scholarly journals ZnO nanostructured materials for emerging solar cell applications

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 42838-42859 ◽  
Author(s):  
Arie Wibowo ◽  
Maradhana Agung Marsudi ◽  
Muhamad Ikhlasul Amal ◽  
Muhammad Bagas Ananda ◽  
Ruth Stephanie ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Solar Cell ◽  
Nanostructured Materials ◽  
Electron Mobility ◽  
Low Cost ◽  
High Conductivity ◽  
Conductivity Electron

Zinc oxide (ZnO) has been considered as one of the potential materials in solar cell applications, owing to its relatively high conductivity, electron mobility, stability against photo-corrosion and availability at low-cost.

scholarly journals A Heterojunction Based on Macro-porous Silicon and Zinc Oxide for Solar Cell Application

2015 ◽  
Vol 18 (4) ◽  
pp. 225-230 ◽  
Author(s):  
N. Mendoza-Agüero ◽  
V. Agarwal ◽  
H. I. Villafán-Vidales ◽  
J. Campos-Alvarez ◽  
P. J. Sebastian
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Solar Cell ◽  
Porous Silicon ◽  
Electrical Response ◽  
Low Cost ◽  
Photovoltaic Performance ◽  
Buffer Layers ◽  
Photovoltaic Properties ◽  
Solar Cell Application

Transparent and conductive Al doped zinc oxide (AZO) films were reactively sputtered from metallic targets onto macro-porous silicon (MPS) substrate to fabricate a heterojunction interface structure. A tungsten oxide (WO3) thin film was placed between metallic aluminum back contact and bulk silicon to extract photogenerated holes from the absorber. Due to the susceptibility of PS to naturally oxidize over the period of time, a thin film of SiO2 was thermally grown to stabilize the electrical response of the junction. Such thin layer acts as passive film to prevent recombination and is placed between the p-n junction. Photovoltaic properties of this heterojunction were studied by using the current density-voltage (J-V) measurement under AM 1.5 illumination. The experimental results show an increase in photovoltaic performance of AZO/MPS solar cell with a buffer layers of WO3. Such heterostructures are promising for the development of the low-cost, clean, and durable devices with appreciable light-to-electricity conversion efficiency.

scholarly journals Sensing Performance of Al and Sn Doped ZnO for Hydrogen Detection

Proceedings ◽  
2019 ◽  
Vol 14 (1) ◽  
pp. 39
Author(s):  
Zahira. El khalidi ◽  
Maryam Siadat ◽  
Elisabetta. Comini ◽  
Salah. Fadili ◽  
Philippe. Thevenin
Keyword(s):  
Zinc Oxide ◽  
Chemical Sensor ◽  
Low Cost ◽  
Zinc Powder ◽  
Health Condition ◽  
Vibration Modes ◽  
X Ray Diffraction ◽  
Grain Sizes ◽  
Pure Oxide ◽  
Doped Zno

Chemical gas sensors were studied long ago and nowadays, for the advantageous role they provide to the environment, health condition monitoring and protection. The recent studies focus on the semiconductors sensing abilities, especially of non toxic and low cost compounds. The present work describes the steps to elaborate and perform a chemical sensor using intrinsic and doped semiconductor zinc oxide. First, we synthesized pure oxide using zinc powder, then, two other samples were established where we introduced the same doping percentage of Al and Sn respectively. Using low cost spray pyrolysis, and respecting the same conditions of preparation. The obtained samples were then characterized by X Ray Diffraction (XRD) that revealed the hexagonal wurzite structure and higher crystallite density towards the direction (002), besides the appearance of the vibration modes related to zinc oxide, confirmed by Raman spectroscopy. SEM spectroscopy showed that the surface morphology is ideal for oxidizing/reduction reactions, due to the porous structure and the low grain sizes, especially observed for the sample Sn doped ZnO. The gas testing confirms these predictions showing that the highest response is related to Sn doped ZnO compared to ZnO and followed by Al doped ZnO. The films exhibited responses towards: CO, acetone, methanol, H2, ammonia and NO2. The concentrations were varied from 10 to 500 ppm and the working temperatures from 250 to 500°C, the optimal working temperatures were 350 and 400 °C. Sn doped ZnO showed a high response towards H2 gas target, with a sensitivity reaching 200 at 500 ppm, for 400 °C.

scholarly journals Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Hsi-Chien Liu ◽  
Gou-Jen Wang
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Low Cost ◽  
Antireflection Coating ◽  
Light Spectrum ◽  
Two Stage ◽  
Liquid Diffusion ◽  
Pyramid Structure ◽  
Short Time ◽  
Structure Array

The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.

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