Seed crystal free growth of high-quality double cation – double halide perovskite single crystals for optoelectronic applications

2020 ◽  
Vol 8 (24) ◽  
pp. 8275-8283
Author(s):  
Julian Höcker ◽  
Mehmet Ozcan ◽  
Sebastian Hammer ◽  
Mathias Fischer ◽  
Benedikt Bichler ◽  
...  
Keyword(s):  
Single Crystals ◽  
Seed Crystal ◽  
High Quality ◽  
Crystallization Method ◽  
Halide Perovskite ◽  
Free Growth ◽  
Optoelectronic Applications

We developed a seed crystal free re-fill crystallization method (RFCM) to grow high-quality (FAPbI3)0.9(MAPbBr3)0.1 perovskite single crystals for optoelectronic applications.

Perovskite CH3NH3Pb(BrxI1−x)3 single crystals with controlled composition for fine-tuned bandgap towards optimized optoelectronic applications

2016 ◽  
Vol 4 (39) ◽  
pp. 9172-9178 ◽  
Author(s):  
Yunxia Zhang ◽  
Yucheng Liu ◽  
Yajuan Li ◽  
Zhou Yang ◽  
Shengzhong (Frank) Liu
Keyword(s):  
Single Crystals ◽  
Halide Perovskite ◽  
Optoelectronic Applications

A series of dual-halide perovskite CH3NH3Pb(BrxI1−x)3 (x = 0–1) single crystals were prepared, which exhibited superior photoresponse performance.

scholarly journals Electrical properties of cation-substituted Ag7(Si1–xGex)S5I single crystals

2021 ◽  
Vol 24 (3) ◽  
pp. 241-247
Author(s):  
I.P. Studenyak ◽  
◽  
A.I. Pogodin ◽  
I.A. Shender ◽  
M.J. Filep ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Single Crystals ◽  
Solid Solutions ◽  
Frequency Range ◽  
Electronic Components ◽  
High Quality ◽  
Crystallization Method ◽  
Vertical Zone ◽  
Nyquist Plots

High-quality single crystals of Ag7(Si1–xGex)S5I (x = 0.2, 0.4, 0.6, 0.8) solid solutions are grown from the solution–melt by vertical zone crystallization method. The measurements of electrical conductivity of Ag7(Si1–xGex)S5I solid solutions were performed using the impedance spectroscopy method within the frequency range from 10 Hz up to 2·106 Hz and temperature interval 293–383 K. Ionic and electronic components of electrical conductivity, as well as their ratios, were determined using the Nyquist plots.

High-Quality, Ligands-Free, Mixed-Halide Perovskite Nanocrystals Inks for Optoelectronic Applications

2016 ◽  
Vol 7 (8) ◽  
pp. 1601703 ◽  
Author(s):  
Francesco Lamberti ◽  
Lucio Litti ◽  
Michele De Bastiani ◽  
Roberto Sorrentino ◽  
Marina Gandini ◽  
...  
Keyword(s):  
High Quality ◽  
Perovskite Nanocrystals ◽  
Halide Perovskite ◽  
Optoelectronic Applications

scholarly journals Halide Perovskite Single Crystals: Optoelectronic Applications and Strategical Approaches

Energies ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 4250 ◽  
Author(s):  
Yurou Zhang ◽  
Miaoqiang Lyu ◽  
Tengfei Qiu ◽  
Ekyu Han ◽  
Il Ku Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Single Crystals ◽  
Defect Density ◽  
Synthesis Methods ◽  
Polycrystalline Thin Film ◽  
Single Crystalline ◽  
Halide Perovskite ◽  
Optoelectronic Applications

Halide perovskite is one of the most promising semiconducting materials in a variety of fields such as solar cells, photodetectors, and light-emitting diodes. Lead halide perovskite single crystals featuring long diffusion length, high carrier mobility, large light absorption coefficient and low defect density, have been attracting increasing attention. Fundamental study of the intrinsic nature keeps revealing the superior optoelectrical properties of perovskite single crystals over their polycrystalline thin film counterparts, but to date, the device performance lags behind. The best power conversion efficiency (PCE) of single crystal-based solar cells is 21.9%, falling behind that of polycrystalline thin film solar cells (25.2%). The oversized thickness, defective surfaces, and difficulties in depositing functional layers, hinder the application of halide perovskite single crystals in optoelectronic devices. Efforts have been made to synthesize large-area single crystalline thin films directly on conductive substrates and apply defect engineering approaches to improve the surface properties. This review starts from a comprehensive introduction of the optoelectrical properties of perovskite single crystals. Then, the synthesis methods for high-quality bulk crystals and single-crystalline thin films are introduced and compared, followed by a systematic review of their optoelectronic applications including solar cells, photodetectors, and X-ray detectors. The challenges and strategical approaches for high-performance applications are summarized at the end with a brief outlook on future work.

A TECHNIQUE FOR THE GROWTH OF HIGH QUALITY SINGLE CRYSTALS OF ICE

1987 ◽  
Vol 48 (C1) ◽  
pp. C1-595-C1-598 ◽  
Author(s):  
M. OHTOMO ◽  
S. AHMAD ◽  
R. W. WHITWORTH
Keyword(s):  
Single Crystals ◽  
High Quality

scholarly journals Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
High Performance ◽  
Group Iv ◽  
X Ray Diffraction ◽  
High Quality ◽  
Practical Applications ◽  
Large Size ◽  
Growth Method ◽  
Polarized Raman

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

Room-temperature synthesis, growth mechanisms and opto-electronic properties of organic–inorganic halide perovskite CH3NH3PbX3 (X = I, Br, and Cl) single crystals

CrystEngComm ◽  
2021 ◽  
Author(s):  
Maryam Bari ◽  
Hua Wu ◽  
Alexei A. Bokov ◽  
Rana Faryad Ali ◽  
Hamel N. Tailor ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Single Crystals ◽  
Room Temperature ◽  
Solubility Curve ◽  
Inverse Temperature ◽  
Growth Mechanisms ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Halide Perovskite ◽  
Temperature Crystallization

Growth of MAPbX3 (X = I, Br, and Cl) single crystals by room temperature crystallization (RTC) method, and the crystallization pathway illustrated by the solubility curve of MAPbCl3 in DMSO, compared with inverse temperature crystallization (ITC) method.

Core/Shell Metal Halide Perovskite Nanocrystals for Optoelectronic Applications

2021 ◽  
pp. 2100438
Author(s):  
Chengxi Zhang ◽  
Jiayi Chen ◽  
Lingmei Kong ◽  
Lin Wang ◽  
Sheng Wang ◽  
...  
Keyword(s):  
Metal Halide ◽  
Core Shell ◽  
Perovskite Nanocrystals ◽  
Metal Halide Perovskite ◽  
Halide Perovskite ◽  
Optoelectronic Applications

scholarly journals Lead-free halide perovskite Cs3Bi2Br9 single crystals for high-performance X-ray detection

2021 ◽  
Author(s):  
Xiang Li ◽  
Xinyuan Du ◽  
Peng Zhang ◽  
Yunqiu Hua ◽  
Lin Liu ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Lead Free ◽  
X Ray ◽  
Halide Perovskite
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