scholarly journals Growth mode and strain effect on relaxor ferroelectric domains in epitaxial 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3/SrRuO3 heterostructures

RSC Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 1222-1232
Author(s):  
Jamal Belhadi ◽  
Urška Gabor ◽  
Hana Uršič ◽  
Nina Daneu ◽  
Jieun Kim ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Relaxor Ferroelectric ◽  
Growth Mode ◽  
Strain Effect ◽  
Ferroelectric Domains ◽  
Diffraction Patterns ◽  
Strained Films

Strain engineering in epitaxial PMN–33PT films revealed an evolution from a butterfly-shaped diffraction for mildly strained films, evidencing the stabilization of relaxor domains, to disc-shaped diffraction patterns for high compressive strains.

scholarly journals Strain driven emergence of topological non-triviality in YPdBi thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Vishal Bhardwaj ◽  
Anupam Bhattacharya ◽  
Shivangi Srivastava ◽  
Vladimir V. Khovaylo ◽  
Jhuma Sannigrahi ◽  
...  
Keyword(s):  
Thin Films ◽  
Heavy Fermion ◽  
Critical Role ◽  
Surface States ◽  
Strain Engineering ◽  
Emergent Properties ◽  
Spintronic Devices ◽  
Topological States ◽  
Topological Surface ◽  
Strained Films

AbstractHalf-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.

scholarly journals Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substrates

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Chun Feng ◽  
Jiancheng Zhao ◽  
Feng Yang ◽  
Kui Gong ◽  
Shijie Hao ◽  
...  
Keyword(s):  
Shape Memory ◽  
Elastic Strain ◽  
Lattice Strain ◽  
Physical Nature ◽  
Strain Engineering ◽  
Strain Effect ◽  
Pure Strain ◽  
Electronic Density ◽  
Fept Film ◽  
Novel Approach

Abstract Tuning the lattice strain (εL) is a novel approach to manipulate the magnetic, electronic and transport properties of spintronic materials. Achievable εL in thin film samples induced by traditional ferroelectric or flexible substrates is usually volatile and well below 1%. Such limits in the tuning capability cannot meet the requirements for nonvolatile applications of spintronic materials. This study answers to the challenge of introducing significant amount of elastic strain in deposited thin films so that noticeable tuning of the spintronic characteristics can be realized. Based on subtle elastic strain engineering of depositing L10-FePt films on pre-stretched NiTi(Nb) shape memory alloy substrates, steerable and nonvolatile lattice strain up to 2.18% has been achieved in the L10-FePt films by thermally controlling the shape memory effect of the substrates. Introduced strains at this level significantly modify the electronic density of state, orbital overlap and spin-orbit coupling (SOC) strength in the FePt film, leading to nonvolatile modulation of magnetic anisotropy and magnetization reversal characteristics. This finding not only opens an efficient avenue for the nonvolatile tuning of SOC based magnetism and spintronic effects, but also helps to clarify the physical nature of pure strain effect.

An electron diffraction and Monte Carlo simulation study of an incommensurate antiferroelectric state in the relaxor ferroelectric Pb2ScTaO6

2009 ◽  
Vol 43 (1) ◽  
pp. 140-150 ◽  
Author(s):  
K. Z. Baba-Kishi ◽  
M. Pasciak
Keyword(s):  
Monte Carlo ◽  
Electron Diffraction ◽  
Relaxor Ferroelectric ◽  
Advanced Degree ◽  
Monte Carlo Simulation Study ◽  
Transmission Electron ◽  
Incommensurate Modulation ◽  
Pb Ions ◽  
Specific Temperature ◽  
Diffraction Patterns

Incommensurate satellite reflections modulating along the 〈110〉* directions have been observed in the electron diffraction patterns of single crystals of the relaxor ferroelectric Pb2ScTaO6(PST) recordedviatransmission electron microscopy. The satellites occur characteristically within a specific temperature range and display differing or variable modulation vectors relative to their primary reflections. The satellites represent a weak frustrated antiferroelectric state in PST, termed the incommensurate antiferroelectric (IAFE) state. The observed IAFE state coexists with the ferroelectric and paraelectric states within a specific temperature regime and is dynamic in nature, meaning that the dispositions of the satellites can be altered by varying the temperature applied to the crystal,in-situin the transmission electron microscope. The observed satellites are associated with thin, needle-shaped, closely packed striated domains of about 5–15 nm in width. The satellites appear exclusively in crystals of PST with an advanced degree of 1:1 chemical long-range order, exceeding 90%. The satellites and their domains are interpreted as originating from a displacive, antiferroelectric coupling of the ions, driven in particular by the Pb ions. The Monte Carlo (MC) method was used exhaustively to evaluate the structural regimes that lead to the occurrence of the IAFE state. In the MC simulations, the displacements were correlated with the ferroelectric and antiferroelectric couplings, resulting in the IAFE domains and their associated satellites of differing dispositions or modulation vectors. The results of the MC simulations agree well with the electron diffraction observations, supporting the model of an antiferroelectric displacement with an incommensurate modulation of the Pb ions in the 〈110〉* directions.

Strain-effect for controlled growth mode and well-ordered structure of quaterrylene thin films

2010 ◽  
Vol 133 (3) ◽  
pp. 034706 ◽  
Author(s):  
Ryoma Hayakawa ◽  
Ayse Turak ◽  
XueNa Zhang ◽  
Nobuya Hiroshiba ◽  
Helmut Dosch ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Strain Effect ◽  
Controlled Growth ◽  
Ordered Structure

scholarly journals Structural properties and strain engineering of a BeB2 monolayer from first-principles

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38410-38414 ◽  
Author(s):  
Fanhao Jia ◽  
Yuting Qi ◽  
Shunbo Hu ◽  
Tao Hu ◽  
Musen Li ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Structural Properties ◽  
First Principles ◽  
Structure Prediction ◽  
2D Materials ◽  
Strain Engineering ◽  
Strain Effect ◽  
Crystal Structure Prediction ◽  
First Principles Calculations

Using crystal structure prediction and first-principles calculations, we investigated new phases of BeB2 monolayers and discussed their structural, electronic and strain effect properties of such boron-based 2D materials.

Ferroelectric Behavior and Microstructure of Calcium-Modified Lead Titanate Ceramics

1994 ◽  
Vol 360 ◽  
Author(s):  
Zhiqiang Zhuang ◽  
G.A. Kulesha ◽  
H. Du ◽  
B. Gallois
Keyword(s):  
Lead Titanate ◽  
Ultrasonic Transducers ◽  
Relaxor Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Ferroelectric Domains ◽  
Diffraction Patterns ◽  
Acoustic Wave Devices ◽  
Titanate Ceramics

AbstractCalcium-doped lead titanate ceramics exhibiting piezoelectric anisotropy were fabricated for applications in ultrasonic transducers, infrared detectors and surface acoustic wave devices. Transmission electron microscopy and X-ray diffraction techniques were used to characterize the development of the piezoelectric anisotropy and the dependence of the piezoelectric anisotropy on microstructure. Electron diffraction patterns indicated that most of the ferroelectric domains in samples with [CaA] up to 30 mole% were 90° domains. The size of the ferroelectric domains was not related to piezoelectric anisotropy. Ferroelectric domains could not be detected above this concentration. Measurements of the temperature dependence of dielectric properties at different frequencies did not show any ferroelectric relaxor behavior.

scholarly journals Structural, Dielectric, Magnetic and Optical Properties of Cerium Substituted Ni-Zn Mixed Ferrite

2017 ◽  
Vol 14 (2) ◽  
pp. 133-139 ◽  
Author(s):  
Lovely George ◽  
C. Viji ◽  
Haisel Mathew ◽  
E.M. Mohammed
Keyword(s):  
Single Phase ◽  
Sol Gel ◽  
Strain Effect ◽  
X Ray Diffraction ◽  
Semiconducting Materials ◽  
Octahedral Sites ◽  
In Doping ◽  
Wide Range ◽  
Diffraction Patterns ◽  
Lower Saturation

Ce3+ doped Nickel Zinc ferrites have been synthesised by sol-gel method followed by sintering at 4000C for 4 hours. Powder X-ray diffraction patterns of the prepared samples confirm the formation of single phase cubic spinel structure. Crystallite size of samples doped with Ce are smaller than that of undoped ferrite. The lattice parameters decrease with increase in doping concentration of Ce3+ ion. W-H plots are drawn to study the strain effect in crystal structure.SEM micrographs show formation of spherical shaped nanoparticles. The vibration bands corresponding to metal oxygen vibrations at tetrahedral and octahedral sites in the FTIR spectra are in the reported range suggesting Ce3+occupation on octahedral sites predominantly. The doped samples exhibited lower saturation magnetization. The relative permittivity is found to show a decreasing trend with increase in frequency for all the samples which is characteristic of normal ferrimagnetism. The AC conductivity initially increases with frequency then remains constant over a wide range of frequencies. The UV analyses give the band gap which is less than 2 eV for all the samples which show that these are semiconducting materials.

scholarly journals Strain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers

2017 ◽  
Vol 4 ◽  
Author(s):  
Jutta Schwarzkopf ◽  
Dorothee Braun ◽  
Michael Hanke ◽  
Reinhard Uecker ◽  
Martin Schmidbauer
Keyword(s):  
Strain Engineering ◽  
Epitaxial Layers ◽  
Ferroelectric Domains

Effect of Annealing on the Structure and Dielectric Properties in PZT-PCoN Ceramics

2008 ◽  
Vol 55-57 ◽  
pp. 49-52
Author(s):  
Naratip Vittayakorn ◽  
N. Chaiyo ◽  
R. Muanghlua ◽  
A. Ruangphanit ◽  
Wanwilai C. Vittayakorn
Keyword(s):  
Solid Solution ◽  
Dielectric Properties ◽  
Solid State Reaction Method ◽  
Relaxor Ferroelectric ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
Maximum Dielectric Constant ◽  
Diffraction Patterns

he solid solution between the normal ferroelectric Pb(Zr1/2Ti1/2)O3 (PZT) and relaxor ferroelectric Pb(Co1/3Nb2/3)O3 (PCoN) was synthesized by the solid state reaction method. Sintered PZT-PCoN ceramics were annealed at temperatures ranging from 850 to 1,100°C for 4 h. X-ray diffraction patterns revealed changes of crystalline structure after annealing, which could be correlated to the accompanied changes in dielectric properties. Furthermore, significant improvements in the dielectric responses were observed in this system. After annealing, a huge increase of up to 200% occurred in the dielectric constants, especially near the temperature of maximum dielectric constant.

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