ◽  
Chunpeng Yang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Power Conversion ◽  
Open Circuit ◽  
High Power Conversion Efficiency ◽  
Circuit Density

A novel polymer based on 2D conjugated benzobis(thiazole) exhibits a high power conversion efficiency of 14.8% in an organic solar cell with IT-4F as the acceptor, with short circuit density and open circuit voltage well-balanced therein.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

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