The influence of side-chain conformations on the phase behavior of bottlebrush block polymers

Soft Matter ◽  
2020 ◽  
Vol 16 (34) ◽  
pp. 8047-8056
Author(s):  
Yuguo Chen ◽  
Xinghua Zhang ◽  
Ying Jiang

A self-consistent field theory based on the wormlike chain model is implemented in the investigation of the self-assembly behavior of bottlebrush block polymers in the formation of a lamellar phase.

Author(s):  
Gaohang Chen ◽  
Hui Zhang ◽  
Teng Lu ◽  
Ying Jiang

A self-consistent field theory formalism based on the wormlike chain model is developed to investigate the stress–strain relation for mesostructures in diblock copolymers under the influence of chain rigidity.


2018 ◽  
Vol 36 (7) ◽  
pp. 888-896 ◽  
Author(s):  
Dan Liu ◽  
Ying-Ying Wang ◽  
Ying-Chun Sun ◽  
Yuan-Yuan Han ◽  
Jie Cui ◽  
...  

2014 ◽  
Vol 53 (2) ◽  
pp. 142-153 ◽  
Author(s):  
Nabil Laachi ◽  
Kris T. Delaney ◽  
Bongkeun Kim ◽  
Su-Mi Hur ◽  
Robert Bristol ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 3233-3245 ◽  
Author(s):  
Amin Koochaki ◽  
Mohammad Reza Moghbeli ◽  
Sousa Javan Nikkhah ◽  
Alessandro Ianiro ◽  
Remco Tuinier

The self-assembly behaviour of dual-responsive block copolymers and their ability to solubilize the drug doxorubicin is demonstrated using molecular dynamics simulations, coarse-grained force field simulations and self-consistent field theory.


2015 ◽  
Vol 15 (10) ◽  
pp. 8183-8186
Author(s):  
Sang-Kon Kim

Directed self-assembly (DSA) of block copolymers (BCPs) has become an intense field of study as a complementary technique to conventional lithography for 1×-nm semiconductor patterning. DSA contact hole (C/H) shrinking is a possible implemental technique in the DSA process. In this paper, a DSA C/H shrinking is fully modeled and simulated by using a self-consistent field theory (SCFT). Simulation results show good agreement with experiment results. In terms of this simulation, the potential of DSA C/H shrinking with thermal reflow is integrated into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. The optical proximity correction (OPC) of DSA C/H shrinking due to prepattern C/H and pitch can increase process window for DSA C/H shrinking.


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