Enhanced stability and performance of light-emitting diodes based on in situ fabricated FAPbBr3 nanocrystals via ligand compensation with n-octylphosphonic acid

2020 ◽  
Vol 8 (29) ◽  
pp. 9936-9944 ◽  
Author(s):  
Yanan Wu ◽  
Lihui Liu ◽  
Wei Wang ◽  
Wenzhu Zhang ◽  
Hongtao Yu ◽  
...  

Dual ligands are introduced for the in situ fabrication of perovskite nanocrystals, leading to higher crystallinity, improved stability and device efficiency.

2019 ◽  
Vol 50 (S1) ◽  
pp. 567-567
Author(s):  
Dengbao Han ◽  
Muhammad Imran ◽  
Xin Zhang ◽  
Chenhui Wang ◽  
Shuai Chang ◽  
...  

Author(s):  
Woo Hyeon Jeong ◽  
Zhongkai Yu ◽  
Luca Gregori ◽  
Jonghee Yang ◽  
Su Ryong Ha ◽  
...  

Next-generation electroluminescent displays require efficient and stable red, green and blue light-emitting diodes (LEDs) with low cost, excellent color purity and flexibility, for which perovskites-based LEDs (PeLEDs) are a promising...


2020 ◽  
Vol 11 (24) ◽  
pp. 10348-10353
Author(s):  
Wenjie Xu ◽  
Ruiqi Ji ◽  
Pinlei Liu ◽  
Lu Cheng ◽  
Lin Zhu ◽  
...  

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chenhui Wang ◽  
Dengbao Han ◽  
Junhui Wang ◽  
Yingguo Yang ◽  
Xinyue Liu ◽  
...  

AbstractIn the field of perovskite light-emitting diodes (PeLEDs), the performance of blue emissive electroluminescence devices lags behind the other counterparts due to the lack of fabrication methodology. Herein, we demonstrate the in situ fabrication of CsPbClBr2 nanocrystal films by using mixed ligands of 2-phenylethanamine bromide (PEABr) and 3,3-diphenylpropylamine bromide (DPPABr). PEABr dominates the formation of quasi-two-dimensional perovskites with small-n domains, while DPPABr induces the formation of large-n domains. Strong blue emission at 470 nm with a photoluminescence quantum yield up to 60% was obtained by mixing the two ligands due to the formation of a narrower quantum-well width distribution. Based on such films, efficient blue PeLEDs with a maximum external quantum efficiency of 8.8% were achieved at 473 nm. Furthermore, we illustrate that the use of dual-ligand with respective tendency of forming small-n and large-n domains is a versatile strategy to achieve narrow quantum-well width distribution for photoluminescence enhancement.


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