Influence of fluorination on electronic states and electron transport properties of Sr2IrO4 thin films

2020 ◽  
Vol 8 (24) ◽  
pp. 8268-8274
Author(s):  
Takahiro Maruyama ◽  
Akira Chikamatsu ◽  
Tsukasa Katayama ◽  
Kenta Kuramochi ◽  
Hiraku Ogino ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Pulsed Laser ◽  
Electronic States ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Electron Transport Properties

We fabricated layered-perovskite Sr2IrO4−xF2x thin films by combining pulsed-laser deposition with topotactic fluorination and investigated the modulation of their electronic states and electron transport properties.

Structure and Transport Properties of Nickel-Implanted CoSb3 Skutterudite Thin Films Synthesized via Pulsed Laser Deposition

2018 ◽  
Vol 1 (11) ◽  
pp. 5879-5886
Author(s):  
Manju Bala ◽  
Anha Masarrat ◽  
Anuradha Bhogra ◽  
R. C. Meena ◽  
Ying-Rui Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition

2006 ◽  
Vol 39 (1-4) ◽  
pp. 282-290 ◽  
Author(s):  
J.A. Sans ◽  
A. Segura ◽  
J.F. Sánchez-Royo ◽  
V. Barber ◽  
M.A. Hernández-Fenollosa ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

scholarly journals Epitaxial growth and magnetic/transport properties of La0.7Sr0.3MnO3 thin films grown on SrTiO3 with optimized growth conditions

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31327-31332 ◽  
Author(s):  
K. Wang ◽  
M. H. Tang ◽  
Y. Xiong ◽  
G. Li ◽  
Y. G. Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Colossal Magnetoresistive ◽  
Magnetic Transport

Epitaxial growth of colossal magnetoresistive thin films of La0.7Sr0.3MnO3 (LSMO) has been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD (pulsed laser deposition).

scholarly journals Influence of substrate on structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition

AIP Advances ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 025005 ◽  
Author(s):  
L. Cichetto ◽  
S. Sergeenkov ◽  
J. C. C. A. Diaz ◽  
E. Longo ◽  
F. M. Araújo-Moreira
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Influence Of Substrate

scholarly journals Transport properties of c-oriented MgB2 thin films grown by pulsed laser deposition

2002 ◽  
Vol 372-376 ◽  
pp. 1270-1273 ◽  
Author(s):  
C Ferdeghini ◽  
V Ferrando ◽  
G Grassano ◽  
W Ramadan ◽  
V Braccini ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mgb2 Thin Films

scholarly journals Pulsed laser deposition of amorphous InGaZnO4 as an electron transport layer for perovskite solar cells

2019 ◽  
Vol 09 (05) ◽  
pp. 1950042 ◽  
Author(s):  
Shanming Ke ◽  
Bukui Du ◽  
Zhenggang Rao ◽  
Chun Huang ◽  
Peng Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electron Transport ◽  
Pulsed Laser Deposition ◽  
Perovskite Solar Cells ◽  
Pulsed Laser ◽  
Transport Layer ◽  
Laser Deposition ◽  
Electron Transport Layer ◽  
Amorphous Ingazno

Hybrid perovskite solar cells (PSCs) have been intensively studied in recent years because of their high efficiency and low costs. For PSCs, the electron transport layer (ETL) is a key for its photoelectric conversion efficiency. Here we demonstrate the application of amorphous InGaZnO4 thin films as ETL for efficient PSCs by pulsed laser deposition (PLD). The PSC device using such InGaZnO4 amorphous film as ETL has achieved an efficiency of 15.1%. The outstanding performance is attributed to the excellent properties of amorphous InGaZnO4 oxide thin films, including high electron mobility and high transparency, what is more, the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process. Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.

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