Synergistic morphology control and non-radiative defect passivation using a crown ether for efficient perovskite light-emitting devices

2020 ◽  
Vol 8 (29) ◽  
pp. 9986-9992
Author(s):  
Li Song ◽  
Lixin Huang ◽  
Yongsheng Hu ◽  
Xiaoyang Guo ◽  
Xingyuan Liu ◽  
...  

Promoted CsPbBr3 PeLED electroluminescent performance has been achieved using HM12C4 via ameliorating the film morphology and passivating defects.

2000 ◽  
Vol 660 ◽  
Author(s):  
Frédéric Lafolet ◽  
Karine Gorgy ◽  
Jean-Claude Leprêtre ◽  
Olivier Stéphan

2019 ◽  
Vol 31 (20) ◽  
pp. 1805244 ◽  
Author(s):  
Seungjin Lee ◽  
Da Bin Kim ◽  
Jae Choul Yu ◽  
Chung Hyeon Jang ◽  
Jong Hyun Park ◽  
...  

2020 ◽  
Vol 12 (13) ◽  
pp. 15928-15933 ◽  
Author(s):  
Kuifeng Jia ◽  
Li Song ◽  
Yongsheng Hu ◽  
Xiaoyang Guo ◽  
Xingyuan Liu ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Young Ran Park ◽  
Sangwon Eom ◽  
Hong Hee Kim ◽  
Won Kook Choi ◽  
Youngjong Kang

Abstract Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in Cs1−xFAxPbBr3 QDs. Due to the defect passivation by the enriched Br, the trap density in Cs1−xFAxPbBr3 significantly decreased after FA doping, and which improved the optical properties of Cs1−xFAxPbBr3 QDs and their QD-LEDs. PLQY of Cs1–xFAxPbBr3 QDs increased from 76.8% (x = 0) to 85.1% (x = 0.04), and Lmax and CEmax of Cs1–xFAxPbBr3 QD-LEDs were improved from Lmax = 2880 cd m−2 and CEmax = 1.98 cd A−1 (x = 0) to Lmax = 5200 cd m−2 and CEmax = 3.87 cd A−1 (x = 0.04). Cs1–xFAxPbBr3 QD-LED device structure was optimized by using PVK as a HTL and ZnO modified with b-PEI as an ETL. The energy band diagram of Cs1–xFAxPbBr3 QD-LEDs deduced by UPS analyses.


2003 ◽  
Vol 137 (1-3) ◽  
pp. 1089-1090 ◽  
Author(s):  
Qingjiang Sun ◽  
Chunhe Yang ◽  
Jin Zhai ◽  
Lei Jiang ◽  
Yongfang Li ◽  
...  

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  

2019 ◽  
Author(s):  
Miguel Anaya ◽  
Kyle Frohna ◽  
Linsong Cui ◽  
Javad Shamsi ◽  
Sam Stranks

1997 ◽  
Author(s):  
Y. Z. Wang ◽  
D. D. Gebler ◽  
D. K. Fu ◽  
T. M. Swager ◽  
A. J. Epstein

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