scholarly journals AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms

RSC Advances ◽  
2021 ◽  
Vol 11 (20) ◽  
pp. 12235-12248
Author(s):  
Mengmeng Miao ◽  
Ken Cadien
Keyword(s):  
Growth Rate ◽  
Reaction Mechanisms ◽  
Deposition Temperature ◽  
Dose Time ◽  
Plasma Reaction ◽  
Plasma Effect

Plasma effect on PEALD AIN growth rate follows a similar trend but shifts to longer plasma dose time when deposition temperature decreases.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Scanning Scratch Tests for Evaluating the Adhesion of Thin Oxide Films on Stainless Steel

1994 ◽  
Vol 356 ◽  
Author(s):  
V. A. C. Haanappel ◽  
H. D. van Corbach ◽  
T. Fransen ◽  
P. J. Gellings
Keyword(s):  
Mechanical Properties ◽  
Growth Rate ◽  
Stainless Steel ◽  
Film Thickness ◽  
Critical Load ◽  
Deposition Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Thin Oxide Films ◽  
Type Aisi

AbstractAmorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low pressure (0.17 kPa (1.25 torr)).The effect of deposition temperature (200 − 380 °C), growth rate, film thickness, and post-deposition thermal treatment on the mechanical properties was studied. The experiments were performed with a scanning-scratch tester. The experiments are based on the estimation of the film adhesion to the substrate by determining a critical load, Lc: the load where the film starts to spall or to delaminate.The best mechanical properties were obtained with unannealed samples. After thermal annealing the critical load decreases. Regarding the unannealed samples, the critical load increased with increasing film thickness. The deposition temperature and the growth rate had no effect on the critical load.

The Effect of Deposition Temperature on the Microstructure of Lpcvd Polysilicon Films

1991 ◽  
Vol 239 ◽  
Author(s):  
J. Hangas ◽  
D. R. Liu ◽  
D. G. Oei ◽  
S. L. McCarthy ◽  
C. Peters
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Deposition Temperature ◽  
Hexagonal Phase ◽  
Stacking Faults ◽  
Lattice Parameter ◽  
Dislocation Motion ◽  
Narrow Region ◽  
Thin Oxide Film ◽  
Polysilicon Films

ABSTRACTThe microstructure, of unannealed and annealed polysilicon films was studied using TEM and XRD. The LPCVD films were grown at 600°C and 620°C with 320 mTorr of silane, and at 580°C with 220 mTorr of silane. The substrates were [001] Si with a thin oxide film. The stress state of the films changed from compressive at 580°C and 620°C, to tensile in a narrow region around 600°C. The same materials were annealed at 1100°C. The unannealed films vary from partially amorphous at 580°C, where the slowest growth rate was observed, to randomly oriented and equiaxed at 600°C, to columnar and highly oriented at 620°C. The grains in the 620°C material have a high stacking fault and polytype density, and it was proposed that these occurred on growth, and not from dislocation motion. The grain size increased from 40–250run to 100–300 nm in the 600°C samples when annealed at 1100°C, and the density of twins and stacking faults was reduced. The hexagonal phase was observed only in unannealed materials in SAED and as broad “wings” at the base of the llld.c (diamond cubic) peak in XRD. Within the limits of SAED, no change in lattice parameter of the hexagonal phase was observed.

Evaluation of Pb Precursors for Liquid Injection Atomic Layer Deposition of Pb(ZrxTi1-x)O3 Thin Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Takayuki Watanabe ◽  
Susanne Hoffmann-Eifert ◽  
Cheol Seong Hwang ◽  
Rainer Waser
Keyword(s):  
Growth Rate ◽  
Thermal Decomposition ◽  
Atomic Layer Deposition ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Decomposition Temperature ◽  
Thermal Decomposition Temperature ◽  
Layer Deposition ◽  
Liquid Injection

AbstractPb(DPM)2 and Pb(TMOD)2 dissolved in ethylcyclohexane were evaluated as precursors for future atomic layer deposition (ALD) of Pb(Zr,Ti)O3 films. PbO films were deposited by a liquid injection atomic layer deposition on Pt-covered Si substrates at different deposition temperature and precursor volume per cycle. Pb(DPM)2 and Pb(TMOD)2 started thermal decomposition at deposition temperature of around 270°C and 320°C, respectively. Against increasing Pb(DPM)2 injection at 240°C, the deposition rate of PbO films saturated at around 1 Å/cycle, but kept increasing at 300°C, which is above the thermal decomposition temperature. The deposition rate of PbO films at 240°C dropped to a constant value with enough purge time after precursor injection and reactant supply. A saturated deposition rate of PbO films was also observed for Pb(TMOD)2 below the thermal decomposition temperature. However, the saturation behavior observed for Pb(TMOD)2 was slower and the saturated growth rate was higher comparing to Pb(DPM)2. In addition, the film thickness of the PbO films had an apparent gradient over the substrates. These results indicate that Pb(DPM)2 shows more reactive and stable chemisorption comparing to Pb(TMOD)2 for the self-limiting growth rate.

Localized Epitaxy of GaN by HVPE on patterned Substrates

1998 ◽  
Vol 3 ◽  
Author(s):  
O. Parillaud ◽  
V. Wagner ◽  
H. J. Buehlmann ◽  
Marc ILEGEMS
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Deposition Temperature ◽  
Hydride Vapor Phase Epitaxy ◽  
Mask Pattern ◽  
Experimental Conditions ◽  
Horizontal Reactor ◽  
Image Position ◽  
Shaped Pattern

We report ongoing experiments on the growth of GaN by hydride vapor phase epitaxy (HVPE), using a newly designed Aixtron horizontal reactor. Growth was carried out on c-plane Al2O3 substrates on which a thin GaN layer had been predeposited by MOVPE and patterned using a dielectric mask. The mask pattern was designed to give information on the growth rate and morphology along different directions, and contained both a star-shaped pattern and arrays of parallel stripes of various widths and orientations. All growths were performed at atmospheric pressure and ~1050°C deposition temperature. For the range of experimental conditions investigated the maximum ratios of lateral to vertical growth velocities of around 2 and coalescence of the layer after approximately 10 μm of growth were observed for stripes oriented along the <100> direction.

Growth of Epitaxial Layers of GexSi1−x BY UHV/CVD

1990 ◽  
Vol 198 ◽  
Author(s):  
Marco Racanelli ◽  
David W. Greve
Keyword(s):  
Growth Rate ◽  
Deposition Temperature ◽  
Defect Density ◽  
Epitaxial Films ◽  
Epitaxial Layers ◽  
Silicon Substrates ◽  
Germanium Content ◽  
Film Roughness

ABSTRACTUndoped epitaxial layers of GexSi1−x have been grown on (100) silicon substrates using the UHV/CVD technique. Epitaxial films were obtained at growth temperatures between 577 and 665 C. The growth rate and germanium content of the layers has been determined as a function of the germane flow and the deposition temperature. A bake at 800 C was found to be highly beneficial in reducing the defect density and improving the film roughness.

scholarly journals Investigation of Morphology of Aluminum Co-Doped Scandium Stabilized Zirconia (ScAlSZ) Thin Films

Coatings ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 31
Author(s):  
Arvaidas Galdikas ◽  
Mantas Sriubas ◽  
Gediminas Kairaitis ◽  
Darius Virbukas ◽  
Kristina Bockute ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Roughness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Film Surface ◽  
Lateral Size ◽  
Stabilized Zirconia ◽  
Co Doped

The morphology of aluminum co-doped scandium stabilized zirconia (ScAlSZ) thin films formed by e-beam deposition system was investigated experimentally and theoretically. The dependencies of surface roughness, and the films’ structure on deposition temperature and deposition rate were analyzed. It was shown experimentally that the dependence of the surface roughness on deposition temperature and deposition rate was not monotonic. Those dependencies were analyzed by mathematical modeling. The mathematical model includes the processes of phase separation, adsorption and diffusion process due to the film surface curvature. The impacts of substrate temperature, growth rate on surface roughness of thin films and lateral nanoparticle sizes are shown by the modeling results. Modeling showed that the roughness of the surface of grown films became higher in most cases as the substrate’s temperature rose, but the higher deposition rate resulted in lower surface roughness in most cases. The results obtained by simulations were compared to the relevant experimental data. The non-linear relationships between surface roughness of grown films and lateral size of nanoparticles were also shown by our modeling results, which suggested that the variation in the surface roughness depending on the substrate temperature and growth rate was related to the lateral size of nanoparticles.

Influence of Deposition Temperature on Composition and Growth Rate of GaAsx P1−x Layers

1972 ◽  
Vol 43 (5) ◽  
pp. 2471-2472 ◽  
Author(s):  
V. S. Ban ◽  
H. F. Gossenberger ◽  
J. J. Tietjen
Keyword(s):  
Growth Rate ◽  
Deposition Temperature

Comparison of Growth and Microstructure of Copper Films Deposited From Different Cu(Ii) Precursors

1994 ◽  
Vol 337 ◽  
Author(s):  
J. Goswami ◽  
S.A. Shivashankar ◽  
Lakshmi Raghunathan ◽  
Anjana Devi ◽  
K.V. Ramanathan
Keyword(s):  
Thermal Stability ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Copper Films ◽  
High Quality ◽  
Thermally Activated ◽  
Thermal Stability Of ◽  
Lower Resistivity

ABSTRACTHigh quality copper thin films have been obtained by low pressure thermally-activated chemical vapour deposition from two different Cu(II) metalorganic precursors, (a) bis(dipivaloyl-methanato) Cu (II) or Cu(dpm)2 and (b) bis(t-butylaceto acetato)Cu(II) or Cu(tbaoac)2, the latter synthesised with a view to reducing the deposition temperature. A comparative study of the volatility and thermal stability of the two precursors, as well as of the growth and microstructure of copper films from these two precursors, is presented.While the threshold deposition temperature is significantly lower for Cu(tbaoac)2 compared to Cu(dpm)2, the growth rate is considerably higher with Cu(dpm)2-Films obtained from Cu(tbaoac)2 are denser and of lower resistivity at a given thickness compared to those from Cu(dpm)2, and are also smoother, exhibiting mirror-like reflectivity.

Sign in / Sign up

Export Citation Format

Share Document