Discovery of a novel rare-earth free narrow-band blue-emitting phosphor Y3Al2Ga3O12:Bi3+ with strong NUV excitation for LCD LED backlights

2020 ◽  
Vol 8 (39) ◽  
pp. 13668-13675 ◽  
Author(s):  
Chibin Zheng ◽  
Puxian Xiong ◽  
Mingying Peng ◽  
Huailu Liu
Keyword(s):  
Rare Earth ◽  
Narrow Band ◽  
Blue Emission ◽  
Selective Excitation ◽  
Rare Earth Doped

Herein, an emerging no-rare earth doped and narrow-band blue-emitting phosphor of Y3Al2Ga3O12: Bi3+ with narrow-band blue emission peaking at 410 nm with FWHM of 39 nm, is pioneeringly developed via selective excitation.

Waveguide amplifiers in rare-earth doped glasses : fabrication, characterisation [MATH] modelling

1994 ◽  
Vol 04 (C4) ◽  
pp. C4-277-C4-280 ◽  
Author(s):  
B. HYDE ◽  
D. BARBIER ◽  
J. HUBNER ◽  
J.-M. JOUANNO ◽  
A. KEVORKIAN ◽  
...  
Keyword(s):  
Rare Earth ◽  
Waveguide Amplifiers ◽  
Doped Glasses ◽  
Rare Earth Doped

SYNTHESIS AND PHOTOLUMINESCENCE STUDIES OF RARE EARTH DOPED [1.5%] CaO

2019 ◽  
Vol 7 (3) ◽  
pp. 37
Author(s):  
JITESH CHANDRAPAL SHARMA ◽  
K. SURESH ◽  
Y. H. GANDHI ◽  
K. V. R. MURTHY ◽  
◽  
...  
Keyword(s):  
Rare Earth ◽  
Photoluminescence Studies ◽  
Rare Earth Doped

Improving VCSEL's & Rare-Earth-Doped Led's.

1998 ◽  
Author(s):  
hyatt M. Gibbs ◽  
Galina Khitrova
Keyword(s):  
Rare Earth ◽  
Rare Earth Doped

Enhanced electron correlation in rare-earth doped Ca3Co4O9

2010 ◽  
Vol 97 (6) ◽  
pp. 062114 ◽  
Author(s):  
Yang Wang ◽  
Luxiang Xu ◽  
Yu Sui ◽  
Xianjie Wang ◽  
Jinguang Cheng ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electron Correlation ◽  
Rare Earth Doped

Aged rare earth doped silicates as optoelectronic material

2010 ◽  
Vol 3 (3) ◽  
pp. 328-331
Author(s):  
Vandana Ranga ◽  
H. N. Acharya ◽  
R. K. Khanna ◽  
Anirudh Kumar
Keyword(s):  
Rare Earth ◽  
Rare Earth Doped

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

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