scholarly journals N-type and p-type molecular doping on monolayer MoS2

RSC Advances ◽  
2021 ◽  
Vol 11 (14) ◽  
pp. 8033-8041
Author(s):  
Ong Kim Le ◽  
Viorel Chihaia ◽  
Vo Van On ◽  
Do Ngoc Son
Keyword(s):  
Optical Properties ◽  
Molecular Adsorption ◽  
Monolayer Mos2 ◽  
Electronic And Optical Properties ◽  
Molecular Doping ◽  
P Type

Pressure controls electronic and optical properties of monolayer MoS2 with organic molecular adsorption.

Enhancing electronic and optical properties of monolayer MoSe2via a MoSe2/blue phosphorene heterobilayer

2019 ◽  
Vol 21 (28) ◽  
pp. 15760-15766 ◽  
Author(s):  
Huabing Shu ◽  
Ying Wang ◽  
Minglei Sun
Keyword(s):  
Optical Properties ◽  
Charge Carriers ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Effective Separation ◽  
P Type ◽  
Blue Phosphorene

Type-II heterostructures are appealing for application in optoelectronics due to their effective separation of photogenerated charge carriers.

scholarly journals First-Principles Calculations of the Structural, Electronic and Optical Properties of Yttrium-Doped SnO2

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Nabil Beloufa ◽  
Youcef Chechab ◽  
Souad Louhibi-Fasla ◽  
Abbes Chahed ◽  
Samir Bekheira ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Level Shifts ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type ◽  
Theoretical Results ◽  
Good Agreement

Abstract We use FP-LAPW method to study structural, electronic, and optical properties of the pure and Y-doped SnO2. The results show that by Y doping of SnO2 the band gaps are broadened, and still direct at Γ-point. For pure SnO2 material, the obtained values of the direct band gap are 0.607 eV for GGA-PBE and 2.524 eV for GGATB-mBJ, respectively. This later is in good agreement with the experimental data and other theoretical results. The Fermi level shifts into the valence band and exhibits p-type semiconductor character owing mainly from the orbital 4d-Y. Additionally, the calculated optical properties reveal that all concentrations are characterized by low reflectivity and absorption via wavelength λ (nm) in the visible light and near-infrared (NIR) ranges, which leads to a redshift in the optical transparency.

Exploration on electronic and optical properties of two-dimensional GaN-doped with Be, Mg, Zn

2020 ◽  
Vol 34 (20) ◽  
pp. 2050195
Author(s):  
Gang Li ◽  
Lei Liu ◽  
Jian Tian
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Of States ◽  
First Principles ◽  
High Energy ◽  
Low Energy ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
Type Semiconductor ◽  
P Type

To explore the variation on p-type-doped two-dimensional GaN, we calculate electronic and optical properties of buckled two-dimensional GaN-doped with p-type doping elements including Be, Mg and Zn atom by using first-principles. The results indicate that doping process of two-dimensional GaN after Be is most easily compared with Mg- and Zn-doped models. Band of doped two-dimensional GaN moves toward high energy end and it becomes a p-type semiconductor from the results of band structure and density of states, which may be caused by orbitals hybridization from dopants. Band gap and work function of doped two-dimensional GaN are both declined, which is beneficial for escape of electrons. Analysis of optical properties shows that they are sensitive and adjustable in doped two-dimensional GaN. Doping of Be, Mg and Zn atoms would have an important effect on optical characteristics of two-dimensional GaN at low-energy region.

FIRST PRINCIPLES STUDY ON ELECTRONIC AND OPTICAL PROPERTIES OF Al-DOPED γ-Ge3N4

2012 ◽  
Vol 26 (32) ◽  
pp. 1250200 ◽  
Author(s):  
Y. C. DING ◽  
A. P. XIANG ◽  
X. H. ZHU ◽  
J. LUO ◽  
X. F. HU
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Dielectric Behavior ◽  
Generalized Gradient ◽  
Metallic Behavior ◽  
Electronic And Optical Properties ◽  
Plane Wave Method ◽  
First Principles Study ◽  
Potential Applications ◽  
P Type

First principles study of the structural, electronic and optical properties of Al -doped γ- Ge 3 N 4 with different concentration has been reported using the pseudo-potential plane wave method within the generalized gradient approximation (GGA). The binding energy and the formation energy suggest that Aluminum (Al) impurities prefer to substitute Ge at octahedral sites. Different doping concentrations are considered and the corresponding density of states (DOS) are analyzed. Calculated DOS indicates that there are holes in the top of the valance band after doping, meaning a p-type doping. We study the complex dielectric function, the absorption coefficient, and the electron energy loss spectra. It is demonstrated that for the low Al concentration, the material exhibits the dielectric behavior and for the high Al concentration, the material has possibilities to exhibit some metallic behavior. The γ- Ge 3 N 4 doped with Al has a much higher static dielectric constant than undoped γ- Ge 3 N 4, implying its potential applications in electronics and optics.

Gas molecular adsorption effects on the electronic and optical properties of monolayer SnP3

Vacuum ◽  
2019 ◽  
Vol 168 ◽  
pp. 108823 ◽  
Author(s):  
Fanfan Niu ◽  
Miao Cai ◽  
Jiu Pang ◽  
Xiaoling Li ◽  
Daoguo Yang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Adsorption ◽  
Electronic And Optical Properties ◽  
Adsorption Effects

scholarly journals An Improved Theoretical Model to Explain Electronic and Optical Properties of p-Type GaAs/AlGaAs Superlattices for Multi-Wavelength Normal Incidence P

ETRI Journal ◽  
1997 ◽  
Vol 18 (4) ◽  
pp. 315-338 ◽  
Author(s):  
Byoung-Whi Kim, Kim, ◽  
Eun-Chang Choi, Choi, ◽  
Kwon Chul Park,and Park,and ◽  
Seok-Youl Kang Kang
Keyword(s):  
Optical Properties ◽  
Theoretical Model ◽  
Normal Incidence ◽  
Electronic And Optical Properties ◽  
Multi Wavelength ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document