Atomically tunable photo-assisted electrochemical oxidation process design for the decoration of ultimate-thin CuO on Cu2O photocathodes and their enhanced photoelectrochemical performances

2020 ◽  
Vol 8 (41) ◽  
pp. 21744-21755
Author(s):  
Dong Su Kim ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
Nishad G. Deshpande ◽  
Ji Hoon Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electrochemical Oxidation ◽  
Process Design ◽  
Oxidation Process ◽  
High Density ◽  
Oxygen Atmosphere ◽  
Defect Sites

A representative method of forming CuO thin films on Cu2O photoabsorbers is simple annealing oxidation at high temperature in a controlled oxygen atmosphere, but the typical oxidation process is irregular, resulting in a high density of defect sites.

Stability of Graphene Growth on CuNi Thin Films in a High-Temperature Hydrogen/Oxygen Atmosphere

2020 ◽  
Vol 20 (2) ◽  
pp. 1211-1217
Author(s):  
Yijian Liang ◽  
Yanhui Zhang ◽  
Zhiying Chen ◽  
Shike Hu ◽  
He Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Oxygen Atmosphere ◽  
Graphene Growth

Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere

2016 ◽  
Vol 51 (18) ◽  
pp. 8711-8717 ◽  
Author(s):  
L. Trupina ◽  
L. Nedelcu ◽  
C. Negrila ◽  
M. G. Banciu ◽  
L. Huitema ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Oxygen Atmosphere

Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O.

1991 ◽  
Vol 222 ◽  
Author(s):  
Maki Kawai ◽  
Masami Mori ◽  
Shunji Watabe ◽  
Ziyuan Liu ◽  
Yasunori Tabira ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Oxidation Process ◽  
Elementary Unit

ABSTRACTMolecular beam epitaxy of ultra thin films of Bi2Sr2CuO8-(2201 phase) is realized on the surface of SrTiO3 (100) and LaAlO3 (100) at the substrate temperature of 573 K, using 10-5Pa of NO2 as an oxidant. The film epitaxially grown from the surface of the substrate has identical in-plane lattice constant to the substrate itself. Such a growth can only be obtained on the substrate with similar lattice constant to those of the material to be formed. The crystallinity of the film strongly depended on the sequence of the metal depositions and the oxidation process. In the case of the Bi system, the elementary unit of the epitaxial growth has proved to be the subunit of the perovskite structure (Sr-Cu-Sr). The structure of the film grown on a substrate with large mismatch (MgO) is also discussed.

A transmission electron microscopic study of ceramic superconducting thin films prepared by laser deposition

1988 ◽  
Vol 46 ◽  
pp. 864-865
Author(s):  
D. M. Hwang ◽  
L. Nazar ◽  
X. D. Wu ◽  
A. Inam ◽  
T. Venkatesan
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Oxygen Atmosphere ◽  
Critical Temperatures ◽  
Electron Microscopic ◽  
Transmission Electron Microscopic Study ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Krf Excimer Laser ◽  
Film Form

Many applications of the new high temperature ceramic superconductors require the materials to be prepared in a thin film form. The substrates play an essential role in the superconducting properties of these films. In order to optimize the critical temperatures and currents of the films and to search for new suitable substrates of desirable properties, it is important to understand the interfacial interaction between the films and the substrates. TEM studies of the cross-sectioned specimens are indispensable in providing such information.In this paper, we describe the microscopic structures of two types of Y-Ba-Cu-O thin films deposited on SrTiO3 substrates with a KrF excimer laser. The high-temperature-processed specimens are deposited at 450 C in vacuum and post-annealed for 1 hr at 900 C in an oxygen atmosphere. The low-temperature-processed specimens are deposited at 650 C in an oxygen pressure of 5 mTorr, and post-annealed for 3 hr at 450 C in an oxygen atmosphere.

Hardening of metal surface via self-propagating high-temperature synthesis in thin films

2007 ◽  
Vol 43 (4) ◽  
pp. 239-242
Author(s):  
S. Kh. Suleimanov ◽  
O. A. Dudko ◽  
V. G. Dyskin ◽  
Z. S. Settarova ◽  
M. U. Dzhanklych
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Metal Surface ◽  
Temperature Synthesis ◽  
High Temperature Synthesis

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

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