Direct observation of continuous networks of ‘sol–gel’ processed metal oxide thin film for organic and perovskite photovoltaic modules with long-term stability

2020 ◽  
Vol 8 (36) ◽  
pp. 18659-18667
Author(s):  
Soonil Hong ◽  
Geunjin Kim ◽  
Byoungwook Park ◽  
Ju-Hyeon Kim ◽  
Junghwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Photovoltaic Modules ◽  
Long Term Stability ◽  
Metal Oxide Thin Film ◽  
Continuous Metal ◽  
Perovskite Photovoltaic

Continuous metal oxygen networks of TiOx are formed on top of organic semiconductors with favorable surface energy, which prolong T80-lifetime for organic and perovskite modules up to more than 2000 hours.

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Lithium ion assisted hydration of metal ions in non-aqueous sol–gel inks for high performance metal oxide thin-film transistors

2015 ◽  
Vol 3 (24) ◽  
pp. 6276-6283 ◽  
Author(s):  
Jee Ho Park ◽  
Jin Young Oh ◽  
Hong Koo Baik ◽  
Tae Il Lee
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Metal Ions ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Lithium Ion ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Enhanced hydration lowers the dehydroxylation temperature of the sol–gel inks, resulting in high-performance metal oxide thin film transistors.

(Invited) Low-Temperature Sol-Gel Derived Ultra-Flexible Metal-Oxide Thin-Film-Transistors and Their Applications

2016 ◽  
Vol 75 (10) ◽  
pp. 123-126
Author(s):  
J.-W. Jo ◽  
J. S. Heo ◽  
K.-T. Kim ◽  
J. Kim ◽  
M.-G. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Flexible Metal

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film
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