Bismuth triiodide complexes: structure, spectroscopy, electronic properties, and memristive properties

2020 ◽  
Vol 8 (18) ◽  
pp. 6136-6148
Author(s):  
Ewelina Wlaźlak ◽  
Justyna Kalinowska-Tłuścik ◽  
Dawid Przyczyna ◽  
Piotr Zawal ◽  
Konrad Szaciłowski
Keyword(s):  
Electronic Properties ◽  
Metal Electrodes ◽  
Inorganic Complexes ◽  
Bismuth Triiodide

A clockwise and anticlockwise I–V pattern observed for memristive devices based on bismuth(iii) iodide organic–inorganic complexes and different metal electrodes.

Engineering electronic properties of metal–MoSe2 interfaces using self-assembled monolayers

2014 ◽  
Vol 2 (46) ◽  
pp. 9842-9849 ◽  
Author(s):  
Deniz Çakır ◽  
Cem Sevik ◽  
François M. Peeters
Keyword(s):  
Electronic Properties ◽  
Self Assembled Monolayers ◽  
Polar Molecules ◽  
Self Assembled Monolayer ◽  
Metal Electrodes ◽  
Assembled Monolayers ◽  
Self Assembled

The electronic properties of MoSe2 can be modified by manipulating its interaction with metal electrodes using a self-assembled monolayer of polar molecules.

Vibrational and electronic properties of cyanide adsorbed on metal electrodes

1987 ◽  
Vol 45 ◽  
pp. 169-175 ◽  
Author(s):  
M.R. Philpott ◽  
P.S. Bagus ◽  
C.J. Nelin ◽  
H. Seki
Keyword(s):  
Electronic Properties ◽  
Metal Electrodes

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties

The electronic properties of a radical cation salt of bis-ethylenedioxodibenzofuran, [(bEDODBF)5 (AsF6)2(CH2Cl 2)0.2]

1988 ◽  
Vol 49 (4) ◽  
pp. 667-673 ◽  
Author(s):  
S. Söderholm ◽  
J. Hellberg ◽  
G. Ahlgren ◽  
M. Krebs ◽  
J.U. von Schütz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cation ◽  
Radical Cation Salt

Electronic properties of TTF-TCNQ : a connection between theory and experiment

1978 ◽  
Vol 39 (12) ◽  
pp. 1355-1363 ◽  
Author(s):  
L.G. Caron ◽  
M. Miljak ◽  
D. Jerome
Keyword(s):  
Electronic Properties ◽  
Theory And Experiment
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