scholarly journals A high-precision, template-assisted, anisotropic wet etching method for fabricating perovskite microstructure arrays

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38220-38226
Author(s):  
Xue-fang Hu ◽  
Chang-gui Lu ◽  
Quan Wang ◽  
Jing-kun Xu ◽  
Yi-ping Cui
Keyword(s):  
High Precision ◽  
Wet Etching ◽  
Micro Structure ◽  
Etching Method ◽  
Graph Design ◽  
Controllable Size ◽  
Structure Array

A template-assisted wet etching method for the preparation of perovskite micro-structure array is proposed. This method has a superiority of flexible graph design, controllable size and high precision.

scholarly journals Ni-Solder (Pb/Sn) Selective Wet-Etching Method in Acidic Solutions.

1999 ◽  
Vol 2 (1) ◽  
pp. 29-34
Author(s):  
Yukio KIZAKI ◽  
Kazuhito HIGUCHI ◽  
Soichi HONMA ◽  
Hiroshi YAMADA
Keyword(s):  
Wet Etching ◽  
Acidic Solutions ◽  
Etching Method

Low-Cost Wet-Etching Method to Fabricate a Robust THz Tri-Layer Polarizer With a High Extinction Ratio

2021 ◽  
Author(s):  
Zhe Huang ◽  
Hau Ping Chan ◽  
Emma Pickwell-MacPherson ◽  
Edward P. J. Parrott
Keyword(s):  
Low Cost ◽  
Extinction Ratio ◽  
Wet Etching ◽  
High Extinction Ratio ◽  
Etching Method

scholarly journals CCT-tunable LED device with excellent ACU by using micro-structure array film

2016 ◽  
Vol 24 (15) ◽  
pp. 16695 ◽  
Author(s):  
Qiu Chen ◽  
Zongtao Li ◽  
Kaihang Chen ◽  
Yong Tang ◽  
Xinrui Ding ◽  
...  
Keyword(s):  
Micro Structure ◽  
Structure Array

Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors

2005 ◽  
Vol 475-479 ◽  
pp. 2223-2226
Author(s):  
Zhi-gang Sun ◽  
Masaki Mizuguchi ◽  
Hiroyuki Akinaga
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Threshold Voltage ◽  
Wet Etching ◽  
Magnetic Field Sensors ◽  
Field Sensitivity ◽  
Gaas Substrates ◽  
Etching Method ◽  
Magnetic Filed ◽  
The Magnetic Field

Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 µm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.

Effect of Electrochemical Reaction Enviroment on the Surface Morphology and Photoluminescence of Porous Silicon

2013 ◽  
Vol 737 ◽  
pp. 60-66
Author(s):  
Ali Syari’ati ◽  
Veinardi Suendo
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Silicon Oxide ◽  
Quantum Confinement Effect ◽  
Etching Rate ◽  
Green Emission ◽  
Wet Etching ◽  
Electrochemical Anodization ◽  
Etching Method ◽  
Silicon Based

Porous silicon (p-Si) is a well-known silicon based material that can emit visible light at room temperature. The radiative recombination that originated from quantum confinement effect shows photoluminescence (PL) in red, while the defect on silicon oxide at the surface of p-Si shows in blue-green region. Porous silicon can be synthesized through two methods; wet-etching and electrochemical anodization using hydrofluoric acid as the main electrolyte. The electrochemical anodization is more favorable due to faster etching rate at the surface than the conventional wet-etching method. The objective of this research is to show that both of porous silicons can be synthesized using the same main electrolyte but by varying the reaction environment during anodization/etching process. Here, we shows the wet-etching method that enhanced by polarization concentration will produce porous silicon with silicon oxide defects by means blue-green emission, while direct electrochemical anodization will produce samples that emit red PL signal. The effect of introducing KOH into the electrolyte was also studied in the case of enhanced-wet-etching method. Surface morphology of porous silicon and their photoluminescence were observed by Scanning Electron Microscope and PL spectroscopy, respectively.

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