Solution processable small molecules as efficient electron transport layers in organic optoelectronic devices

2020 ◽  
Vol 8 (27) ◽  
pp. 13501-13508 ◽  
Author(s):  
Jun Tae Kim ◽  
Jihoon Lee ◽  
Soyeong Jang ◽  
Zhongkai Yu ◽  
Jong Hyun Park ◽  
...  
Keyword(s):  
Electron Transport ◽  
Small Molecules ◽  
Active Layer ◽  
Optoelectronic Devices ◽  
Organic Optoelectronic Devices ◽  
Solution Processable ◽  
Organic Optoelectronic

The coated QPSMs form the interfacial dipole between the active layer and the cathode, which can induce the tuned WF of Al, leading to the enhanced electron transport in OSCs and OLEDs.

Conjugated Oligoelectrolyte Electron Transport/Injection Layers for Organic Optoelectronic Devices

2008 ◽  
Vol 130 (11) ◽  
pp. 3282-3283 ◽  
Author(s):  
Renqiang Yang ◽  
Yunhua Xu ◽  
Xuan-Dung Dang ◽  
Thuc-Quyen Nguyen ◽  
Yong Cao ◽  
...  
Keyword(s):  
Electron Transport ◽  
Optoelectronic Devices ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic

scholarly journals Revealing molecular conformation–induced stress at embedded interfaces of organic optoelectronic devices by sum frequency generation spectroscopy

2021 ◽  
Vol 7 (16) ◽  
pp. eabf8555
Author(s):  
Zhongwu Wang ◽  
Hongzhen Lin ◽  
Xi Zhang ◽  
Jie Li ◽  
Xiaosong Chen ◽  
...  
Keyword(s):  
Molecular Conformation ◽  
Optoelectronic Devices ◽  
Sum Frequency Generation ◽  
Interface Stress ◽  
Sum Frequency ◽  
Device Stability ◽  
Induced Stress ◽  
Organic Optoelectronic Devices ◽  
Organic Devices ◽  
Organic Optoelectronic

Interface stresses are pervasive and critical in conventional optoelectronic devices and generally lead to many failures and reliability problems. However, detection of the interface stress embedded in organic optoelectronic devices is a long-standing problem, which causes the unknown relationship between interface stress and organic device stability (one key and unsettled issue for practical applications). In this study, a kind of previously unknown molecular conformation–induced stress is revealed at the organic embedded interface through sum frequency generation (SFG) spectroscopy technique. This stress can be greater than 10 kcal/mol per nm2 and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm2), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.

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